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Results: 1-21 |
Results: 21
Material quality improvements for high voltage 4H-SiC diodes
Authors: Kalinina, E Kossov, V Shchukarev, A Bratus, V Pensl, G Rendakova, S Dmitriev, V Hallen, A
Citation: E. Kalinina et al., Material quality improvements for high voltage 4H-SiC diodes, MAT SCI E B, 80(1-3), 2001, pp. 337-341
Isotope-disorder-induced line broadening of phonons in the raman spectra of SiC
Authors: Rohmfeld, S Hundhausen, M Ley, L Schulze, N Pensl, G
Citation: S. Rohmfeld et al., Isotope-disorder-induced line broadening of phonons in the raman spectra of SiC, PHYS REV L, 86(5), 2001, pp. 826-829
Vacancies and deep levels in electron-irradiated 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopy
Authors: Kawasuso, A Redmann, F Krause-Rehberg, R Frank, T Weidner, M Pensl, G Sperr, P Itoh, H
Citation: A. Kawasuso et al., Vacancies and deep levels in electron-irradiated 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopy, J APPL PHYS, 90(7), 2001, pp. 3377-3382
Structural, electrical, and optical properties of low-doped 4H-SiC chemical vapor deposited epitaxial layers
Authors: Kalinina, E Kholujanov, G Zubrilov, A Solov'ev, V Davydov, D Tregubova, A Sheglov, M Kovarskii, A Yagovkina, M Violina, G Pensl, G Hallen, A Konstantinov, A Karlsson, S Rendakova, S Dmitriev, V
Citation: E. Kalinina et al., Structural, electrical, and optical properties of low-doped 4H-SiC chemical vapor deposited epitaxial layers, J APPL PHYS, 90(10), 2001, pp. 5402-5409
Annealing behavior of vacancies and Z(1/2) levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopy
Authors: Kawasuso, A Redmann, F Krause-Rehberg, R Weidner, M Frank, T Pensl, G Sperr, P Triftshauser, W Itoh, H
Citation: A. Kawasuso et al., Annealing behavior of vacancies and Z(1/2) levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopy, APPL PHYS L, 79(24), 2001, pp. 3950-3952
Comment on "Reduction of interface-state density in 4H-SiC n-type metal-oxide-semiconductor structures using high-temperature hydrogen annealing" [Appl. Phys, Lett. 76, 1585 (2000)]
Authors: Afanas'eva, VV Stesmans, A Bassler, M Pensl, G Schulz, MJ
Citation: Vv. Afanas'Eva et al., Comment on "Reduction of interface-state density in 4H-SiC n-type metal-oxide-semiconductor structures using high-temperature hydrogen annealing" [Appl. Phys, Lett. 76, 1585 (2000)], APPL PHYS L, 78(25), 2001, pp. 4043-4044
Formation and annihilation of oxygen donors in multicrystalline silicon for solar cells
Authors: Hassler, C Hofs, HU Koch, W Stollwerck, G Muller, A Karg, D Pensl, G
Citation: C. Hassler et al., Formation and annihilation of oxygen donors in multicrystalline silicon for solar cells, MAT SCI E B, 71, 2000, pp. 39-46
Oxygen-related defect centers in solar-grade, multicrystalline silicon. A reservoir of lifetime killers
Authors: Karg, D Pensl, G Schulz, M Hassler, C Koch, W
Citation: D. Karg et al., Oxygen-related defect centers in solar-grade, multicrystalline silicon. A reservoir of lifetime killers, PHYS ST S-B, 222(1), 2000, pp. 379-387
Controlled growth of 15R-SiC single crystals by the modified Lely method
Authors: Schulze, N Barrett, D Pensl, G
