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Results:
1-11
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Results: 11
Authors:
BELK JG
PASHLEY DW
MCCONVILLE CF
JOYCE BA
JONES TS
Citation: Jg. Belk et al., SURFACE-MORPHOLOGY DURING STRAIN RELAXATION IN THE GROWTH OF INAS ON GAAS(110), Surface science, 410(1), 1998, pp. 82-98
Authors:
BELK JG
SUDIJONO JL
YAMAGUCHI H
ZHANG XM
PASHLEY DW
MCCONVILLE CF
JONES TS
JOYCE BA
Citation: Jg. Belk et al., SCANNING-TUNNELING-MICROSCOPY STUDIES OF STRAIN RELAXATION AND MISFITDISLOCATIONS IN INAS LAYERS GROWN ON GAAS(110) AND GAAS(111)A, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 915-918
Authors:
BELK JG
PASHLEY DW
MCCONVILLE CF
SUDIJONO JL
JOYCE BA
JONES TS
Citation: Jg. Belk et al., SURFACE ATOMIC CONFIGURATIONS DUE TO DISLOCATION ACTIVITY IN INAS GAAS(110) HETEROEPITAXY/, Physical review. B, Condensed matter, 56(16), 1997, pp. 10289-10296
Authors:
YAMAGUCHI H
BELK JG
ZHANG XM
SUDIJONO JL
FAHY MR
JONES TS
PASHLEY DW
Citation: H. Yamaguchi et al., ATOMIC-SCALE IMAGING OF STRAIN RELAXATION VIA MISFIT DISLOCATIONS IN HIGHLY MISMATCHED SEMICONDUCTOR HETEROEPITAXY - INAS GAAS(111)A/, Physical review. B, Condensed matter, 55(3), 1997, pp. 1337-1340
Authors:
BROOKS G
RUEGGEBERG FA
DICKINSON GL
HAMILTON EH
PASHLEY DW
RUSSELL CM
SCHUSTER GS
Citation: G. Brooks et al., EFFECT OF ADHESIVE APPLICATION AND WATER STORAGE ON CERAMIC BRACKET BONDING, Journal of dental research, 76, 1997, pp. 1467-1467
Authors:
ZHANG X
PASHLEY DW
Citation: X. Zhang et Dw. Pashley, A COMPARISON OF STRAIN RELIEF BEHAVIOR OF INXGA1-XAS ALLOY ON GAAS(001) AND GAAS(110) SUBSTRATES, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 361-367
Authors:
ZHANG XM
PASHLEY DW
KAMIYA I
NEAVE JH
JOYCE BA
Citation: Xm. Zhang et al., THE NUCLEATION AND GROWTH BY MOLECULAR-BEAM EPITAXY OF INAS ON GAAS(110) MISORIENTED SUBSTRATES, Journal of crystal growth, 147(1-2), 1995, pp. 234-237
Authors:
ZHANG X
PASHLEY DW
NEAVE JH
HART L
JOYCE BA
Citation: X. Zhang et al., THE STRAIN RELAXATION OF IN0.1GA0.9AS ON GAAS(110) GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 78(11), 1995, pp. 6454-6457
Authors:
PASHLEY DW
Citation: Dw. Pashley, THE RELIEF OF PSEUDOMORPHIC STRAIN IN EPILAYERS OF FCC STRUCTURES GROWN IN (110) ORIENTATION, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 67(6), 1993, pp. 1333-1346
Authors:
ZHANG X
PASHLEY DW
NEAVE JH
FAWCETT PN
ZHANG J
JOYCE BA
Citation: X. Zhang et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF GROWTH OF INAS ON GAAS(110) BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 132(1-2), 1993, pp. 331-334
Authors:
ZHANG X
PASHLEY DW
HART L
NEAVE JH
FAWCETT PN
JOYCE BA
Citation: X. Zhang et al., THE MORPHOLOGY AND ASYMMETRIC STRAIN RELIEF BEHAVIOR OF INAS FILMS ONGAAS (110) GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 131(3-4), 1993, pp. 300-308
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