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Results: 1-25/44
Authors:
Strassburg, M
Schulz, O
Pohl, UW
Bimberg, D
Itoh, S
Nakano, K
Ishibashi, A
Klude, M
Hommel, D
Citation: M. Strassburg et al., A novel approach for improved green-emitting II-VI lasers, IEEE S T QU, 7(2), 2001, pp. 371-375
Authors:
McKay, HA
Feenstra, RM
Schmidtling, T
Pohl, UW
Geisz, JF
Citation: Ha. Mckay et al., Distribution of nitrogen atoms in dilute GaAsN and InGaAsN alloys studied by scanning tunneling microscopy, J VAC SCI B, 19(4), 2001, pp. 1644-1649
Authors:
Turck, V
Rodt, S
Heitz, R
Strassburg, M
Pohl, UW
Bimberg, D
Citation: V. Turck et al., Time-resolved spectroscopy of single quantum dots: Evidence for phonon-assisted carrier feeding, PHYS ST S-B, 224(3), 2001, pp. 643-647
Authors:
Wagner, HP
Tranitz, HP
Schuster, R
Engelhardt, R
Pohl, UW
Bimberg, D
Citation: Hp. Wagner et al., Thermal activation and phase relaxation of excitons in CdSe/ZnSSe quantum island structures, PHYS ST S-B, 224(1), 2001, pp. 195-199
Authors:
Turck, V
Rodt, S
Heitz, R
Stier, O
Strassburg, M
Pohl, UW
Bimberg, D
Citation: V. Turck et al., Charged excitons and biexcitons in self-organized CdSe quantum dots, PHYS ST S-B, 224(1), 2001, pp. 217-221
Authors:
Pohl, UW
Knorr, K
Blasing, J
Citation: Uw. Pohl et al., Metalorganic vapor phase epitaxy of GaN on LiGaO2 substrates using tertiarybutylhydrazine, PHYS ST S-A, 184(1), 2001, pp. 117-120
Authors:
Becze-Deak, T
Bottyan, L
Bonville, P
Nagy, DL
Molnar, B
Pohl, UW
Spiering, H
Citation: T. Becze-deak et al., Comparative Mossbauer spectroscopic study of iron impurities in ZnSe, J PHYS CH S, 62(5), 2001, pp. 987-997
Authors:
Kontos, AG
Chrysanthakopoulos, N
Calamiotou, M
Kehagias, T
Komninou, P
Pohl, UW
Citation: Ag. Kontos et al., Structural properties of ZnSe epilayers on (111) GaAs, J APPL PHYS, 90(7), 2001, pp. 3301-3307
Authors:
Muller-Kirsch, L
Heitz, R
Pohl, UW
Bimberg, D
Hausler, I
Kirmse, H
Neumann, W
Citation: L. Muller-kirsch et al., Temporal evolution of GaSb/GaAs quantum dot formation, APPL PHYS L, 79(7), 2001, pp. 1027-1029
Authors:
McKay, HA
Feenstra, RM
Schmidtling, T
Pohl, UW
Citation: Ha. Mckay et al., Arrangement of nitrogen atoms in GaAsN alloys determined by scanning tunneling microscopy, APPL PHYS L, 78(1), 2001, pp. 82-84
Authors:
Turck, V
Rodt, S
Stier, O
Heitz, R
Engelhardt, R
Pohl, UW
Bimberg, D
Steingruber, R
Citation: V. Turck et al., Effect of random field fluctuations on excitonic transitions of individualCdSe quantum dots, PHYS REV B, 61(15), 2000, pp. 9944-9947
Authors:
Schmidtling, T
Klein, M
Pohl, UW
Richter, W
Citation: T. Schmidtling et al., Metal organic vapor phase epitaxy of GaAsN/GaAs quantum wells using tertiarybutylhydrazine, MRS I J N S, 5, 2000, pp. NIL_197-NIL_203
Authors:
Becze-Deak, T
Bottyan, L
Nagy, DL
Pohl, UW
Spiering, H
Citation: T. Becze-deak et al., On the applicability of the model of competing acceptors to Fe1+ in Co-57 : ZnSe, HYPER INTER, 126(1-4), 2000, pp. 115-119
