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Results: 1-25 | 26-30
Results: 1-25/30
Investigation of Ge film growth on the Si(100) surface by recording diffractometry
Authors: Nikiforov, AI Cherepanov, VA Pchelyakov, OP
Citation: Ai. Nikiforov et al., Investigation of Ge film growth on the Si(100) surface by recording diffractometry, SEMICONDUCT, 35(9), 2001, pp. 988-991
Self-organizing and self-assembling of GexSi1-x quantum dots - mechanisms of formation by MBE
Authors: Bolhovityanov, YB Pchelyakov, OP Sokolov, LV Nikiforov, AI Voigtlander, B
Citation: Yb. Bolhovityanov et al., Self-organizing and self-assembling of GexSi1-x quantum dots - mechanisms of formation by MBE, IAN FIZ, 65(2), 2001, pp. 180-186
Solid solutions GeSi grown by MBE on a low temperature Si(001) buffer layer: specific features of plastic relaxation
Authors: Bolkhovityanov, YB Gutakovskii, AK Mashanov, VI Pchelyakov, OP Revenko, MA Sokolov, LV
Citation: Yb. Bolkhovityanov et al., Solid solutions GeSi grown by MBE on a low temperature Si(001) buffer layer: specific features of plastic relaxation, THIN SOL FI, 392(1), 2001, pp. 98-106
Phonons in Ge/Si superlattices with Ge quantum dots
Authors: Milekhin, AG Nikiforov, AI Pchelyakov, OP Schulze, S Zahn, DRT
Citation: Ag. Milekhin et al., Phonons in Ge/Si superlattices with Ge quantum dots, JETP LETTER, 73(9), 2001, pp. 461-464
Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties
Authors: Pchelyakov, OP Bolkhovityanov, YB Dvurechenskii, AV Sokolov, LV Nikiforov, AI Yakimov, AI Voigtlander, B
Citation: Op. Pchelyakov et al., Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties, SEMICONDUCT, 34(11), 2000, pp. 1229-1247
Photoresistance of Si/Ge/Si structures with germanium quantum dots
Authors: Shegai, OA Zhuravlev, KS Markov, VA Nikiforov, AI Pchelyakov, OP
Citation: Oa. Shegai et al., Photoresistance of Si/Ge/Si structures with germanium quantum dots, SEMICONDUCT, 34(11), 2000, pp. 1311-1315
Molecular beam epitaxy of nanostructures based on silicon and germanium
Authors: Pchelyakov, OP Bolkhovityanov, YB Sokolov, LV Nikiforov, AI Voigtlander, B
Citation: Op. Pchelyakov et al., Molecular beam epitaxy of nanostructures based on silicon and germanium, IAN FIZ, 64(2), 2000, pp. 205-214
Investigation of the atomic crystal plane relief by X-ray epitaxial film interferometer
Authors: Kolesnikov, AV Vasilenko, AP Trukhanov, EM Sokolov, LV Fedorov, AA Pchelyakov, OP Romanov, SI
Citation: Av. Kolesnikov et al., Investigation of the atomic crystal plane relief by X-ray epitaxial film interferometer, APPL SURF S, 166(1-4), 2000, pp. 82-86
Evidence for a negative interband photoconductivity in arrays of Ge/Si type-II quantum dots
Authors: Yakimov, AI Dvurechenskii, AV Nikiforov, AI Pchelyakov, OP Nenashev, AV
Citation: Ai. Yakimov et al., Evidence for a negative interband photoconductivity in arrays of Ge/Si type-II quantum dots, PHYS REV B, 62(24), 2000, pp. R16283-R16286
Molecular beam epitaxy: equipment, instruments, technology
Authors: Pchelyakov, OP
Citation: Op. Pchelyakov, Molecular beam epitaxy: equipment, instruments, technology, USP FIZ NAU, 170(9), 2000, pp. 993-995
In situ RHEED control of self-organized Ge quantum dots
Authors: Nikiforov, AI Cherepanov, VA Pchelyakov, OP Dvurechenskii, AV Yakimov, AI
Citation: Ai. Nikiforov et al., In situ RHEED control of self-organized Ge quantum dots, THIN SOL FI, 380(1-2), 2000, pp. 158-163
RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots
Authors: Markov, VA Cheng, HH Chia, CT Nikiforov, AI Cherepanov, VA Pchelyakov, OP Zhuravlev, KS Talochkin, AB McGlynn, E Henry, MO
Citation: Va. Markov et al., RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots, THIN SOL FI, 369(1-2), 2000, pp. 79-83
Molecular beam epitaxy of silicon-germanium nanostructures
Authors: Pchelyakov, OP Bolkhovityanova, YB Dvurechenskii, AV Nikiforov, AI Yakimov, AI Voigtlander, B
Citation: Op. Pchelyakov et al., Molecular beam epitaxy of silicon-germanium nanostructures, THIN SOL FI, 367(1-2), 2000, pp. 75-84
