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Results: 1-20 |
Results: 20
LOW-DAMAGE DRY-ETCHED GRATING ON AN MQW ACTIVE LAYER AND DISLOCATION-FREE INP REGROWTH FOR 1.55-MU-M COMPLEX-COUPLED DFB LASERS FABRICATION
Authors: TALNEAU A BOUADMA N LEBELLEGO Y SLEMPKES S OUGAZZADEN A PATRIARCHE G SERMAGE B
Citation: A. Talneau et al., LOW-DAMAGE DRY-ETCHED GRATING ON AN MQW ACTIVE LAYER AND DISLOCATION-FREE INP REGROWTH FOR 1.55-MU-M COMPLEX-COUPLED DFB LASERS FABRICATION, IEEE photonics technology letters, 10(8), 1998, pp. 1070-1072
OPTICAL STUDIES OF ULTRASHORT-PERIOD GAAS ALAS SUPERLATTICES GROWN ON(IN,GA)AS PSEUDOSUBSTRATE/
Authors: REZKI M VASSON AM VASSON A LEFEBVRE P CALVO V PLANEL R PATRIARCHE G
Citation: M. Rezki et al., OPTICAL STUDIES OF ULTRASHORT-PERIOD GAAS ALAS SUPERLATTICES GROWN ON(IN,GA)AS PSEUDOSUBSTRATE/, Physical review. B, Condensed matter, 58(12), 1998, pp. 7540-7543
BASE METALLIZATION STABILITY IN INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND ITS INFLUENCE ON LEAKAGE CURRENTS/
Authors: CAFFIN D BESOMBES C BRESSE JF LEGAY P LEROUX G PATRIARCHE G LAUNAY P
Citation: D. Caffin et al., BASE METALLIZATION STABILITY IN INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND ITS INFLUENCE ON LEAKAGE CURRENTS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 854-861
TRANSMISSION ELECTRON-MICROSCOPE OBSERVATIONS OF DISLOCATIONS IN HETEROEPITAXIAL LAYERS OF CDTE-(CDHG)TE ON GAAS
Authors: PATRIARCHE G GIRARDFRANCOIS A RIVIERE JP CASTAING J
Citation: G. Patriarche et al., TRANSMISSION ELECTRON-MICROSCOPE OBSERVATIONS OF DISLOCATIONS IN HETEROEPITAXIAL LAYERS OF CDTE-(CDHG)TE ON GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 45(1-3), 1997, pp. 76-84
ANISOTROPIC ETCHING OF INP WITH LOW SIDEWALL AND SURFACE-INDUCED DAMAGE IN INDUCTIVELY-COUPLED PLASMA-ETCHING USING SICL4
Authors: ETRILLARD J OSSART P PATRIARCHE G JUHEL M BRESSE JF DAGUET C
Citation: J. Etrillard et al., ANISOTROPIC ETCHING OF INP WITH LOW SIDEWALL AND SURFACE-INDUCED DAMAGE IN INDUCTIVELY-COUPLED PLASMA-ETCHING USING SICL4, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 626-632
CONTROLLED STEAM OXIDATION OF ALINAS FOR MICROELECTRONICS AND OPTOELECTRONICS APPLICATIONS
Authors: PETIT P LEGAY P LEROUX G PATRIARCHE G POST G QUILLEC M
Citation: P. Petit et al., CONTROLLED STEAM OXIDATION OF ALINAS FOR MICROELECTRONICS AND OPTOELECTRONICS APPLICATIONS, Journal of electronic materials, 26(12), 1997, pp. 32-35
MATERIAL FLOW AT THE SURFACE OF INDENTED INDIUM-PHOSPHIDE
Authors: LEBOURHIS E PATRIARCHE G RIVIERE JP ZOZIME A
