Citation: V. Parkhutik et Jmm. Duart, Analysis of electrical and optical properties of silicon nanoclusters using flicker-noise spectroscopy, APPL ORGAN, 15(5), 2001, pp. 359-364
Citation: V. Parkhutik, Silicon anodic oxides grown in the oscillatory anodisation regime - kinetics of growth, composition and electrical properties, SOL ST ELEC, 45(8), 2001, pp. 1451-1463
Authors:
Parkhutik, V
Chu, Y
You, H
Nagy, Z
Montano, PA
Citation: V. Parkhutik et al., X-ray reflectivity study of formation of multilayer porous anodic oxides of silicon, J POROUS MA, 7(1-3), 2000, pp. 27-31
Citation: V. Parkhutik et al., Processing of infrared spectroscopy data on thin porous films using software "Prospect", J POROUS MA, 7(1-3), 2000, pp. 239-242
Citation: V. Parkhutik et al., Application of flicker-noise spectroscopy in studies of porous silicon growth and properties, MAT SCI E B, 69, 2000, pp. 53-58
Authors:
Parkhutik, V
Matveeva, E
Perez, R
Alamo, J
Beltran, D
Citation: V. Parkhutik et al., Mechanism of large oscillations of anodic potential during anodization of silicon in H3PO4/HF solutions, MAT SCI E B, 69, 2000, pp. 553-558
Citation: R. Fenollosa et al., X-ray reflectivity study of formation of multilayer porous anodic oxides of silicon, MAT SCI E A, 288(2), 2000, pp. 235-238
Authors:
Parkhutik, V
Fenollosa, R
Matveeva, E
Nguyen, TP
Rendu, PL
Tran, VH
Citation: V. Parkhutik et al., AC conductivity of vacuum deposited phenylene-vinylene oligomers/porous silicon structures, SYNTH METAL, 115(1-3), 2000, pp. 93-96
Citation: V. Parkhutik et E. Matveeva, Electrochemical impedance characterization of transient effects in anodic oxidation of silicon, PHYS ST S-A, 182(1), 2000, pp. 37-44
Authors:
Fenollosa, R
Parkhutik, V
Garcia, BJ
Almazan, RM
Citation: R. Fenollosa et al., The role of stress and percolation effects on the anodic silicon oxides growth mechanism, PHYS ST S-A, 182(1), 2000, pp. 79-86
Authors:
Parkhutik, V
Timashev, S
Nadal, A
Ferrer, C
Budnikov, Y
Colomina, F
Citation: V. Parkhutik et al., Flicker noise spectroscopy - a new method of studying non-stationary effects in electrical conductivity of oxides, MICROEL REL, 40(4-5), 2000, pp. 601-604
Authors:
Parkhutik, V
Gomez, FC
Tarazona, LM
Esteve, RF
Citation: V. Parkhutik et al., Oscillatory kinetics of anodic oxidation of silicon - influence of the crystallographic orientation, MICROEL REL, 40(4-5), 2000, pp. 795-798
Citation: V. Parkhutik et S. Timashev, Kinetics of porous silicon growth studied using flicker-noise spectroscopy, J APPL PHYS, 87(10), 2000, pp. 7558-7566