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Results: 1-25/32
Authors:
Daami, A
Zerrai, A
Marchand, JJ
Poortmans, J
Bremond, G
Citation: A. Daami et al., Electrical defect study in thin-film SiGe/Si solar cells, MAT SC S PR, 4(1-3), 2001, pp. 331-334
Authors:
Abouelsaood, AA
Ghannam, MY
Stalmans, L
Poortmans, J
Nijs, JF
Citation: Aa. Abouelsaood et al., Experimental testing of a random medium optical model of porous silicon for photovoltaic applications, PROG PHOTOV, 9(1), 2001, pp. 15-26
Authors:
Nijs, JF
Szlufcik, J
Poortmans, J
Sivoththaman, S
Mertens, RP
Citation: Jf. Nijs et al., Advanced cost-effective crystalline silicon solar cell technologies, SOL EN MAT, 65(1-4), 2001, pp. 249-259
Authors:
Bilyalov, R
Stalmans, L
Beaucarne, G
Loo, R
Caymax, M
Poortmans, J
Nijs, J
Citation: R. Bilyalov et al., Porous silicon as an intermediate layer for thin-film solar cell, SOL EN MAT, 65(1-4), 2001, pp. 477-485
Authors:
Bourdais, S
Beaucarne, G
Slaoui, A
Poortmans, J
Semmache, B
Dubois, C
Citation: S. Bourdais et al., Comparative study of rapid and classical thermal phosphorus diffusion on polycrystalline silicon thin films, SOL EN MAT, 65(1-4), 2001, pp. 487-493
Authors:
Sedky, S
Witvrouw, A
Saerens, A
Van Houtte, P
Poortmans, J
Baert, K
Citation: S. Sedky et al., Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400 degrees C, J MATER RES, 16(9), 2001, pp. 2607-2612
Authors:
Aernouts, T
Geens, W
Poortmans, J
Nijs, J
Mertens, R
Citation: T. Aernouts et al., Analysis and simulation of the IV-characteristics of PPV-oligomer based Schottky diodes, SYNTH METAL, 122(1), 2001, pp. 153-155
Authors:
Geens, W
Tsamouras, D
Poortmans, J
Hadziioannou, G
Citation: W. Geens et al., Field-effect mobilities in spin-cast and vacuum-deposited PPV-type pentamers, SYNTH METAL, 122(1), 2001, pp. 191-194
Authors:
Nijs, JF
Szlufcik, J
Poortmans, J
Mertens, RP
Citation: Jf. Nijs et al., Crystalline silicon based photovoltaics: Technology and market trends, MOD PHY L B, 15(17-19), 2001, pp. 571-578
Authors:
Jain, SC
Geens, W
Mehra, A
Kumar, V
Aernouts, T
Poortmans, J
Mertens, R
Willander, M
Citation: Sc. Jain et al., Injection- and space charge limited-currents in doped conducting organic materials, J APPL PHYS, 89(7), 2001, pp. 3804-3810
Authors:
Vazsonyi, E
Battistig, G
Horvath, ZE
Fried, M
Kadar, G
Paszti, F
Cantin, JL
Vanhaeren, D
Stalmans, L
Poortmans, J
Citation: E. Vazsonyi et al., Pore propagation directions in p(+) porous silicon, J POROUS MA, 7(1-3), 2000, pp. 57-61
Authors:
Stalmans, L
Poortmans, J
Bender, H
Jin, S
Conard, T
Nijs, J
Debarge, L
Slaoui, A
Citation: L. Stalmans et al., Effects of low-thermal-budget treatments on the porous Si material properties, J POROUS MA, 7(1-3), 2000, pp. 67-71
Authors:
Beaucarne, G
Bourdais, S
Slaoui, A
Poortmans, J
Citation: G. Beaucarne et al., Impurity diffusion from uncoated foreign substrates during high temperature CVD for thin-film Si solar cells, SOL EN MAT, 61(3), 2000, pp. 301-309
Authors:
Geens, W
Poortmans, J
