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Results: 1-25 | 26-37
Results: 1-25/37
Contactless electromodulation and surface photovoltage spectroscopy for the nondestructive, room temperature characterization of wafer-seals III-V semiconductor device structures
Authors: Pollak, FH
Citation: Fh. Pollak, Contactless electromodulation and surface photovoltage spectroscopy for the nondestructive, room temperature characterization of wafer-seals III-V semiconductor device structures, MAT SCI E B, 80(1-3), 2001, pp. 178-183
Comment on 'modelling the optical constants of GaAs: excitonic effects at E-1, E-1+Delta(1) critical points'
Authors: Munoz, M Pollak, FH Holden, T
Citation: M. Munoz et al., Comment on 'modelling the optical constants of GaAs: excitonic effects at E-1, E-1+Delta(1) critical points', SEMIC SCI T, 16(4), 2001, pp. 281-282
Burstein-Moss shift of n-doped In0.53Ga0.47As/InP - art. no. 233302
Authors: Munoz, M Pollak, FH Kahn, M Ritter, D Kronik, L Cohen, GM
Citation: M. Munoz et al., Burstein-Moss shift of n-doped In0.53Ga0.47As/InP - art. no. 233302, PHYS REV B, 6323(23), 2001, pp. 3302
Study of semiconductor surfaces and interfaces using electromodulation
Authors: Pollak, FH
Citation: Fh. Pollak, Study of semiconductor surfaces and interfaces using electromodulation, SURF INT AN, 31(10), 2001, pp. 938-953
Temperature-dependent contactless electroreflectance and photoluminescencestudy of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures
Authors: Lin, DY Huang, YS Shou, TS Tiong, KK Pollak, FH
Citation: Dy. Lin et al., Temperature-dependent contactless electroreflectance and photoluminescencestudy of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures, J APPL PHYS, 90(12), 2001, pp. 6421-6427
Comment on "Photoreflectance study in the E-1 and E-1+Delta(1) transition regions of CdTe"
Authors: Munoz, M Pollak, FH Holden, T
Citation: M. Munoz et al., Comment on "Photoreflectance study in the E-1 and E-1+Delta(1) transition regions of CdTe", J APPL PHYS, 89(5), 2001, pp. 3070-3070
Photoreflectance characterization of an AlInAs/GaInAs heterojunction bipolar transistor structure with a chirped superlattice
Authors: Mourokh, LG Malikova, L Pollak, FH Shi, BQ Nguyen, C
Citation: Lg. Mourokh et al., Photoreflectance characterization of an AlInAs/GaInAs heterojunction bipolar transistor structure with a chirped superlattice, J APPL PHYS, 89(4), 2001, pp. 2500-2502
Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAspseudomorphic high electron mobility transistor structure
Authors: Cheng, YT Huang, YS Lin, DY Tiong, KK Pollak, FH Evans, KR
Citation: Yt. Cheng et al., Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAspseudomorphic high electron mobility transistor structure, APPL PHYS L, 79(7), 2001, pp. 949-951
Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence
Authors: Liang, JS Huang, YS Tien, CW Chang, YM Chen, CW Li, NY Li, PW Pollak, FH
Citation: Js. Liang et al., Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence, APPL PHYS L, 79(20), 2001, pp. 3227-3229
Doping dependence of the thermal conductivity of hydride vapor phase epitaxy grown n-GaN/sapphire (0001) using a scanning thermal microscope
Authors: Florescu, DI Asnin, VA Mourokh, LG Pollak, FH Molnar, RJ
Citation: Di. Florescu et al., Doping dependence of the thermal conductivity of hydride vapor phase epitaxy grown n-GaN/sapphire (0001) using a scanning thermal microscope, MRS I J N S, 5, 2000, pp. NIL_288-NIL_293
Growth and characterization of patterned ZnCdSe structures for applicationin integrated R-G-B II-VI light-emitting diodes
Authors: Luo, Y Elmoumni, A Guo, SP Tamargo, MC Kelly, S Ghaemi, H Asnin, V Tomkiewicz, M Pollak, FH Chen, YC
Citation: Y. Luo et al., Growth and characterization of patterned ZnCdSe structures for applicationin integrated R-G-B II-VI light-emitting diodes, J VAC SCI B, 18(3), 2000, pp. 1522-1525
Modulated electric fields produce semiconductor spectra
Authors: Pollak, FH
Citation: Fh. Pollak, Modulated electric fields produce semiconductor spectra, LASER FOC W, 36(7), 2000, pp. S9-S12
Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure
Authors: Malikova, L Pollak, FH Gorea, O Korotcov, A
