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Results: 1-23 |
Results: 23
Monte Carlo analysis of dynamic and noise performance of submicron MOSFETsat RF and microwave frequencies
Authors: Rengel, R Mateos, J Pardo, D Gonzalez, T Martin, MJ
Citation: R. Rengel et al., Monte Carlo analysis of dynamic and noise performance of submicron MOSFETsat RF and microwave frequencies, SEMIC SCI T, 16(11), 2001, pp. 939-946
High injection effects on noise characteristics of SiBJTs and SiGeHBTs
Authors: Martin-Martinez, MJ Perez, S Pardo, D Gonzalez, T
Citation: Mj. Martin-martinez et al., High injection effects on noise characteristics of SiBJTs and SiGeHBTs, MICROEL REL, 41(6), 2001, pp. 847-854
Monte Carlo simulation of electronic characteristics in short channel delta-doped AlInAs/GaInAs HEMTs
Authors: Mateos, J Gonzalez, T Pardo, D Hoel, V Cappy, A
Citation: J. Mateos et al., Monte Carlo simulation of electronic characteristics in short channel delta-doped AlInAs/GaInAs HEMTs, MICROEL REL, 41(1), 2001, pp. 73-77
Monte Carlo analysis of the noise behavior in Si bipolar junction transistors and SiGe heterojunction bipolar transistors at radio frequencies
Authors: Martin-Martinez, MJ Perez, S Pardo, D Gonzalez, T
Citation: Mj. Martin-martinez et al., Monte Carlo analysis of the noise behavior in Si bipolar junction transistors and SiGe heterojunction bipolar transistors at radio frequencies, J APPL PHYS, 90(3), 2001, pp. 1582-1588
Microscopic analysis of the influence of Ge profiles on the current-noise operation mode of n-Si/p-Si1-xGex heterostructures
Authors: Martin, MJ Pardo, D Velazquez, JE
Citation: Mj. Martin et al., Microscopic analysis of the influence of Ge profiles on the current-noise operation mode of n-Si/p-Si1-xGex heterostructures, SEMIC SCI T, 15(3), 2000, pp. 277-285
Effect of dimensionality on shot-noise suppression in nondegenerate diffusive conductors
Authors: Gonzalez, T Mateos, J Pardo, D Bulashenko, OM Reggiani, L
Citation: T. Gonzalez et al., Effect of dimensionality on shot-noise suppression in nondegenerate diffusive conductors, MICROEL REL, 40(11), 2000, pp. 1951-1954
Microscopic analysis of voltage noise operation mode in SiGe/Si bipolar heterojunctions: Influence of the SiGe strained layer
Authors: Martin, MJ Pardo, D Velazquez, JE
Citation: Mj. Martin et al., Microscopic analysis of voltage noise operation mode in SiGe/Si bipolar heterojunctions: Influence of the SiGe strained layer, J APPL PHYS, 88(3), 2000, pp. 1511-1514
Monte Carlo simulator for the design optimization of low-noise HEMTs
Authors: Mateos, J Gonzalez, T Pardo, D Hoel, V Cappy, A
Citation: J. Mateos et al., Monte Carlo simulator for the design optimization of low-noise HEMTs, IEEE DEVICE, 47(10), 2000, pp. 1950-1956
Langevin forces and generalized transfer fields for noise modeling in deepsubmicron devices
Authors: Shiktorov, P Starikov, E Gruzinskis, V Gonzalez, T Mateos, J Pardo, D Reggiani, L Varani, L Vaissiere, JC
Citation: P. Shiktorov et al., Langevin forces and generalized transfer fields for noise modeling in deepsubmicron devices, IEEE DEVICE, 47(10), 2000, pp. 1992-1998
Improved Monte Carlo algorithm for the simulation of delta-doped AlInAs/GaInAs HEMT's
Authors: Mateos, J Gonzalez, T Pardo, D Hoel, V Happy, H Cappy, A
Citation: J. Mateos et al., Improved Monte Carlo algorithm for the simulation of delta-doped AlInAs/GaInAs HEMT's, IEEE DEVICE, 47(1), 2000, pp. 250-253
Monte carlo investigation of shot-noise suppression in nondegenerate ballistic and diffusive transport regimes
Authors: Reggiani, L Reklaitis, A Gonzalez, T Mateos, J Pardo, D Bulashenko, OM
Citation: L. Reggiani et al., Monte carlo investigation of shot-noise suppression in nondegenerate ballistic and diffusive transport regimes, AUST J PHYS, 53(1), 2000, pp. 3-34
Thermal conductivity of nonequilibrium carriers
Authors: Varani, L Gaubert, P Vaissiere, JC Nougier, JP Mateos, J Gonzalez, T Pardo, D Reggiani, L Starikov, E Shiktorov, P Gruzhinskis, V