Authors:
Ledentsov, NN
Krestnikov, IL
Strassburg, M
Engelhardt, R
Rodt, S
Heitz, R
Pohl, UW
Hoffmann, A
Bimberg, D
Sakharov, AV
Lundin, WV
Usikov, AS
Alferov, ZI
Litvinov, D
Rosenauer, A
Gerthsen, D
Citation: Nn. Ledentsov et al., Quantum dots formed by ultrathin insertions in wide-gap matrices, THIN SOL FI, 367(1-2), 2000, pp. 40-47
Authors:
Meyne, C
Gensch, M
Peters, S
Pohl, UW
Zettler, JT
Richter, W
Citation: C. Meyne et al., In situ monitoring of ZnS/GaP and ZnSe/GaAs metalorganic vapor phase epitaxy using reflectance anisotropy spectroscopy and spectroscopic ellipsometry, THIN SOL FI, 364(1-2), 2000, pp. 12-15
Authors:
Schulz, O
Strassburg, M
Pohl, UW
Bimberg, D
Itoh, S
Nakano, K
Ishibashi, A
Klude, M
Hommel, D
Citation: O. Schulz et al., Optimised implantation-induced disordering for lowering the threshold current density of II-VI laser diodes, PHYS ST S-A, 180(1), 2000, pp. 213-216
Authors:
Strassburg, M
Dworzak, M
Hoffmann, A
Heitz, R
Pohl, UW
Bimberg, D
Litvinov, D
Rosenauer, A
Gerthsen, D
Kudryashov, I
Lischka, K
Schikora, D
Citation: M. Strassburg et al., Resonant gain in ZnSe structures with stacked CdSe islands grown in Stranski-Krastanov mode, PHYS ST S-A, 180(1), 2000, pp. 281-285
Authors:
Turck, V
Rodt, S
Stier, O
Heitz, R
Pohl, UW
Engelhardt, R
Bimberg, D
Citation: V. Turck et al., Line broadening and localization mechanisms in CdSe/ZnSe quantum dots, J LUMINESC, 87-9, 2000, pp. 337-340
Authors:
Strassburg, M
Strassburg, M
Schulz, O
Pohl, UW
Bimberg, D
Litvinov, D
Gerthsen, D
Schmidbauer, M
Schafer, P
Citation: M. Strassburg et al., ZnMgCdSe structures on InP grown by MOVPE, J CRYST GR, 221, 2000, pp. 416-420
Authors:
Sellin, R
Heinrichsdorff, F
Ribbat, C
Grundmann, M
Pohl, UW
Bimberg, D
Citation: R. Sellin et al., Surface flattening during MOCVD of thin GaAs layers covering InGaAs quantum dots, J CRYST GR, 221, 2000, pp. 581-585
Authors:
Muller-Kirsch, L
Pohl, UW
Heitz, R
Kirmse, H
Neumann, W
Bimberg, D
Citation: L. Muller-kirsch et al., Thin GaSb insertions and quantum dot formation in GaAs by MOCVD, J CRYST GR, 221, 2000, pp. 611-615
Authors:
Strassburg, M
Strassburg, M
Pohl, UW
Bimberg, D
Citation: M. Strassburg et al., Metalorganic vapor-phase epitaxy of ZnMgCdSe structures on InP, J CRYST GR, 214, 2000, pp. 115-118
Authors:
Semjonow, AJ
Pohl, UW
Citation: Aj. Semjonow et Uw. Pohl, Strain-dependent negative excitonic masses in ZnCdSe/Zn(S)Se superlattices, J CRYST GR, 214, 2000, pp. 646-650
Authors:
Pohl, UW
Strassburg, M
Strassburg, M
Krestnikov, IL
Engelhardt, R
Rodt, S
Bimberg, D
Citation: Uw. Pohl et al., CdSe/ZnSSe quantum islands grown by MOVPE on homoepitaxial GaAs buffers, J CRYST GR, 214, 2000, pp. 717-721
Authors:
Meyne, C
Pohl, UW
Richter, W
Strassburg, M
Hoffmann, A
Turck, V
Rodt, S
Bimberg, D
Gerthsen, D
Citation: C. Meyne et al., Quantum island formation in CdS/ZnS heterostructures grown by MOVPE, J CRYST GR, 214, 2000, pp. 722-726