Citation: E. Lebourhis et al., MATERIAL FLOW AT THE SURFACE OF INDENTED INDIUM-PHOSPHIDE, Physica status solidi. a, Applied research, 161(2), 1997, pp. 415-427
STUDY OF GROWTH-RATE AND COMPOSITION VARIATIONS IN METALORGANIC VAPOR-PHASE SELECTIVE-AREA EPITAXY AT ATMOSPHERIC-PRESSURE AND APPLICATION TO THE GROWTH OF STRAINED-LAYER DBR LASERS
Authors: SILVESTRE L OUGAZZADEN A DELPRAT D RAMDANE A DAGUET C PATRIARCHE G
Citation: L. Silvestre et al., STUDY OF GROWTH-RATE AND COMPOSITION VARIATIONS IN METALORGANIC VAPOR-PHASE SELECTIVE-AREA EPITAXY AT ATMOSPHERIC-PRESSURE AND APPLICATION TO THE GROWTH OF STRAINED-LAYER DBR LASERS, Journal of crystal growth, 170(1-4), 1997, pp. 639-644
STRUCTURE OF THE GAAS INP INTERFACE OBTAINED BY DIRECT WAFER BONDING OPTIMIZED FOR SURFACE-EMITTING OPTICAL-DEVICES/
Authors: PATRIARCHE G JEANNES F OUDAR JL GLAS F
Citation: G. Patriarche et al., STRUCTURE OF THE GAAS INP INTERFACE OBTAINED BY DIRECT WAFER BONDING OPTIMIZED FOR SURFACE-EMITTING OPTICAL-DEVICES/, Journal of applied physics, 82(10), 1997, pp. 4892-4903
METAL-ORGANIC VAPOR-PHASE EPITAXY GROWTH OF GAASN ON GAAS USING DIMETHYLHYDRAZINE AND TERTIARYBUTYLARSINE
Authors: OUGAZZADEN A LEBELLEGO Y RAO EVK JUHEL M LEPRINCE L PATRIARCHE G
Citation: A. Ougazzaden et al., METAL-ORGANIC VAPOR-PHASE EPITAXY GROWTH OF GAASN ON GAAS USING DIMETHYLHYDRAZINE AND TERTIARYBUTYLARSINE, Applied physics letters, 70(21), 1997, pp. 2861-2863
1.3 MU-M STRAIN-COMPENSATED INASP INGAP ELECTROABSORPTION MODULATOR STRUCTURE GROWN BY ATMOSPHERIC-PRESSURE METAL-ORGANIC VAPOR EPITAXY/
Authors: OUGAZZADEN A DEVAUX F RAO EVK SILVESTRE L PATRIARCHE G
Citation: A. Ougazzaden et al., 1.3 MU-M STRAIN-COMPENSATED INASP INGAP ELECTROABSORPTION MODULATOR STRUCTURE GROWN BY ATMOSPHERIC-PRESSURE METAL-ORGANIC VAPOR EPITAXY/, Applied physics letters, 70(1), 1997, pp. 96-98
SUBMILLIWATT OPTICAL BISTABILITY IN WAFER FUSED VERTICAL-CAVITY AT 1.55-MU-M WAVELENGTH
Authors: JEANNES F PATRIARCHE G AZOULAY R OUGAZZADEN A LANDREAU J OUDAR JL
Citation: F. Jeannes et al., SUBMILLIWATT OPTICAL BISTABILITY IN WAFER FUSED VERTICAL-CAVITY AT 1.55-MU-M WAVELENGTH, IEEE photonics technology letters, 8(4), 1996, pp. 539-541
SIDEWALL AND SURFACE-INDUCED DAMAGE COMPARISON BETWEEN REACTIVE ION ETCHING AND INDUCTIVE PLASMA-ETCHING OF INP USING A CH4 H-2/O-2 GAS-MIXTURE/
Authors: ETRILLARD J HELIOT F OSSART P JUHEL M PATRIARCHE G CARCENAC P VIEU C PUECH M MAQUIN P
Citation: J. Etrillard et al., SIDEWALL AND SURFACE-INDUCED DAMAGE COMPARISON BETWEEN REACTIVE ION ETCHING AND INDUCTIVE PLASMA-ETCHING OF INP USING A CH4 H-2/O-2 GAS-MIXTURE/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1056-1061
