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Results: 1-25 | 26-40
Results: 1-25/40

Authors: Ma, SY Qin, GG You, LP Wang, YY
Citation: Sy. Ma et al., Comparative study on photoluminescence from Si-containing silicon oxide films and Ge-containing silicon oxide films, ACT PHY C E, 50(8), 2001, pp. 1580-1584

Authors: Sun, WH Zhang, JC Dai, L Chen, KM Qin, GG
Citation: Wh. Sun et al., Gamma-ray irradiation effects on Fourier transform infrared grazing incidence reflection-absorption spectra of GaN films, J PHYS-COND, 13(26), 2001, pp. 5931-5936

Authors: Zhang, JC Chen, J Sun, WH Chen, KM Tong, YZ Yang, ZJ Zhang, GY Qin, GG
Citation: Jc. Zhang et al., High-resolution transmission microscope observation of both nanometer crystalline diamond and graphite in C-implanted GaN, PHYSICA B, 299(1-2), 2001, pp. 156-158

Authors: Li, HL Xu, DS Guo, GL Gui, LL Qin, GG
Citation: Hl. Li et al., Influence of the adsorbed Ru(II) complexes on the properties of photoluminescence from the chemically oxidized porous silicon, ACT CHIM S, 59(1), 2001, pp. 28-33

Authors: Wang, SH Liao, LK Qin, G Ren, SF Qin, GG
Citation: Sh. Wang et al., The electron state occupation and photoluminescence spectra from nanoscaleSi particles, PHYS LETT A, 279(3-4), 2001, pp. 261-267

Authors: Wang, SH Qin, GY Ren, SF Qin, GG
Citation: Sh. Wang et al., The role of silicon oxide layers in luminescence of ensembles of silicon quantum dots, COMM TH PHY, 35(3), 2001, pp. 371-380

Authors: Chen, Y Ran, GZ Sun, YK Wang, YB Fu, JS Chen, WT Gong, YY Wu, DX Ma, ZC Zong, WH Qin, GG
Citation: Y. Chen et al., Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure, NUCL INST B, 183(3-4), 2001, pp. 305-310

Authors: Ran, GZ Qin, WC Ma, ZC Zong, WH Qin, GG
Citation: Gz. Ran et al., 4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures, NUCL INST B, 173(3), 2001, pp. 299-303

Authors: Ma, SY Qin, GG Wang, YY
Citation: Sy. Ma et al., A study on photoluminescence from Si-rich silicon oxide films and Ge-containing silicon oxide films, MATER LETT, 49(2), 2001, pp. 63-68

Authors: Ma, SY Qin, GG Wang, YY He, DY Liu, XQ
Citation: Sy. Ma et al., Electroluminescence spectra study of Au/Si/SiO2 superlattice/p-Si structures with gamma irradiation, SURF INT AN, 32(1), 2001, pp. 98-101

Authors: Ran, GZ Fu, JS Qin, WC Zhang, BR Qiao, YP Qin, GG
Citation: Gz. Ran et al., Blue to red electroluminescence from Au/native silicon oxide/p-Si structure subjected to rapid thermal annealing, THIN SOL FI, 388(1-2), 2001, pp. 213-216

Authors: Ran, GZ Chen, Y Yuan, FC Qiao, YP Fu, JS Ma, ZC Zong, WH Qin, GG
Citation: Gz. Ran et al., An effect of Si nanoparticles on enhancing Er3+ electroluminescence in Si-rich SiO2 : Er films, SOL ST COMM, 118(11), 2001, pp. 599-602

Authors: Ran, GZ Wang, ST Fu, JS Ma, ZC Zong, WH Qin, GG
Citation: Gz. Ran et al., Enhancing electroluminescence from Au/nanoscale Si-rich SiO2 film/p-Si by doping Al into the SiO2 film and gamma-ray irradiation, J LUMINESC, 93(1), 2001, pp. 75-80

Authors: Ran, GZ Chen, Y Qin, WC Fu, JS Ma, ZC Zong, WH Lu, H Qin, J Qin, GG
Citation: Gz. Ran et al., Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering, J APPL PHYS, 90(11), 2001, pp. 5835-5837

Authors: Heng, CL Chen, Y Ma, ZC Zong, WH Qin, GG
Citation: Cl. Heng et al., Electroluminescence from semitransparent Au film/SiO2/(amorphous-Si/SiO2) superlattice/p-Si structure, J APPL PHYS, 89(10), 2001, pp. 5682-5686

Authors: Xu, DS Guo, GL Gui, LL Tang, YQ Zhang, BR Qin, GG
Citation: Ds. Xu et al., Influence of supercritical and natural drying methods on structure and properties of porous silicon, CHIN SCI B, 45(9), 2000, pp. 814-818

Authors: Sun, YK Heng, CL Wang, ST Qin, GG Ma, ZC Zong, WH
Citation: Yk. Sun et al., Electroluminesence from Au/(SiO2/Si/SiO2) nanoscale double-barrier/n(+)-Sistructure, ACT PHY C E, 49(7), 2000, pp. 1404-1408

Authors: Wang, SH Liao, LK Qin, GY Qin, GG
Citation: Sh. Wang et al., Mechanism for the correlated swinging of photoluminescence intensity and peak energy shift with sizes of nanoscale Si particles, COMM TH PHY, 34(4), 2000, pp. 593-604

Authors: Sun, WH Chen, KM Wu, K Li, CY Zhang, QL Zhou, XH Gu, ZN Qin, GG
Citation: Wh. Sun et al., Rectifying properties of solid C-60/n-GaN, C-70/n-GaN and C-70/p-GaN heterojunctions, SOL ST ELEC, 44(3), 2000, pp. 555-558

Authors: Xu, DS Guo, GL Gui, LL Tang, YQ Qin, GG
Citation: Ds. Xu et al., Optical absorption property of oxidized free-standing porous silicon films, PUR A CHEM, 72(1-2), 2000, pp. 237-243

Authors: Qin, GG Qin, G
Citation: Gg. Qin et G. Qin, Multiple mechanism model for photoluminescence from oxidized porous Si, PHYS ST S-A, 182(1), 2000, pp. 335-339

Authors: Wang, ST Xu, DS Guo, GL Qin, GG
Citation: St. Wang et al., Photoluminescence and Raman spectroscopy study on oxidized free-standing porous Si, PHYS ST S-A, 182(1), 2000, pp. 359-362

Authors: Xu, DS Guo, GL Gui, LL Tang, YQ Zhang, BR Qin, GG
Citation: Ds. Xu et al., Correlation between the H+ concentration in the electrolyte and the photoluminescence of porous silicon, PHYS ST S-A, 182(1), 2000, pp. 389-394

Authors: Li, HL Xu, DS Guo, GL Gui, LL Tang, YQ Ai, XC Sun, ZY Zhang, XK Qin, GG
Citation: Hl. Li et al., Intense and stable blue-violet emission from porous silicon modified with alkyls, J APPL PHYS, 88(7), 2000, pp. 4446-4448

Authors: Sun, WH Wang, ST Zhang, JC Chen, KM Qin, GG Tong, YZ Yang, ZJ Zhang, GY Pu, YM Zhang, QL Li, J Lin, JY Jiang, HX
Citation: Wh. Sun et al., Formation and dissolution of microcrystalline graphite in carbon-implantedGaN, J APPL PHYS, 88(10), 2000, pp. 5662-5665
Risultati: 1-25 | 26-40