Citation: L. Varani et al., Thermal conductivity of nonequilibrium carriers, PHYSICA B, 272(1-4), 1999, pp. 247-249
Generalized transfer-fields and Langevin forces for hot-carrier fluctuations in semiconductor submicron devices
Authors: Starikov, E Shiktorov, P Gruzinskis, V Reggiani, L Varani, L Vaissiere, JC Nougier, JP Gonzalez, T Mateos, J Pardo, D
Citation: E. Starikov et al., Generalized transfer-fields and Langevin forces for hot-carrier fluctuations in semiconductor submicron devices, PHYSICA B, 272(1-4), 1999, pp. 260-262
2D bipolar Monte Carlo calculation of current fluctuations at the onset ofquasisaturation of a SiBJT
Authors: Martinez, MJM Pardo, D Velazquez, JE
Citation: Mjm. Martinez et al., 2D bipolar Monte Carlo calculation of current fluctuations at the onset ofquasisaturation of a SiBJT, PHYSICA B, 272(1-4), 1999, pp. 263-266
Shot-noise suppression in nondegenerate semiconductors: the role of an energy-dependent scattering time
Authors: Gonzalez, T Mateos, J Pardo, D Reggiani, L Bulashenko, OM
Citation: T. Gonzalez et al., Shot-noise suppression in nondegenerate semiconductors: the role of an energy-dependent scattering time, PHYSICA B, 272(1-4), 1999, pp. 282-284
Joint effect of Fermi and Coulomb correlations on shot-noise suppression in ballistic conductors
Authors: Gonzalez, T Mateos, J Pardo, D Reggiani, L
Citation: T. Gonzalez et al., Joint effect of Fermi and Coulomb correlations on shot-noise suppression in ballistic conductors, PHYSICA B, 272(1-4), 1999, pp. 285-287
Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis
Authors: Mateos, J Gonzalez, T Pardo, D Hoel, V Cappy, A
Citation: J. Mateos et al., Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis, SEMIC SCI T, 14(9), 1999, pp. 864-870
Towards the Monte Carlo simulation of resonant tunnelling diodes using time-dependent wavepackets and Bohm trajectories
Authors: Oriols, X Garcia-Garcia, JJ Martin, F Sune, J Mateos, J Gonzalez, T Pardo, D Vanbesien, O
Citation: X. Oriols et al., Towards the Monte Carlo simulation of resonant tunnelling diodes using time-dependent wavepackets and Bohm trajectories, SEMIC SCI T, 14(6), 1999, pp. 532-542
Injection statistics simulator for dynamic analysis of noise in mesoscopicdevices
Authors: Gonzalez, T Mateos, J Pardo, D Varani, L Reggiani, L
Citation: T. Gonzalez et al., Injection statistics simulator for dynamic analysis of noise in mesoscopicdevices, SEMIC SCI T, 14(11), 1999, pp. L37-L40
Microscopic analysis of shot-noise suppression in nondegenerate diffusive conductors
Authors: Gonzalez, T Mateos, J Pardo, D Bulashenko, OM Reggiani, L
Citation: T. Gonzalez et al., Microscopic analysis of shot-noise suppression in nondegenerate diffusive conductors, PHYS REV B, 60(4), 1999, pp. 2670-2679
Comment on "Universality of the 1/3 shot-noise suppression factor in nondegenerate diffusive conductors" - Reply
Authors: Gonzalez, T Gonzalez, C Mateos, J Pardo, D Reggiani, L Bulashenko, OM Rubi, JM
Citation: T. Gonzalez et al., Comment on "Universality of the 1/3 shot-noise suppression factor in nondegenerate diffusive conductors" - Reply, PHYS REV L, 83(6), 1999, pp. 1268-1268
Spatiotemporal correlation of conduction current fluctuations within a hydrodynamic-Langevin scheme
Authors: Shiktorov, P Starikov, E Gruzinskis, V Gonzalez, T Mateos, J Pardo, D Reggiani, L Varani, L Vaissiere, JC Nougier, JP
Citation: P. Shiktorov et al., Spatiotemporal correlation of conduction current fluctuations within a hydrodynamic-Langevin scheme, APPL PHYS L, 74(5), 1999, pp. 723-725
Microscopic analysis of the influence of strain and band-gap offsets on noise characteristics in Si1-xGex/Si heterojunctions
Authors: Martinez, MJM Pardo, D Velazquez, JE
Citation: Mjm. Martinez et al., Microscopic analysis of the influence of strain and band-gap offsets on noise characteristics in Si1-xGex/Si heterojunctions, J APPL PHYS, 84(9), 1998, pp. 5012-5020
Risultati: 1-23 |