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Results: 1-25/59
Authors:
KAZANTSEV AB
LAMMASNIEMI J
JAAKKOLA R
RAJATORA M
RAUHALA E
RAISANEN J
JAIN RK
PESSA M
Citation: Ab. Kazantsev et al., RADIATION-RESISTANCE OF MBE-GROWN GAINP GAAS-BASED SOLAR-CELLS/, Progress in photovoltaics, 6(1), 1998, pp. 25-33
Authors:
JALONEN M
KONGAS J
TOIVONEN M
SAVOLAINEN P
SALOKATVE A
PESSA M
Citation: M. Jalonen et al., MONOLITHIC SUPER-BRIGHT RED RESONANT-CAVITY LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, IEEE photonics technology letters, 10(7), 1998, pp. 923-925
Authors:
KONGAS J
SAVOLAINEN P
TOIVONEN M
ORSILA S
CORVINI P
JANSEN P
NABIEV RF
PESSA M
Citation: J. Kongas et al., HIGH-EFFICIENCY GAINP-ALGAINP RIDGE-WAVE-GUIDE SINGLE-MODE LASERS OPERATING AT 650 NM, IEEE photonics technology letters, 10(11), 1998, pp. 1533-1535
Authors:
UUSIMAA P
SALOKATVE A
RAKENNUS K
RINTAMOYKKY A
PESSA M
Citation: P. Uusimaa et al., BLUE-GREEN MICROCAVITY LIGHT-EMITTING DIODE WITH MONOLITHIC MGZNSSE ZNSSE BRAGG REFLECTORS/, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 18-21
Authors:
LI W
PESSA M
Citation: W. Li et M. Pessa, LATTICE CONTRACTION IN CARBON-DOPED GAAS EPILAYERS, Physical review. B, Condensed matter, 57(23), 1998, pp. 14627-14629
Authors:
HIRSIMAKI M
SUHONEN S
PERE J
VALDEN M
PESSA M
Citation: M. Hirsimaki et al., ADSORPTION, DESORPTION AND SURFACE-REACTIONS OF CO AND NO ON PD(320), Surface science, 404(1-3), 1998, pp. 187-191
Authors:
UUSIMAA P
RINTAMOYKKY A
ORSILA S
SALOKATVE A
PESSA M
Citation: P. Uusimaa et al., MBE GROWTH OF MONOLITHIC MGZNSSE ZNSSE/CDZNSE MICROCAVITY LED STRUCTURES/, Journal of crystal growth, 185, 1998, pp. 783-786
Authors:
LI W
LAMMASNIEMI J
KAZANTSEV AB
JAAKKOLA R
MAKELA T
PESSA M
Citation: W. Li et al., GAINP ALINP TUNNEL JUNCTION FOR GAINP/GAAS TANDEM SOLAR-CELLS/, Electronics Letters, 34(4), 1998, pp. 406-407
Authors:
JALONEN M
KONGAS J
TOIVONEN M
SAVOLAINEN P
ORSILA S
SALOKATVE A
PESSA M
Citation: M. Jalonen et al., MONOLITHIC 1.3-MU-M RESONANT-CAVITY LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, Electronics Letters, 34(15), 1998, pp. 1519-1520
Authors:
SAVOLAINEN P
TOIVONEN M
KONGAS J
PESSA M
CORVINI P
JANSEN M
Citation: P. Savolainen et al., RECORD QUANTUM EFFICIENCY (92-PERCENT) OPERATION OF 680 NM GAINP ALGAINP RIDGE-WAVE-GUIDE SINGLEMODE LASERS/, Electronics Letters, 34(11), 1998, pp. 1104-1105
Authors:
UUSIMAA P
RAKENNUS K
SALOKATVE A
PESSA M
LIKONEN J
Citation: P. Uusimaa et al., MOLECULAR-BEAM EPITAXY OF P-TYPE ZNSSE USING A NITRIC-OXIDE PLASMA SOURCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 2426-2427
Authors:
PESSA M
TOIVONEN M
JALONEN M
SAVOLAINEN P
SALOKATVE A
Citation: M. Pessa et al., ALL-SOLID-SOURCE MOLECULAR-BEAM EPITAXY FOR GROWTH OF III-V COMPOUND SEMICONDUCTORS, Thin solid films, 306(2), 1997, pp. 237-243
Authors:
VALDEN M
PERE J
HIRSIMAKI M
SUHONEN S
PESSA M
Citation: M. Valden et al., ACTIVATED ADSORPTION OF METHANE ON CLEAN AND OXYGEN-MODIFIED PT(111) AND PD(110), Surface science, 377(1-3), 1997, pp. 605-609
