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Results:
1-8
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Results: 8
Authors:
Zhou, L
Khan, F
Ping, AT
Osinski, A
Adesida, I
Citation: L. Zhou et al., Characteristics of Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices, MRS I J N S, 5, 2000, pp. NIL_442-NIL_447
Authors:
Ping, AT
Piner, E
Redwing, J
Khan, MA
Adesida, I
Citation: At. Ping et al., Microwave noise performance of AlGaN/GaN HEMTs, ELECTR LETT, 36(2), 2000, pp. 175-176
Authors:
Zhou, L
Ping, AT
Khan, F
Osinsky, A
Adesida, I
Citation: L. Zhou et al., Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices, ELECTR LETT, 36(1), 2000, pp. 91-93
Authors:
Zhou, L
Lanford, W
Ping, AT
Adesida, I
Yang, JW
Khan, A
Citation: L. Zhou et al., Low resistance Ti/Pt/Au ohmic contacts to p-type GaN, APPL PHYS L, 76(23), 2000, pp. 3451-3453
Authors:
Khan, FA
Zhou, L
Ping, AT
Adesida, I
Citation: Fa. Khan et al., Inductively coupled plasma reactive ion etching of AlxGa1-xN for application in laser facet formation, J VAC SCI B, 17(6), 1999, pp. 2750-2754
Authors:
Chen, Q
Yang, JW
Blasingame, M
Faber, C
Ping, AT
Adesida, I
Citation: Q. Chen et al., Microwave electronics device applications of AlGaN GaN heterostructures, MAT SCI E B, 59(1-3), 1999, pp. 395-400
Authors:
Zhou, L
Ping, AT
Boutros, K
Redwing, J
Adesida, I
Citation: L. Zhou et al., Characterisation of rhenium Schottky contacts on n-type AlxGa1-xN, ELECTR LETT, 35(9), 1999, pp. 745-746
Authors:
Ping, AT
Selvanathan, D
Youtsey, C
Piner, E
Redwing, J
Adesida, I
Citation: At. Ping et al., Gate recessing of GaN MESFETs using photoelectrochemical wet etching, ELECTR LETT, 35(24), 1999, pp. 2140-2141
Risultati:
1-8
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