Citation: Sy. Ma et al., Comparative study on photoluminescence from Si-containing silicon oxide films and Ge-containing silicon oxide films, ACT PHY C E, 50(8), 2001, pp. 1580-1584
Authors:
Sun, WH
Zhang, JC
Dai, L
Chen, KM
Qin, GG
Citation: Wh. Sun et al., Gamma-ray irradiation effects on Fourier transform infrared grazing incidence reflection-absorption spectra of GaN films, J PHYS-COND, 13(26), 2001, pp. 5931-5936
Authors:
Zhang, JC
Chen, J
Sun, WH
Chen, KM
Tong, YZ
Yang, ZJ
Zhang, GY
Qin, GG
Citation: Jc. Zhang et al., High-resolution transmission microscope observation of both nanometer crystalline diamond and graphite in C-implanted GaN, PHYSICA B, 299(1-2), 2001, pp. 156-158
Citation: Hl. Li et al., Influence of the adsorbed Ru(II) complexes on the properties of photoluminescence from the chemically oxidized porous silicon, ACT CHIM S, 59(1), 2001, pp. 28-33
Citation: Sh. Wang et al., The electron state occupation and photoluminescence spectra from nanoscaleSi particles, PHYS LETT A, 279(3-4), 2001, pp. 261-267
Citation: Sh. Wang et al., The role of silicon oxide layers in luminescence of ensembles of silicon quantum dots, COMM TH PHY, 35(3), 2001, pp. 371-380
Citation: Y. Chen et al., Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure, NUCL INST B, 183(3-4), 2001, pp. 305-310
Citation: Gz. Ran et al., 4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures, NUCL INST B, 173(3), 2001, pp. 299-303
Citation: Sy. Ma et al., A study on photoluminescence from Si-rich silicon oxide films and Ge-containing silicon oxide films, MATER LETT, 49(2), 2001, pp. 63-68
Citation: Sy. Ma et al., Electroluminescence spectra study of Au/Si/SiO2 superlattice/p-Si structures with gamma irradiation, SURF INT AN, 32(1), 2001, pp. 98-101
Citation: Gz. Ran et al., Blue to red electroluminescence from Au/native silicon oxide/p-Si structure subjected to rapid thermal annealing, THIN SOL FI, 388(1-2), 2001, pp. 213-216
Authors:
Ran, GZ
Chen, Y
Yuan, FC
Qiao, YP
Fu, JS
Ma, ZC
Zong, WH
Qin, GG
Citation: Gz. Ran et al., An effect of Si nanoparticles on enhancing Er3+ electroluminescence in Si-rich SiO2 : Er films, SOL ST COMM, 118(11), 2001, pp. 599-602
Citation: Gz. Ran et al., Enhancing electroluminescence from Au/nanoscale Si-rich SiO2 film/p-Si by doping Al into the SiO2 film and gamma-ray irradiation, J LUMINESC, 93(1), 2001, pp. 75-80
Authors:
Ran, GZ
Chen, Y
Qin, WC
Fu, JS
Ma, ZC
Zong, WH
Lu, H
Qin, J
Qin, GG
Citation: Gz. Ran et al., Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering, J APPL PHYS, 90(11), 2001, pp. 5835-5837
Citation: Cl. Heng et al., Electroluminescence from semitransparent Au film/SiO2/(amorphous-Si/SiO2) superlattice/p-Si structure, J APPL PHYS, 89(10), 2001, pp. 5682-5686
Citation: Ds. Xu et al., Influence of supercritical and natural drying methods on structure and properties of porous silicon, CHIN SCI B, 45(9), 2000, pp. 814-818
Citation: Sh. Wang et al., Mechanism for the correlated swinging of photoluminescence intensity and peak energy shift with sizes of nanoscale Si particles, COMM TH PHY, 34(4), 2000, pp. 593-604
Citation: Ds. Xu et al., Correlation between the H+ concentration in the electrolyte and the photoluminescence of porous silicon, PHYS ST S-A, 182(1), 2000, pp. 389-394