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Results: 1-25/34
Authors:
Piscopiello, E
Catalano, M
Antisari, MV
Passaseo, A
Branca, E
Cingolani, R
Berti, M
Citation: E. Piscopiello et al., Influence of the N-2/H-2 ratio on the structural features of InxGa1-xN/GaNfilms grown by MOCVD, MAT SCI E B, 87(3), 2001, pp. 237-243
Authors:
Taurino, A
Catalano, M
De Giorgi, M
Passaseo, A
Cingolani, R
Citation: A. Taurino et al., Effects of coupling on the structural properties of InxGa1-xAs/GaAs 1-D and 0-D sell-organized quantum structures, MAT SCI E B, 87(3), 2001, pp. 256-261
Authors:
De Giorgi, M
Passaseo, A
Rinaldi, R
Johal, T
Cingolani, R
Taurino, A
Catalano, M
Crozier, P
Citation: M. De Giorgi et al., Nanoscale compositional fluctuations in single InGaAs/GaAs quantum dots, PHYS ST S-B, 224(1), 2001, pp. 17-20
Authors:
Shumway, J
Williamson, AJ
Zunger, A
Passaseo, A
DeGiorgi, M
Cingolani, R
Catalano, M
Crozier, P
Citation: J. Shumway et al., Electronic structure consequences of In/Ga composition variations in self-assembled InxGa1-xAs/GaAs alloy quantum dots - art. no. 125302, PHYS REV B, 6412(12), 2001, pp. 5302
Authors:
De Giorgi, M
Taurino, A
Passaseo, A
Catalano, M
Cingolani, R
Citation: M. De Giorgi et al., Interpretation of phase and strain contrast of TEM images of InxGa1-xAs/GaAs quantum dots - art. no. 245302, PHYS REV B, 6324(24), 2001, pp. 5302
Authors:
Di Carlo, A
Reale, A
Lugli, P
Traetta, G
Lomascolo, M
Passaseo, A
Cingolani, R
Bonfiglio, A
Berti, M
Napolitani, E
Natali, M
Sinha, SK
Drigo, AV
Vinattieri, A
Colocci, M
Citation: A. Di Carlo et al., Mesoscopic-capacitor effect in GaN/AlxGa1-xN quantum wells: Effects on theelectronic states - art. no. 235305, PHYS REV B, 6323(23), 2001, pp. 5305
Authors:
Traetta, G
Di Carlo, A
Reale, A
Lugli, P
Lomascolo, M
Passaseo, A
Cingolani, R
Bonfiglio, A
Berti, M
Napolitani, E
Natali, M
Sinha, SK
Drigo, AV
Citation: G. Traetta et al., Charge storage and screening of the internal field in GaN/AlGaN quantum wells, J CRYST GR, 230(3-4), 2001, pp. 492-496
Authors:
Passaseo, A
Rinaldi, R
Longo, M
Antonaci, S
Convertino, AL
Cingolani, R
Taurino, A
Catalano, M
Citation: A. Passaseo et al., Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 mu m, J APPL PHYS, 89(8), 2001, pp. 4341-4348
Authors:
Bonfiglio, A
Traetta, G
Lomascolo, M
Passaseo, A
Cingolani, R
Citation: A. Bonfiglio et al., Origin of persistent photocurrent in GaN/AlGaN multiquantum wells, J APPL PHYS, 89(10), 2001, pp. 5782-5784
Authors:
De Giorgi, M
Lingk, C
von Plessen, G
Feldmann, J
De Rinaldis, S
Passaseo, A
De Vittorio, M
Cingolani, R
Lomascolo, M
Citation: M. De Giorgi et al., Capture and thermal re-emission of carriers in long-wavelength InGaAs/GaAsquantum dots, APPL PHYS L, 79(24), 2001, pp. 3968-3970
Direct quantitative measurement of compositional enrichment and variationsin InyGa1-yAs quantum dots
Authors:
Crozier, PA
Catalano, M
Cingolani, R
Passaseo, A
Citation: Pa. Crozier et al., Direct quantitative measurement of compositional enrichment and variationsin InyGa1-yAs quantum dots, APPL PHYS L, 79(19), 2001, pp. 3170-3172
Authors:
Passaseo, A
Maruccio, G
De Vittorio, M
De Rinaldis, S
Todaro, T
Rinaldi, R
Cingolani, R
Citation: A. Passaseo et al., Dependence of the emission wavelength on the internal electric field in quantum-dot laser structures grown by metal-organic chemical-vapor deposition, APPL PHYS L, 79(10), 2001, pp. 1435-1437
Authors:
Galluppi, M
Frova, A
Capizzi, M
Boscherini, F
Frigeri, P
Franchi, S
Passaseo, A
