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Results:
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Results: 18
Authors:
Xu, MS
Xu, JB
Tian, DX
Ji, ZG
Chen, HZ
Wang, M
Que, DL
Citation: Ms. Xu et al., Alternate heteroepitaxial growth of chloroindium phthalocyanine and chloroaluminum phthalocyanine ultrathin multilayered structure and its xerographic and optical properties, THIN SOL FI, 384(1), 2001, pp. 109-114
Authors:
Li, DS
Sumiya, M
Fuke, S
Yang, DR
Que, DL
Suzuki, Y
Fukuda, Y
Citation: Ds. Li et al., Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy, J APPL PHYS, 90(8), 2001, pp. 4219-4223
Authors:
Huang, JY
Ye, ZZ
Zhao, BH
Ma, XY
Wang, YD
Que, DL
Citation: Jy. Huang et al., Photoluminescence of Ge quantum dots prepared on porous silicon by ultrahigh vacuum chemical vapor deposition, APPL PHYS L, 78(13), 2001, pp. 1858-1860
Authors:
Li, BX
Cao, PL
Que, DL
Citation: Bx. Li et al., Distorted icosahedral cage structure of Si-60 clusters, PHYS REV B, 61(3), 2000, pp. 1685-1687
Authors:
Yang, DR
Li, LB
Ma, XY
Fan, RX
Que, DL
Moeller, HJ
Citation: Dr. Yang et al., Oxygen-related centers in multicrystalline silicon, SOL EN MAT, 62(1-2), 2000, pp. 37-42
Authors:
Yang, DR
Ma, XY
Fan, RX
Li, DS
Zhang, JX
Li, LB
Que, DL
Sumino, K
Citation: Dr. Yang et al., Infrared absorption of nitrogen-oxygen complex in silicon, MAT SCI E B, 72(2-3), 2000, pp. 121-123
Authors:
Pi, XD
Yang, DR
Ma, XY
Shui, Q
Que, DL
Citation: Xd. Pi et al., Electrical activity of nitrogen-oxygen complexes in silicon, PHYS ST S-B, 221(2), 2000, pp. 641-645
Authors:
Xu, MS
Ji, ZG
Xu, QF
Yuan, J
Que, DL
Chen, HZ
Wang, M
Citation: Ms. Xu et al., Photoconductive properties of ClAlPcCl and ClInPe composite thin film prepared by physical vapor deposition approach, THIN SOL FI, 368(2), 2000, pp. 300-302
Authors:
Liu, PD
Ma, XU
Zhang, JX
Li, LB
Que, DL
Citation: Pd. Liu et al., Evidence for the effect of carbon on oxygen precipitation in Czochralski silicon crystal, J APPL PHYS, 87(8), 2000, pp. 3669-3673
Authors:
Zhang, HX
Lu, HM
Ye, ZZ
Zhao, BH
Wang, L
Que, DL
Citation: Hx. Zhang et al., Secondary ion mass spectroscopy and photoluminescence investigations on the GaN epilayer grown on Si substrate, ACT PHY C E, 48(7), 1999, pp. 1315-1319
Authors:
Yang, DR
Ma, XY
Fan, RX
Zhang, JX
Li, LB
Que, DL
Citation: Dr. Yang et al., Oxygen precipitation in nitrogen-doped Czochralski silicon, PHYSICA B, 274, 1999, pp. 308-311
Authors:
Li, DS
Yang, DR
Que, DL
Citation: Ds. Li et al., Effects of nitrogen on dislocations in silicon during heat treatment, PHYSICA B, 274, 1999, pp. 553-556
Authors:
Yang, D
Que, DL
Citation: D. Yang et Dl. Que, Influence of dislocations on nitrogen-oxygen complex in silicon, PHYS ST S-A, 171(1), 1999, pp. 203-207
Authors:
Huang, JY
Ye, ZZ
Chen, WH
Qi, Z
Lu, HM
Lei, W
Zhao, BH
Que, DL
Citation: Jy. Huang et al., The growth and investigation of SiGe films on buried Ge islands, J CRYST GR, 206(4), 1999, pp. 294-298
Authors:
Liu, CC
Wang, HM
Li, YX
Wang, QL
Ren, BY
Xu, YS
Que, DL
Citation: Cc. Liu et al., Study on the oxygen concentration reduction in heavily Sb-doped silicon, J CRYST GR, 196(1), 1999, pp. 111-114
Authors:
Ma, XY
Zhang, SY
Li, FZ
Que, DL
Li, W
Citation: Xy. Ma et al., Preparation of bismuth substituted dysprosium iron garnet film by a sol-gel process, J MAT S-M E, 9(5), 1998, pp. 347-350
Authors:
Yang, DR
Que, DL
Sumino, K
Citation: Dr. Yang et al., Nitrogen-oxygen complexes in silicon, PHYS ST S-B, 210(2), 1998, pp. 295-299
Authors:
Ma, XY
Sha, J
Zhang, SY
Que, DL
Zhen, YX
Chen, LY
Citation: Xy. Ma et al., Bismuth- and aluminum-substituted iron garnet film, deposited by rf magnetron-sputtering using a novel target, J MAT SCI L, 17(19), 1998, pp. 1635-1636
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