KINEMATIC VERSUS DYNAMIC APPROACHES OF X-RAY-DIFFRACTION SIMULATION -APPLICATION TO THE CHARACTERIZATION OF INGAAS INGAALAS MULTIPLE-QUANTUM WELLS/
Authors: IDIARTALHOR E MARZIN JY QUILLEC M LEROUX G PATRIARCHE G
Citation: E. Idiartalhor et al., KINEMATIC VERSUS DYNAMIC APPROACHES OF X-RAY-DIFFRACTION SIMULATION -APPLICATION TO THE CHARACTERIZATION OF INGAAS INGAALAS MULTIPLE-QUANTUM WELLS/, Journal of applied physics, 79(5), 1996, pp. 2332-2336
INHIBITION OF THICKNESS VARIATIONS DURING GROWTH OF INASP INGAP AND INASP/INGAASP MULTIQUANTUM WELLS WITH HIGH COMPENSATED STRAINS/
Authors: PATRIARCHE G OUGAZZADEN A GLAS F
Citation: G. Patriarche et al., INHIBITION OF THICKNESS VARIATIONS DURING GROWTH OF INASP INGAP AND INASP/INGAASP MULTIQUANTUM WELLS WITH HIGH COMPENSATED STRAINS/, Applied physics letters, 69(15), 1996, pp. 2279-2281
DRY-ETCHING OF INP IN HELICON HBR PLASMA - MORPHOLOGY AND CHARACTERIZATION OF SURFACE DAMAGE
Authors: ETRILLARD J OSSART P PATRIARCHE G FRANCOU JM
Citation: J. Etrillard et al., DRY-ETCHING OF INP IN HELICON HBR PLASMA - MORPHOLOGY AND CHARACTERIZATION OF SURFACE DAMAGE, Journal de physique. III, 5(5), 1995, pp. 467-481
INTERPHASES AND MECHANICAL-PROPERTIES IN CARBON-FIBERS AL MATRIX COMPOSITES
Authors: PEREZ O PATRIARCHE G LANCIN M VIDALSETIF MH
Citation: O. Perez et al., INTERPHASES AND MECHANICAL-PROPERTIES IN CARBON-FIBERS AL MATRIX COMPOSITES, Journal de physique. IV, 3(C7), 1993, pp. 1693-1698
MISFIT ACCOMMODATION AND DISLOCATIONS IN HETEROEPITAXIAL SEMICONDUCTOR LAYERS - II-VI COMPOUNDS ON GAAS
Authors: PATRIARCHE G RIVIERE JP CASTAING J
Citation: G. Patriarche et al., MISFIT ACCOMMODATION AND DISLOCATIONS IN HETEROEPITAXIAL SEMICONDUCTOR LAYERS - II-VI COMPOUNDS ON GAAS, Journal de physique. III, 3(6), 1993, pp. 1189-1199
EXTENDED DEFECTS IN II-VI SEMICONDUCTOR HETEROEPITAXIAL LAYERS GROWN ON GAAS SUBSTRATES OF VARIOUS ORIENTATIONS
Authors: PATRIARCHE G CARLI AT RIVIERE JP TRIBOULET R MARFAING Y CASTAING J
Citation: G. Patriarche et al., EXTENDED DEFECTS IN II-VI SEMICONDUCTOR HETEROEPITAXIAL LAYERS GROWN ON GAAS SUBSTRATES OF VARIOUS ORIENTATIONS, Physica status solidi. a, Applied research, 138(2), 1993, pp. 437-443
IMPERFECTIONS IN II-VI SEMICONDUCTOR LAYERS EPITAXIALLY GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION ON GAAS
Authors: PATRIARCHE G TRIBOULET R MARFAING Y CASTAING J
Citation: G. Patriarche et al., IMPERFECTIONS IN II-VI SEMICONDUCTOR LAYERS EPITAXIALLY GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION ON GAAS, Journal of crystal growth, 129(3-4), 1993, pp. 375-384
Risultati: 1-20 |