Citation: M. Galluppi et al., Atomic equilibrium concentrations in (InGa)As quantum dots, APPL PHYS L, 78(20), 2001, pp. 3121-3123
Authors:
Passaseo, A
Maruccio, G
De Vittorio, M
Rinaldi, R
Cingolani, R
Lomascolo, M
Citation: A. Passaseo et al., Wavelength control from 1.25 to 1.4 mu m in InxGa1-xAs quantum dot structures grown by metal organic chemical vapor deposition, APPL PHYS L, 78(10), 2001, pp. 1382-1384
Authors:
De Giorgi, M
Vasanelli, A
Rinaldi, R
Anni, M
Lomascolo, M
Antonaci, S
Passaseo, A
Cingolani, R
Taurino, A
Catalano, M
Di Fabrizio, E
Citation: M. De Giorgi et al., Correlation between shape and electronic states in nanostructures, MICRON, 31(3), 2000, pp. 245-251
Authors:
Lomascolo, M
Anni, M
De Giorgi, M
Rinaldi, R
Passaseo, A
Cingolani, R
Lorenzoni, A
Andreani, LC
Citation: M. Lomascolo et al., Time-resolved magnetospectroscopy of InxGa1-xAs/GaAs V-shaped quantum wires, PHYS REV B, 61(19), 2000, pp. 12658-12661
Authors:
Lomascolo, M
Traetta, G
Passaseo, A
Longo, M
Cannoletta, D
Cingolani, R
Bonfiglio, A
Della Sala, F
Di Carlo, A
Lugli, P
Natali, M
Sinha, SK
Berti, M
Drigo, AV
Botchkarev, H
Morkoc, H
Citation: M. Lomascolo et al., Optical and transport properties of GaN/Al0.15Ga0.85N quantum wells, PHYS ST S-A, 178(1), 2000, pp. 73-78
Authors:
Lorenzoni, A
Andreani, LC
Lomascolo, M
Anni, M
De Giorgi, M
Rinaldi, R
Passaseo, A
Cingolani, R
Citation: A. Lorenzoni et al., Electronic levels and recombination lifetimes for quantum wires in a magnetic field, PHYS ST S-A, 178(1), 2000, pp. 239-242
Authors:
De Giorgi, M
Anni, M
Turco, C
Passaseo, A
Rinaldi, R
Cannoletta, D
Cingolani, R
Lomascolo, M
Citation: M. De Giorgi et al., Excitonic and free carrier recombination in InxGa1-xAs/GaAs V-shaped quantum wire for different in content, PHYS ST S-A, 178(1), 2000, pp. 243-248
Authors:
De Giorgi, M
Rinaldi, R
Passaseo, A
Lomascolo, M
Cingolani, R
Ferreira, R
Bastard, G
Taurino, A
Catalano, M
Citation: M. De Giorgi et al., Effects of quantum mechanical coupling on the optical properties of vertically stacked V-groove quantum wires, J APPL PHYS, 88(2), 2000, pp. 772-776
Authors:
Catalano, M
Taurino, A
Lomascolo, M
Vasanelli, L
De Giorgi, M
Passaseo, A
Rinaldi, R
Cingolani, R
Mauritz, O
Goldoni, G
Rossi, F
Molinari, E
Crozier, P
Citation: M. Catalano et al., Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires, J APPL PHYS, 87(5), 2000, pp. 2261-2264
Authors:
Pomarico, A
Lomascolo, M
Passaseo, A
Cingolani, R
Berti, M
Napolitani, E
Natali, M
Sinha, SK
Drigo, AV
Citation: A. Pomarico et al., Broad-area optical characterization of well-width homogeneity in GaN/AlxGa1-xN multiple quantum wells grown on sapphire wafers, APPL PHYS L, 77(25), 2000, pp. 4127-4129
Authors:
Cingolani, R
Rinaldi, R
DeVittorio, M
Passaseo, A
DeGiorgi, M
Visconti, P
Turco, C
Citation: R. Cingolani et al., Optical processes and electronic states in InGaAs/GaAs V-groove quantum wire lasers, SPECT ACT A, 55(10), 1999, pp. 1923-1929
Authors:
Lomascolo, M
Rinaldi, R
Passaseo, A
De Vittorio, M
De Giorgi, M
Cingolani, R
De Caro, L
Tapfer, L
Taurino, A
Catalano, M
Citation: M. Lomascolo et al., Time resolved screening of the piezoelectric field in InGaAs/GaAs V-shapedquantum wires of variable profile, J PHYS-COND, 11(31), 1999, pp. 5989-5997
Authors:
Taurino, A
Catalano, M
Vasanelli, L
Passaseo, A
Rinaldi, R
Cingolani, R
Citation: A. Taurino et al., TEM characterization of single and multiple InGaAs/GaAs quantum wires grown by metal-organic vapor phase epitaxy on V-grooved substrates, MAT SCI E B, 67(1-2), 1999, pp. 39-45