Jain, SC
Nijs, J
Mertens, R
Veenstra, SC
Krasnikov, VV
Hadziioannou, G
Citation: W. Geens et al., Analytical study of PPV-oligomer- and C-60-based devices for optimising organic solar cells, SOL EN MAT, 61(1), 2000, pp. 43-51
Authors:
Bilyalov, RR
Ludemann, R
Wettling, W
Stalmans, L
Poortmans, J
Nijs, J
Schirone, L
Sotgiu, G
Strehlke, S
Levy-Clement, C
Citation: Rr. Bilyalov et al., Multicrystalline silicon solar cells with porous silicon emitter, SOL EN MAT, 60(4), 2000, pp. 391-420
Authors:
Agnihotri, OP
Jain, SC
Poortmans, J
Szlufcik, J
Beaucarne, G
Nijs, J
Mertens, R
Citation: Op. Agnihotri et al., Advances in low temperature processing of silicon nitride based dielectrics and their applications in surface passivation and integrated optical devices, SEMIC SCI T, 15(7), 2000, pp. R29-R40
Authors:
Solanki, CS
Bilyalov, RR
Bender, H
Poortmans, J
Citation: Cs. Solanki et al., New approach for the formation and separation of a thin porous silicon layer, PHYS ST S-A, 182(1), 2000, pp. 97-101
Authors:
Matic, Z
Bilyalov, RR
Poortmans, J
Citation: Z. Matic et al., Firing through porous silicon antireflection coating for silicon solar cells, PHYS ST S-A, 182(1), 2000, pp. 457-460
Authors:
Jin, S
Bender, H
Stalmans, L
Bilyalov, R
Poortmans, J
Loo, R
Caymax, M
Citation: S. Jin et al., Transmission electron microscopy investigation of the crystallographic quality of silicon films grown epitaxially on porous silicon, J CRYST GR, 212(1-2), 2000, pp. 119-127
Authors:
Beaucarne, G
Poortmans, J
Caymax, M
Nijs, J
Mertens, R
Citation: G. Beaucarne et al., On the behavior of p-n junction solar cells made in fine-grained silicon layers, IEEE DEVICE, 47(5), 2000, pp. 1118-1120
Authors:
Ohyama, H
Hayama, K
Hakata, T
Simoen, E
Claeys, C
Poortmans, J
Caymax, M
Takami, Y
Sunaga, H
Citation: H. Ohyama et al., Impact of high energy particle irradiation on the electrical performance of Si1-xGex epitaxial diodes, J MAT S-M E, 10(5-6), 1999, pp. 335-337
Authors:
Stalmans, L
Poortmans, J
Bender, H
Conard, T
Jin, S
Nijs, J
Mertens, R
Strehlke, S
Levy-Clement, C
Debarge, L
Slaoui, A
Citation: L. Stalmans et al., Low-thermal-budget treatments of porous silicon surface layers on crystalline Si solar cells: A way to go for improved surface passivation?, SOL EN MAT, 58(3), 1999, pp. 237-252
Authors:
Vazsonyi, E
De Clercq, K
Einhaus, R
Van Kerschaver, E
Said, K
Poortmans, J
Szlufcik, J
Nijs, J
Citation: E. Vazsonyi et al., Improved anisotropic etching process for industrial texturing of silicon solar cells, SOL EN MAT, 57(2), 1999, pp. 179-188
Authors:
Bourdais, S
Beaucarne, G
Poortmans, J
Slaoui, A
Citation: S. Bourdais et al., Electronic transport properties of polycrystalline silicon films depositedon ceramic substrates, PHYSICA B, 274, 1999, pp. 544-548
Authors:
Ohyama, H
Simoen, E
Claeys, C
Vanhellemont, J
Hayama, K
Tokuyama, J
Takami, Y
Sunaga, H
Poortmans, J
Caymax, M
Citation: H. Ohyama et al., Radiation damage in Si1-xGex heteroepitaxial devices, J RAD NUCL, 239(2), 1999, pp. 351-355