Negative interband photoconductivity in Ge/Si heterostructures with quantum dots of the second type
Authors: Yakimov, AI Dvurechenskii, AV Nikiforov, AI Pchelyakov, OP
Citation: Ai. Yakimov et al., Negative interband photoconductivity in Ge/Si heterostructures with quantum dots of the second type, JETP LETTER, 72(4), 2000, pp. 186-189
An X-ray epitaxial film interferometer as a tool for studying the structure of a semiconductor heterosystem
Authors: Fedorov, AA Kolesnikov, AV Vasilenko, AP Pchelyakov, OP Romanov, SI Sokolov, LV Trukhanov, EM
Citation: Aa. Fedorov et al., An X-ray epitaxial film interferometer as a tool for studying the structure of a semiconductor heterosystem, INSTR EXP R, 43(2), 2000, pp. 271-274
Direct synthesis of nanostructures during molecular beam epitaxy of Ge on Si
Authors: Pchelyakov, OP Dvurechensky, AV Markov, VA Nikiforov, AI Jakimov, AI
Citation: Op. Pchelyakov et al., Direct synthesis of nanostructures during molecular beam epitaxy of Ge on Si, IAN FIZ, 63(2), 1999, pp. 228-234
The epitaxy of silicon and germanium-silicon films on porous Si
Authors: Gutakovsky, AK Romanov, SI Pchelyakov, OP Mashanov, VI Sokolov, LV Larichkin, IV
Citation: Ak. Gutakovsky et al., The epitaxy of silicon and germanium-silicon films on porous Si, IAN FIZ, 63(2), 1999, pp. 255-261
Hole energy spectrum in Ge self-assembled quantum dots in Si
Authors: Dvurechensky, AV Yakimov, AI Markov, VA Nikiforov, AI Pchelyakov, OP
Citation: Av. Dvurechensky et al., Hole energy spectrum in Ge self-assembled quantum dots in Si, IAN FIZ, 63(2), 1999, pp. 307-311
Charging dynamics and electronic structure of excited state in Ge self-assembled quantum dots
Authors: Yakimov, AI Dvurechenskii, AV Nikiforov, AI Pchelyakov, OP
Citation: Ai. Yakimov et al., Charging dynamics and electronic structure of excited state in Ge self-assembled quantum dots, PHYS LOW-D, 3-4, 1999, pp. 99-109
RHEED oscillations during the MBE process under the coexistence of step flow and two-dimensional nucleation growth modes
Authors: Neizvestnyi, IG Nikiforov, AI Pchelyakov, OP Sokolov, LV Shwartz, NL Yanovitskaya, ZS
Citation: Ig. Neizvestnyi et al., RHEED oscillations during the MBE process under the coexistence of step flow and two-dimensional nucleation growth modes, PHYS LOW-D, 1-2, 1999, pp. 81-96
Hopping conduction and field effect in Si modulation-doped structures withembedded Ge quantum dots
Authors: Biskupski, G Adkins, CJ Boucher, R Dvurechenskii, AV Nikiforov, AI Pchelyakov, OP Biskupski, G
Citation: G. Biskupski et al., Hopping conduction and field effect in Si modulation-doped structures withembedded Ge quantum dots, PHYS REV B, 59(19), 1999, pp. 12598-12603
Surface structure transitions on (001) GaAs during MBE
Authors: Preobrazhenskii, VV Putyato, MA Pchelyakov, OP Semyagin, BR
Citation: Vv. Preobrazhenskii et al., Surface structure transitions on (001) GaAs during MBE, J CRYST GR, 202, 1999, pp. 166-169
Experimental determination of the incorporation factor of As-4 during molecular beam epitaxy of GaAs
Authors: Preobrazhenskii, VV Putyato, MA Pchelyakov, OP Semyagin, BR
Citation: Vv. Preobrazhenskii et al., Experimental determination of the incorporation factor of As-4 during molecular beam epitaxy of GaAs, J CRYST GR, 202, 1999, pp. 170-173
Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(001)
Authors: Gutakovsky, AK Katkov, AV Katkov, MI Pchelyakov, OP Revenko, MA
Citation: Ak. Gutakovsky et al., Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(001), J CRYST GR, 202, 1999, pp. 232-235
GeSi films with reduced dislocation density grown by molecular-beam epitaxy on compliant substrates based on porous silicon
Authors: Romanov, SI Mashanov, VI Sokolov, LV Gutakovskii, A Pchelyakov, OP
Citation: Si. Romanov et al., GeSi films with reduced dislocation density grown by molecular-beam epitaxy on compliant substrates based on porous silicon, APPL PHYS L, 75(26), 1999, pp. 4118-4120
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