Authors:
TOIVONEN M
SAVOLAINEN P
ASONEN H
PESSA M
Citation: M. Toivonen et al., SOLID-SOURCE MBE FOR GROWTH OF LASER-DIODE MATERIALS, Journal of crystal growth, 175, 1997, pp. 37-41
Authors:
LINDELL A
PESSA M
SALOKATVE A
BERNARDINI F
NIEMINEN RM
PAALANEN M
Citation: A. Lindell et al., BAND OFFSETS AT THE GAINP GAAS HETEROJUNCTION, Journal of applied physics, 82(7), 1997, pp. 3374-3380
Authors:
ZHANG G
OVTCHINNIKOV A
NAPPI J
SMEKALIN K
SAVOLAINEN P
PESSA M
ASONEN H
Citation: G. Zhang et al., FAR-FIELD, EFFICIENCY AND LOSS OF 980NM INGAAS GAINASP/GAINP SCH QUANTUM-WELL LASERS/, Electronics Letters, 33(6), 1997, pp. 489-491
OXIDE-CONFINED RESONANT-CAVITY RED LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY
Authors:
JALONEN M
TOIVONEN M
KONGAS J
SALOKATVE A
PESSA M
Citation: M. Jalonen et al., OXIDE-CONFINED RESONANT-CAVITY RED LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, Electronics Letters, 33(23), 1997, pp. 1989-1990
Authors:
JALONEN M
TOIVONEN M
SAVOLAINEN P
KONGAS J
PESSA M
Citation: M. Jalonen et al., EFFECTS OF RAPID THERMAL ANNEALING ON GAINP ALGAINP LASERS GROWN BY ALL-SOLID-SOURCE MOLECULAR-BEAM EPITAXY/, Applied physics letters, 71(4), 1997, pp. 479-481
Authors:
SAVOLAINEN P
PESSA M
Citation: P. Savolainen et M. Pessa, HIGH-POWER, HIGH-EFFICIENCY GAINP ALGAINP LASER-DIODE/, JPN J A P 2, 35(11B), 1996, pp. 1501-1502
Authors:
SAVOLAINEN P
TOIVONEN M
ASONEN H
PESSA M
MURISON R
Citation: P. Savolainen et al., HIGH-PERFORMANCE 98O-NM STRAINED-LAYER GAINAS-GAINASP-GAINP QUANTUM-WELL LASERS GROWN BY ALL SOLID-SOURCE MOLECULAR-BEAM EPITAXY, IEEE photonics technology letters, 8(8), 1996, pp. 986-988
Authors:
TAPPURA K
AARIK J
PESSA M
Citation: K. Tappura et al., HIGH-POWER GAINP-ALGAINP QUANTUM-WELL LASERS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, IEEE photonics technology letters, 8(3), 1996, pp. 319-321
Authors:
PESSA M
NAPPI J
SAVOLAINEN P
TOIVONEN M
MURISON R
OVTCHINNIKOV A
ASONEN H
Citation: M. Pessa et al., STATE-OF-THE-ART ALUMINUM-FREE 980-NM LASER-DIODES, Journal of lightwave technology, 14(10), 1996, pp. 2356-2361
Authors:
TOIVONEN M
SAVOLAINEN P
PESSA M
Citation: M. Toivonen et al., HIGH-PERFORMANCE GAINP ALGAINP STRAINED-QUANTUM-WELL LASERS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY/, Semiconductor science and technology, 11(12), 1996, pp. 1923-1926
Authors:
VALDEN M
XIANG N
PERE J
PESSA M
Citation: M. Valden et al., DISSOCIATIVE CHEMISORPTION OF METHANE ON CLEAN AND OXYGEN PRECOVERED PT(111), Applied surface science, 99(2), 1996, pp. 83-89
Authors:
MAKINEN J
LAINE T
PARTANEN J
SAARINEN K
HAUTOJARVI P
TAPPURA K
HAKKARAINEN T
ASONEN H
PESSA M
KAUPPINEN JP
VANTTINEN K
PAALANEN MA
LIKONEN J
Citation: J. Makinen et al., DONOR LEVELS AND THE MICROSCOPIC STRUCTURE OF THE DX CENTER IN N-TYPESI-DOPED ALXGA0.51-IN0.49P GROWN BY MOLECULAR-BEAM EPITAXY, Physical review. B, Condensed matter, 53(12), 1996, pp. 7851-7862