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Results: 1-13 |
Results: 13
Excited-state magnetoluminescence of InAs/GaAs self-assembled quantum dots
Authors: Paskov, PP Holtz, PO Monemar, B Garcia, JM Schoenfeld, WV Petroff, PM
Citation: Pp. Paskov et al., Excited-state magnetoluminescence of InAs/GaAs self-assembled quantum dots, JPN J A P 1, 40(3B), 2001, pp. 1998-2001
Optical up-conversion processes in InAs quantum dots
Authors: Paskov, PP Holtz, PO Monemar, B Garcia, JM Schoenfeld, WV Petroff, PM
Citation: Pp. Paskov et al., Optical up-conversion processes in InAs quantum dots, JPN J A P 1, 40(3B), 2001, pp. 2080-2083
Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN
Authors: Valcheva, E Paskova, T Abrashev, MV Persson, PAO Paskov, PP Goldys, EM Beccard, R Heuken, M Monemar, B
Citation: E. Valcheva et al., Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN, MAT SCI E B, 82(1-3), 2001, pp. 35-38
Optical characterization of InGaN/GaN MQW structures without in phase separation
Authors: Monemar, B Paskov, PP Pozina, G Paskova, T Bergman, JP Iwaya, M Nitta, S Amano, H Akasaki, I
Citation: B. Monemar et al., Optical characterization of InGaN/GaN MQW structures without in phase separation, PHYS ST S-B, 228(1), 2001, pp. 157-160
Spin-exchange splitting of excitons in GaN - art. no. 115201
Authors: Paskov, PP Paskova, T Holtz, PO Monemar, B
Citation: Pp. Paskov et al., Spin-exchange splitting of excitons in GaN - art. no. 115201, PHYS REV B, 6411(11), 2001, pp. 5201
Defect reduction in HVPE growth of GaN and related optical spectra
Authors: Paskova, T Paskov, PP Darakchieva, V Tungasmita, S Birch, J Monemar, B
Citation: T. Paskova et al., Defect reduction in HVPE growth of GaN and related optical spectra, PHYS ST S-A, 183(1), 2001, pp. 197-203
Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer
Authors: Paskova, T Valcheva, E Birch, J Tungasmita, S Persson, POA Paskov, PP Evtimova, S Abrashev, M Monemar, B
Citation: T. Paskova et al., Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer, J CRYST GR, 230(3-4), 2001, pp. 381-386
Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates
Authors: Valcheva, E Paskova, T Abrashev, MV Paskov, PP Persson, POA Goldys, EM Beccard, R Heuken, M Monemar, B
Citation: E. Valcheva et al., Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates, J APPL PHYS, 90(12), 2001, pp. 6011-6016
Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN
Authors: Paskova, T Goldys, EM Paskov, PP Wahab, Q Wilzen, L de Jong, MP Monemar, B
Citation: T. Paskova et al., Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN, APPL PHYS L, 78(26), 2001, pp. 4130-4132
Magneto-optical studies of highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells
Authors: Wongmanerod, S Paskov, PP Holtz, PO Monemar, B Mauritz, O Reginski, K Bugajski, M
Citation: S. Wongmanerod et al., Magneto-optical studies of highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells, PHYS REV B, 62(23), 2000, pp. 15952-15961
Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots
Authors: Paskov, PP Holtz, PO Monemar, B Garcia, JM Schoenfeld, WV Petroff, PM
Citation: Pp. Paskov et al., Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots, PHYS REV B, 62(11), 2000, pp. 7344-7349
Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots
Authors: Paskov, PP Holtz, PO Monemar, B Garcia, JM Schoenfeld, WV Petroff, PM
Citation: Pp. Paskov et al., Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots, APPL PHYS L, 77(6), 2000, pp. 812-814
Effects of the conduction-band nonparabolicity on the gain in bulk InAsSb semiconductor lasers
Authors: Paskov, PP
Citation: Pp. Paskov, Effects of the conduction-band nonparabolicity on the gain in bulk InAsSb semiconductor lasers, J APPL PHYS, 85(11), 1999, pp. 7967-7969
Risultati: 1-13 |