Citation: L. Malikova et al., Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure, J ELEC MAT, 29(11), 2000, pp. 1346-1350
Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and Ga1-xInxAsySb1-y/GaSb (0.07 <= x <= 0.22, 0.05 <= y <= 0.19) quaternary alloys using infrared photoreflectance
Authors: Munoz, M Pollak, FH Zakia, MB Patel, NB Herrera-Perez, JL
Citation: M. Munoz et al., Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and Ga1-xInxAsySb1-y/GaSb (0.07 <= x <= 0.22, 0.05 <= y <= 0.19) quaternary alloys using infrared photoreflectance, PHYS REV B, 62(24), 2000, pp. 16600-16604
High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence
Authors: Florescu, DI Asnin, VM Pollak, FH Molnar, RJ Wood, CEC
Citation: Di. Florescu et al., High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence, J APPL PHYS, 88(6), 2000, pp. 3295-3300
Response to "Comment on 'Optical properties of CdTe1-xSx (0 <= x <= 1): Experiment and modeling' " [J. Appl. Phys. 88, 2172 (2000)]
Authors: Pollak, FH
Citation: Fh. Pollak, Response to "Comment on 'Optical properties of CdTe1-xSx (0 <= x <= 1): Experiment and modeling' " [J. Appl. Phys. 88, 2172 (2000)], J APPL PHYS, 88(4), 2000, pp. 2175-2176
Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation
Authors: Chen, TH Huang, YS Lin, DY Pollak, FH Goorsky, MS Streit, DC Wojtowicz, M
Citation: Th. Chen et al., Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation, J APPL PHYS, 88(2), 2000, pp. 883-888
Optical constants of Ga1-xInxAsySb1-y lattice matched to GaSb (001): Experiment and modeling
Authors: Munoz, M Wei, K Pollak, FH Freeouf, JL Wang, CA Charache, GW
Citation: M. Munoz et al., Optical constants of Ga1-xInxAsySb1-y lattice matched to GaSb (001): Experiment and modeling, J APPL PHYS, 87(4), 2000, pp. 1780-1787
Patterned three-color ZnCdSe/ZnCdMgSe quantum-well structures for integrated full-color and white light emitters
Authors: Luo, Y Guo, SP Maksimov, O Tamargo, MC Asnin, V Pollak, FH Chen, YC
Citation: Y. Luo et al., Patterned three-color ZnCdSe/ZnCdMgSe quantum-well structures for integrated full-color and white light emitters, APPL PHYS L, 77(26), 2000, pp. 4259-4261
Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy
Authors: Florescu, DI Asnin, VM Pollak, FH Jones, AM Ramer, JC Schurman, MJ Ferguson, I
Citation: Di. Florescu et al., Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy, APPL PHYS L, 77(10), 2000, pp. 1464-1466
Surface photovoltage spectroscopy, photoreflectance, and reflectivity characterization of an InGaAs/GaAs/GaAlAs vertical-cavity surface-emitting laser including temperature dependence
Authors: Huang, YS Malikova, L Pollak, FH Shen, H Pamulapati, J Newman, P
Citation: Ys. Huang et al., Surface photovoltage spectroscopy, photoreflectance, and reflectivity characterization of an InGaAs/GaAs/GaAlAs vertical-cavity surface-emitting laser including temperature dependence, APPL PHYS L, 77(1), 2000, pp. 37-39
Modeling the optical constants of diamond- and zincblende-type semiconductors: Discrete and continuum exciton effects at E-0 and E-1
Authors: Pollak, FH Munoz, M Holden, T Wei, K Asnin, VM
Citation: Fh. Pollak et al., Modeling the optical constants of diamond- and zincblende-type semiconductors: Discrete and continuum exciton effects at E-0 and E-1, PHYS ST S-B, 215(1), 1999, pp. 33-38
Band-bending effect of low temperature GaAs on a pseudomorphic modulation-doped field-effect transistor
Authors: Sun, WD Pollak, FH Folkes, PA Gumbs, G
Citation: Wd. Sun et al., Band-bending effect of low temperature GaAs on a pseudomorphic modulation-doped field-effect transistor, J ELEC MAT, 28(12), 1999, pp. L38-L41
Room-temperature phototransmittance and photoluminescence characterizationof the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles
Authors: Lin, DY Huang, YS Tiong, KK Pollak, FH Evans, KR
Citation: Dy. Lin et al., Room-temperature phototransmittance and photoluminescence characterizationof the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles, SEMIC SCI T, 14(1), 1999, pp. 103-109
Spectral ellipsometry of GaSb: Experiment and modeling
Authors: Munoz, M Wei, K Pollak, FH Freeouf, JL Charache, GW
Citation: M. Munoz et al., Spectral ellipsometry of GaSb: Experiment and modeling, PHYS REV B, 60(11), 1999, pp. 8105-8110
Risultati: 1-25 | 26-37