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Results: 26-43/43

Authors: TANG YS TORRES CMS DIETRICH B KISSINGER W WHALL TE PARKER EHC
Citation: Ys. Tang et al., RAMAN-SPECTROSCOPY OF DRY-ETCHED SI-SI1-XGEX QUANTUM DOTS, Solid state communications, 94(5), 1995, pp. 369-372

Authors: KASPER E PARKER EHC
Citation: E. Kasper et Ehc. Parker, SILICON MOLECULAR-BEAM EPITAXY 1995 - PROCEEDINGS OF SYMPOSIUM L ON SILICON MOLECULAR-BEAM EPITAXY OF THE 1995 E-MRS-SPRING-CONFERENCE, STRASBOURG, FRANCE, MAY 22-26, 1995 - PREFACE, Journal of crystal growth, 157(1-4), 1995, pp. 9-9

Authors: BASARAN E PARRY CP KUBIAK RA WHALL TE PARKER EHC
Citation: E. Basaran et al., ELECTROCHEMICAL CAPACITANCE-VOLTAGE DEPTH PROFILING OF HEAVILY BORON-DOPED SILICON, Journal of crystal growth, 157(1-4), 1995, pp. 109-112

Authors: TANG YS TORRES CMS DIETRICH B KISSINGER W WHALL TE PARKER EHC
Citation: Ys. Tang et al., PHOTOLUMINESCENCE AND RAMAN-SPECTROSCOPY OF SI SI1-XGEX QUANTUM DOTS/, Journal of crystal growth, 157(1-4), 1995, pp. 280-284

Authors: MIRONOV OA KHIZHNY VI BRAITHWAITE G PARKER EHC PHILLIPS PJ WHALL TE GNEZDILOV VP
Citation: Oa. Mironov et al., OBSERVATION OF PIEZOELECTRIC-LIKE BEHAVIOR IN COHERENTLY STRAINED B-DOPED(100)SIGE SI HETEROSTRUCTURES/, Journal of crystal growth, 157(1-4), 1995, pp. 382-385

Authors: KING PJC BREESE MBH SMULDERS PJM WILKINSON AJ BOOKER GR PARKER EHC GRIME GW
Citation: Pjc. King et al., EVIDENCE FROM ION CHANNELING IMAGES FOR THE ELASTIC RELAXATION OF A SI0.85GE0.15 LAYER GROWN ON A PATTERNED SI SUBSTRATE, Applied physics letters, 67(24), 1995, pp. 3566-3568

Authors: TANG YS WILKINSON CDW SMITH DW WHALL TE PARKER EHC
Citation: Ys. Tang et al., OPTICAL-PROPERTIES OF DRY-ETCHED SI SI1-XGEX HETEROSTRUCTURE WIRES/, JPN J A P 1, 33(4B), 1994, pp. 2348-2352

Authors: BRIGHTEN JC HAWKINS ID PEAKER AR KUBIAK RA PARKER EHC WHALL TE
Citation: Jc. Brighten et al., CHARACTERIZATION OF SI SI1-XGEX/SI HETEROSTRUCTURES BY CAPACITANCE-TRANSIENT SPECTROSCOPY/, Journal of applied physics, 76(7), 1994, pp. 4237-4243

Authors: WHALL TE PEWS AD MATTEY NL PARKER EHC
Citation: Te. Whall et al., HOLE EFFECTIVE-MASS IN REMOTE DOPED SI SI(1-X)G(X) QUANTUM-WELLS WITHLESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.3/, Applied physics letters, 65(26), 1994, pp. 3362-3364

Authors: BASARAN E KUBIAK RA WHALL TE PARKER EHC
Citation: E. Basaran et al., VERY HIGH 2-DIMENSIONAL HOLE GAS MOBILITIES IN STRAINED SILICON-GERMANIUM, Applied physics letters, 64(25), 1994, pp. 3470-3472

Authors: TANG YS TORRES CMS WILKINSON CDW SMITH DW WHALL TE PARKER EHC
Citation: Ys. Tang et al., PHOTOLUMINESCENCE FROM SI SI0.87GE0.13 MULTIPLE-QUANTUM-WELL WIRES/, Journal de physique. IV, 3(C5), 1993, pp. 119-122

Authors: BRIGHTEN JC HAWKINS ID PEAKER AR KUBIAK RA PARKER EHC WHALL TE
Citation: Jc. Brighten et al., THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES AND INTERFACE CHARGE-DENSITIES IN SI SI1-YGEY/SI HETEROJUNCTIONS/, Semiconductor science and technology, 8(7), 1993, pp. 1487-1489

Authors: WHALL TE SMITH DW PLEWS AD KUBIAK RA PHILLIPS PJ PARKER EHC
Citation: Te. Whall et al., HIGH HOLE MOBILITIES IN A P-TYPE MODULATION-DOPED SI SI0.87GE0.13/SI HETEROSTRUCTURE/, Semiconductor science and technology, 8(4), 1993, pp. 615-616

Authors: EMELEUS CJ WHALL TE SMITH DW MATTEY NL KUBIAK RA PARKER EHC KEARNEY MJ
Citation: Cj. Emeleus et al., OBSERVATION OF NOVEL TRANSPORT PHENOMENA IN A SI0.8GE0.2 2-DIMENSIONAL HOLE GAS, Physical review. B, Condensed matter, 47(15), 1993, pp. 10016-10019

Authors: BRIGHTEN JC HAWKINS ID PEAKER AR PARKER EHC WHALL TE
Citation: Jc. Brighten et al., THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES IN SI SI1-XGEX/SI HETEROJUNCTIONS BY CAPACITANCE-VOLTAGE TECHNIQUES/, Journal of applied physics, 74(3), 1993, pp. 1894-1899

Authors: EMELEUS CJ WHALL TE SMITH DW KUBIAK RA PARKER EHC KEARNEY MJ
Citation: Cj. Emeleus et al., SCATTERING MECHANISMS AFFECTING HOLE TRANSPORT IN REMOTE-DOPED SI SIGE HETEROSTRUCTURES/, Journal of applied physics, 73(8), 1993, pp. 3852-3856

Authors: TANG YS WILKINSON CDW TORRES CMS SMITH DW WHALL TE PARKER EHC
Citation: Ys. Tang et al., OPTICAL-PROPERTIES OF SI SI0.87GE0.13 MULTIPLE-QUANTUM-WELL WIRES/, Applied physics letters, 63(4), 1993, pp. 497-499

Authors: BASARAN E KUBIAK RA PARRY CP NEWSTEAD SM PARKER EHC WHALL TE
Citation: E. Basaran et al., GERMANIUM CONCENTRATION PROFILING OF SI GEXSI1-X HETEROSTRUCTURES BY ANODIC-DISSOLUTION/, Semiconductor science and technology, 6(12), 1991, pp. 1175-1177
Risultati: 1-25 | 26-43 |