Authors:
RADZIMSKI ZJ
POSADOWSKI WM
ROSSNAGEL SM
SHINGUBARA S
Citation: Zj. Radzimski et al., DIRECTIONAL COPPER DEPOSITION USING DC MAGNETRON SELF-SPUTTERING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1102-1106
Citation: Zj. Radzimski et al., OPTICAL-EMISSION SPECTROSCOPY OF HIGH-DENSITY METAL PLASMA FORMED DURING MAGNETRON SPUTTERING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 202-208
Authors:
SEKIGUCHI T
SUMINO K
RADZIMSKI ZJ
ROZGONYI GA
Citation: T. Sekiguchi et al., CATHODOLUMINESCENCE AND EBIC STUDY ON MISFIT DISLOCATIONS IN SIGE SI HETEROSTRUCTURE/, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 141-145
Authors:
KIMBALL JF
ALLEN PE
GRIFFIS DP
RADZIMSKI ZJ
RUSSELL PE
Citation: Jf. Kimball et al., SELECTIVITY VARIATIONS OF ELECTRON-BEAM PATTERNED SILICON DIOXIDE FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 2457-2461
Authors:
STARK TJ
EDENFELD KM
GRIFFIS DP
RADZIMSKI ZJ
RUSSELL PE
Citation: Tj. Stark et al., PROXIMITY EFFECTS IN LOW-ENERGY ELECTRON-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2367-2372
Authors:
RADZIMSKI ZJ
BUCZKOWSKI A
ZHOU TQ
DUBE C
ROZGONYI GA
Citation: Zj. Radzimski et al., ELECTRON-BEAM-INDUCED CURRENT STUDIES OF DEFECT-INDUCED CONDUCTIVITY INVERSION, Scanning microscopy, 7(2), 1993, pp. 513-521
Citation: Wm. Posadowski et Zj. Radzimski, SUSTAINED SELF-SPUTTERING USING A DIRECT-CURRENT MAGNETRON SOURCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(6), 1993, pp. 2980-2984
Authors:
ZHOU TQ
BUCZKOWSKI A
RADZIMSKI ZJ
ROZGONYI GA
Citation: Tq. Zhou et al., ENHANCED SURFACE-INTERFACE RECOMBINATION AND SURFACE INVERSION OF NI DECORATED SI SI(GE)/SI HETEROSTRUCTURES/, Journal of applied physics, 73(12), 1993, pp. 8412-8418
Citation: M. Kittler et al., 2 CLASSES OF RECOMBINATION BEHAVIOR AS STUDIED BY THE TECHNIQUE OF THE ELECTRON-BEAM-INDUCED CURRENT - NISI2 PARTICLES AND MISFIT DISLOCATIONS IN NI CONTAMINATED N-TYPE SILICON, Applied physics letters, 62(20), 1993, pp. 2513-2515