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Results:
1-14
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Results: 14
Authors:
GANETSOS T
TSAMAKIS D
PANKNIN D
MAIR GLR
TEICHERT J
BISCHOFF L
AIDINIS C
Citation: T. Ganetsos et al., SI1-XGEX STRUCTURES FABRICATED BY FOCUSED ION-BEAM IMPLANTATION, Journal de physique. IV, 8(P3), 1998, pp. 109-112
Authors:
BARRADAS NP
PANKNIN D
WIESER E
SCHMIDT B
BETZL M
MUCKLICH A
SKORUPA W
Citation: Np. Barradas et al., INFLUENCE OF THE ION IRRADIATION ON THE PROPERTIES OF BETA-FESI2 LAYERS PREPARED BY ION-BEAM-ASSISTED DEPOSITION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 316-320
Authors:
WIESER E
PANKNIN D
BARRADAS NP
BETZL M
REUTHER H
HENRION W
LANGE H
Citation: E. Wieser et al., FORMATION OF TERNARY (FE1-XCOX)SI-2 STRUCTURES BY ION-BEAM-ASSISTED DEPOSITION AND ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 124(4), 1997, pp. 533-541
Authors:
TEICHERT J
BISCHOFF L
HESSE E
SCHNEIDER P
PANKNIN D
GESSNER T
LOBNER B
ZICHNER N
Citation: J. Teichert et al., COBALT DISILICIDE INTERCONNECTS FOR MICROMECHANICAL DEVICES, Journal of micromechanics and microengineering, 6(2), 1996, pp. 272-278
Authors:
PANKNIN D
WIESER E
SKORUPA W
HENRION W
LANGE H
Citation: D. Panknin et al., BURIED (FE1-XCOX)SI-2 LAYERS WITH VARIABLE BAND-GAP FORMED BY ION BEAM SYNTHESIS, Applied physics A: Materials science & processing, 62(2), 1996, pp. 155-162
Authors:
TEICHERT J
BISCHOFF L
HESSE E
SCHNEIDER P
PANKNIN D
GESSNER T
LOBNER B
ZICHNER N
Citation: J. Teichert et al., COMPARISON OF COSI2 INTERCONNECTION LINES ON CRYSTALLINE AND NONCRYSTALLINE SILICON FABRICATED BY WRITING FOCUSED ION-BEAM IMPLANTATION, Applied surface science, 91(1-4), 1995, pp. 44-49
Authors:
TEICHERT S
KILPER R
FRANKE T
ERBEN J
HAUSSLER P
HENRION W
LANGE H
PANKNIN D
Citation: S. Teichert et al., ELECTRICAL AND OPTICAL-PROPERTIES OF THIN FE1-XCOXSI2 FILMS, Applied surface science, 91(1-4), 1995, pp. 56-62
Authors:
HATZOPOULOS N
PANKNIN D
FUKAREK W
SKORUPA W
SIAPKAS DI
HEMMENT PLF
Citation: N. Hatzopoulos et al., ELECTRICAL AND OPTICAL CHARACTERIZATION OF DOUBLE SIMOX STRUCTURES FORMED BY SEQUENTIAL HIGH-ENERGY OXYGEN IMPLANTATION INTO SILICON, Microelectronic engineering, 28(1-4), 1995, pp. 415-418
Authors:
KATSIDIS CC
SIAPKAS DI
PANKNIN D
HATZOPOULOS N
SKORUPA W
Citation: Cc. Katsidis et al., OPTICAL CHARACTERIZATION OF DOPED SIMOX STRUCTURES USING FTIR SPECTROSCOPY, Microelectronic engineering, 28(1-4), 1995, pp. 439-442
Authors:
BISCHOFF L
TEICHERT J
HESSE E
PANKNIN D
SKORUPA W
Citation: L. Bischoff et al., COSI2 MICROSTRUCTURES BY MEANS OF A HIGH-CURRENT FOCUSED ION-BEAM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3523-3527
Authors:
KOGLER R
VONBORANY J
PANKNIN D
SKORUPA W
Citation: R. Kogler et al., ELECTRICAL EFFECTS OF RESIDUAL DEFECTS IN SI AFTER HIGH-ENERGY IMPLANTATION OF GE+ IONS AND ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 350-353
Authors:
PANKNIN D
EICHORN F
WIESER E
SKORUPA W
HENRION W
ALBRECHT J
Citation: D. Panknin et al., ELECTRICAL AND OPTICAL-PROPERTIES OF BETA-FESI2 AFTER CO IMPLANTATIONAND ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 172-175
Authors:
BISCHOFF L
HESSE E
PANKNIN D
SKORUPA W
TEICHERT J
Citation: L. Bischoff et al., WRITING IMPLANTATION WITH A HIGH-CURRENT DENSITY FOCUSED ION-BEAM, Microelectronic engineering, 23(1-4), 1994, pp. 115-118
Authors:
WIESER E
PANKNIN D
SKORUPA W
QUERNER G
HENRION W
ALBRECHT J
Citation: E. Wieser et al., ION-BEAM SYNTHESIS OF TERNARY (FE1-XCOX)SI2, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 867-871
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1-14
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