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Results: 1-11 |
Results: 11
CAPILLARY PRECONDITIONING FOR ANALYSIS OF ANIONS USING INDIRECT UV DETECTION IN CAPILLARY-ZONE-ELECTROPHORESIS - SYSTEMATIC INVESTIGATION OF ALKALINE AND ACID PRERINSING TECHNIQUES BY DESIGNED EXPERIMENTS
Authors: EHMANN T BACHMANN K FABRY L RUFER H SERWE M ROSS G PAHLKE S KOTZ L
Citation: T. Ehmann et al., CAPILLARY PRECONDITIONING FOR ANALYSIS OF ANIONS USING INDIRECT UV DETECTION IN CAPILLARY-ZONE-ELECTROPHORESIS - SYSTEMATIC INVESTIGATION OF ALKALINE AND ACID PRERINSING TECHNIQUES BY DESIGNED EXPERIMENTS, Journal of chromatography, 816(2), 1998, pp. 261-275
TOTAL-REFLECTION X-RAY-FLUORESCENCE ANALYSIS OF LIGHT-ELEMENTS WITH SYNCHROTRON-RADIATION AND SPECIAL X-RAY TUBES
Authors: STRELI C WOBRAUSCHEK P BAUER V KREGSAMER P GORGL R PIANETTA P RYON R PAHLKE S FABRY L
Citation: C. Streli et al., TOTAL-REFLECTION X-RAY-FLUORESCENCE ANALYSIS OF LIGHT-ELEMENTS WITH SYNCHROTRON-RADIATION AND SPECIAL X-RAY TUBES, Spectrochimica acta, Part B: Atomic spectroscopy, 52(7), 1997, pp. 861-872
ANALYSIS OF NI ON SI-WAFER SURFACES USING SYNCHROTRON-RADIATION EXCITED TOTAL-REFLECTION X-RAY-FLUORESCENCE ANALYSIS
Authors: WOBRAUSCHEK P GORGL R KREGSAMER P STRELI C PAHLKE S FABRY L HALLER M KNOCHEL A RADTKE M
Citation: P. Wobrauschek et al., ANALYSIS OF NI ON SI-WAFER SURFACES USING SYNCHROTRON-RADIATION EXCITED TOTAL-REFLECTION X-RAY-FLUORESCENCE ANALYSIS, Spectrochimica acta, Part B: Atomic spectroscopy, 52(7), 1997, pp. 901-906
MEASUREMENT OF SHALLOW ARSENIC IMPURITY PROFILES IN SEMICONDUCTOR SILICON USING TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROMETRY AND TOTAL-REFLECTION X-RAY-FLUORESCENCE SPECTROMETRY
Authors: SCHWENKE H KNOTH J FABRY L PAHLKE S SCHOLZ R FREY L
Citation: H. Schwenke et al., MEASUREMENT OF SHALLOW ARSENIC IMPURITY PROFILES IN SEMICONDUCTOR SILICON USING TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROMETRY AND TOTAL-REFLECTION X-RAY-FLUORESCENCE SPECTROMETRY, Journal of the Electrochemical Society, 144(11), 1997, pp. 3979-3983
OPTIMIZATION OF THE ELECTROKINETIC SAMPLE INTRODUCTION IN CAPILLARY ELECTROPHORESIS FOR THE ULTRA-TRACE DETERMINATION OF ANIONS ON SILICON-WAFER SURFACES
Authors: EKMANN T BACHMANN K FABRY L RUFER H PAHLKE S KOTZ L
Citation: T. Ekmann et al., OPTIMIZATION OF THE ELECTROKINETIC SAMPLE INTRODUCTION IN CAPILLARY ELECTROPHORESIS FOR THE ULTRA-TRACE DETERMINATION OF ANIONS ON SILICON-WAFER SURFACES, Chromatographia, 45, 1997, pp. 301-311
ACCURATE CALIBRATION OF TXRF USING MICRODROPLET SAMPLES
Authors: FABRY L PAHLKE S KOTZ L
Citation: L. Fabry et al., ACCURATE CALIBRATION OF TXRF USING MICRODROPLET SAMPLES, Fresenius' journal of analytical chemistry, 354(3), 1996, pp. 266-270
DIAGNOSTIC AND MONITORING TOOLS OF LARGE-SCALE SI-MANUFACTURING - TRACE-ANALYTICAL TOOLS AND TECHNIQUES IN SI-WAFER MANUFACTURING
Authors: FABRY L KOSTER L PAHLKE S KOTZ L HAGE J
Citation: L. Fabry et al., DIAGNOSTIC AND MONITORING TOOLS OF LARGE-SCALE SI-MANUFACTURING - TRACE-ANALYTICAL TOOLS AND TECHNIQUES IN SI-WAFER MANUFACTURING, IEEE transactions on semiconductor manufacturing, 9(3), 1996, pp. 428-436
APPLICATION OF CAPILLARY ZONE ELECTROPHORESIS WITH AN ISOTACHOPHORETIC INITIAL-STATE TO DETERMINE ANIONIC IMPURITIES ON AS-POLISHED SILICON-WAFER SURFACES
Authors: BODEN J BACHMANN K KOTZ L FABRY L PAHLKE S
Citation: J. Boden et al., APPLICATION OF CAPILLARY ZONE ELECTROPHORESIS WITH AN ISOTACHOPHORETIC INITIAL-STATE TO DETERMINE ANIONIC IMPURITIES ON AS-POLISHED SILICON-WAFER SURFACES, Journal of chromatography, 696(2), 1995, pp. 321-332
TXRF WITH SYNCHROTRON-RADIATION ANALYSIS OF NI ON SI-WAFER SURFACES
Authors: WOBRAUSCHEK P KREGSAMER P LADISICH W STRELI C PAHLKE S FABRY L GARBE S HALLER M KNOCHEL A RADTKE M
Citation: P. Wobrauschek et al., TXRF WITH SYNCHROTRON-RADIATION ANALYSIS OF NI ON SI-WAFER SURFACES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 363(3), 1995, pp. 619-620
RADIOFREQUENCY SPARK SOURCE-MASS SPECTROMETRIC ANALYSIS OF OXYGEN IN UNDOPED SILICON-CRYSTALS AND OF CARBON IN UNDOPED AND CARBON-DOPED GALLIUM-ARSENIDE CRYSTALS
Authors: WIEDEMANN B BETHGE K SCHUTZE W LAMBERT U PAHLKE S REINHOLD T WEINERT B FLADE T
Citation: B. Wiedemann et al., RADIOFREQUENCY SPARK SOURCE-MASS SPECTROMETRIC ANALYSIS OF OXYGEN IN UNDOPED SILICON-CRYSTALS AND OF CARBON IN UNDOPED AND CARBON-DOPED GALLIUM-ARSENIDE CRYSTALS, Fresenius' journal of analytical chemistry, 350(4-5), 1994, pp. 319-322
TRACE-ANALYTICAL METHODS FOR MONITORING CONTAMINATIONS IN SEMICONDUCTOR-GRADE SI MANUFACTURING
Authors: FABRY L PAHLKE S KOTZ L TOLG G
Citation: L. Fabry et al., TRACE-ANALYTICAL METHODS FOR MONITORING CONTAMINATIONS IN SEMICONDUCTOR-GRADE SI MANUFACTURING, Fresenius' journal of analytical chemistry, 349(4), 1994, pp. 260-271
Risultati: 1-11 |