Citation: N. Schulze et al., Controlled growth of 15R-SiC single crystals by the modified Lely method, PHYS ST S-A, 178(2), 2000, pp. 645-650
Theory of the anisotropy of the electron Hall mobility in n-type 4H-and 6H-SiC
Authors: Iwata, H Itoh, KM Pensl, G
Citation: H. Iwata et al., Theory of the anisotropy of the electron Hall mobility in n-type 4H-and 6H-SiC, J APPL PHYS, 88(4), 2000, pp. 1956-1961
Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams
Authors: Uedono, A Tanigawa, S Ohshima, T Itoh, H Yoshikawa, M Nashiyama, I Frank, T Pensl, G Suzuki, R Ohdaira, T Mikado, T
Citation: A. Uedono et al., Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams, J APPL PHYS, 87(9), 2000, pp. 4119-4125
Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism
Authors: Bracht, H Stolwijk, NA Laube, M Pensl, G
Citation: H. Bracht et al., Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism, APPL PHYS L, 77(20), 2000, pp. 3188-3190
Shallow electron traps at the 4H-SiC/SiO2 interface
Authors: Afanas'ev, VV Stesmans, A Bassler, M Pensl, G Schulz, MJ
Citation: Vv. Afanas'Ev et al., Shallow electron traps at the 4H-SiC/SiO2 interface, APPL PHYS L, 76(3), 2000, pp. 336-338
Near-thermal equilibrium growth of SiC by physical vapor transport
Authors: Schulze, N Barrett, DL Pensl, G Rohmfeld, S Hundhausen, M
Citation: N. Schulze et al., Near-thermal equilibrium growth of SiC by physical vapor transport, MAT SCI E B, 61-2, 1999, pp. 44-47
Oxygen in silicon carbide: shallow donors and deep accepters
Authors: Dalibor, T Trageser, H Pensl, G Kimoto, T Matsunami, H Nizhner, D Shigiltchoff, O Choyke, WJ
Citation: T. Dalibor et al., Oxygen in silicon carbide: shallow donors and deep accepters, MAT SCI E B, 61-2, 1999, pp. 454-459
Long-time constant-capacitance DLTS investigations of 6H SiC/MOS structures: comparison of dry and wet oxidation
Authors: Bassler, M Pensl, G
Citation: M. Bassler et G. Pensl, Long-time constant-capacitance DLTS investigations of 6H SiC/MOS structures: comparison of dry and wet oxidation, MAT SCI E B, 61-2, 1999, pp. 490-492
Degradation of 6H-SiC MOS capacitors operated at high temperatures
Authors: Bassler, M Afanas'ev, VV Pensl, G Schulz, M
Citation: M. Bassler et al., Degradation of 6H-SiC MOS capacitors operated at high temperatures, MICROEL ENG, 48(1-4), 1999, pp. 257-260
Theory of the electron mobility in n-type 6H-SiC
Authors: Kinoshita, T Itoh, KM Schadt, M Pensl, G
Citation: T. Kinoshita et al., Theory of the electron mobility in n-type 6H-SiC, J APPL PHYS, 85(12), 1999, pp. 8193-8198
SiC/SiO2 interface-state generation by electron injection
Authors: Afanas'ev, VV Stesmans, A Bassler, M Pensl, G Schulz, MJ Harris, CI
Citation: Vv. Afanas'Ev et al., SiC/SiO2 interface-state generation by electron injection, J APPL PHYS, 85(12), 1999, pp. 8292-8298
Suppressed diffusion of implanted boron in 4H-SiC
Authors: Laube, M Pensl, G Itoh, H
Citation: M. Laube et al., Suppressed diffusion of implanted boron in 4H-SiC, APPL PHYS L, 74(16), 1999, pp. 2292-2294
Annihilation studies of oxygen-related new donors in Cz-Si
Authors: Karg, D Voigt, A Pensl, G Schulz, M Strunk, HP Zulehner, W
Citation: D. Karg et al., Annihilation studies of oxygen-related new donors in Cz-Si, PHYS ST S-B, 210(2), 1998, pp. 533-537
Risultati: 1-21 |