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Results: 1-14 |
Results: 14
FABRICATION OF MICROMECHANICAL SWITCHES FOR ROUTING RADIO-FREQUENCY SIGNALS
Authors: RANDALL JN GOLDSMITH C DENNISTON D LIN TH
Citation: Jn. Randall et al., FABRICATION OF MICROMECHANICAL SWITCHES FOR ROUTING RADIO-FREQUENCY SIGNALS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3692-3696
A PROXIMITY ION-BEAM LITHOGRAPHY PROCESS FOR HIGH-DENSITY NANOSTRUCTURES
Authors: WOLFE JC PENDHARKAR SV RUCHHOEFT P SEN S MORGAN MD HORNE WE TIBERIO RC RANDALL JN
Citation: Jc. Wolfe et al., A PROXIMITY ION-BEAM LITHOGRAPHY PROCESS FOR HIGH-DENSITY NANOSTRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3896-3899
FABRICATION OF LATERAL RESONANT-TUNNELING DEVICES WITH HETEROSTRUCTURE BARRIERS
Authors: RANDALL JN BROEKAERT TPE SMITH BD BEAMLLL EA SEABAUGH AC JOVANOVIC D
Citation: Jn. Randall et al., FABRICATION OF LATERAL RESONANT-TUNNELING DEVICES WITH HETEROSTRUCTURE BARRIERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4038-4041
ELECTRON-SPECTROSCOPIC STUDY OF VERTICAL IN1-XGAXAS QUANTUM DOTS
Authors: SLEIGHT JW HORNBECK ES DESHPANDE MR WHEELER RG REED MA BOWEN RC FRENSLEY WR RANDALL JN MATYI RJ
Citation: Jw. Sleight et al., ELECTRON-SPECTROSCOPIC STUDY OF VERTICAL IN1-XGAXAS QUANTUM DOTS, Physical review. B, Condensed matter, 53(23), 1996, pp. 15727-15737
FUNCTIONAL INP INGAAS LATERAL DOUBLE-BARRIER HETEROSTRUCTURE RESONANT-TUNNELING DIODES BY USING ETCH AND REGROWTH/
Authors: BROEKAERT TPE RANDALL JN BEAM EA JOVANOVIC D SEABAUGH AC SMITH BD
Citation: Tpe. Broekaert et al., FUNCTIONAL INP INGAAS LATERAL DOUBLE-BARRIER HETEROSTRUCTURE RESONANT-TUNNELING DIODES BY USING ETCH AND REGROWTH/, Applied physics letters, 69(13), 1996, pp. 1918-1920
REACTIVE ION ETCHING OF SILICON STENCIL MASKS IN THE PRESENCE OF AN AXIAL MAGNETIC-FIELD
Authors: PENDHARKAR SV WOLFE JC RAMPERSAD HR CHAU YL LICON DL MORGAN MD HOME WE TIBERIO RC RANDALL JN
Citation: Sv. Pendharkar et al., REACTIVE ION ETCHING OF SILICON STENCIL MASKS IN THE PRESENCE OF AN AXIAL MAGNETIC-FIELD, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2588-2592
NOVEL ELECTROSTATIC COLUMN FOR ION PROJECTION LITHOGRAPHY
Authors: CHALUPKA A STENGL G BUSCHBECK H LAMMER G VONACH H FISCHER R HAMMEL E LOSCHNER H NOWAK R WOLF P FINKELSTEIN W HILL RW BERRY IL HARRIOTT LR MELNGAILIS J RANDALL JN WOLFE JC STROH H WOLLNIK H MONDELLI AA PETILLO JJ LEUNG K
Citation: A. Chalupka et al., NOVEL ELECTROSTATIC COLUMN FOR ION PROJECTION LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3513-3517
PATTERN DISTORTIONS IN STENCIL MASKS
Authors: RANDALL JN
Citation: Jn. Randall, PATTERN DISTORTIONS IN STENCIL MASKS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3543-3546
15 NANOMETER FEATURES BY SIDEWALL PROCESSING AND PATTERN TRANSFER
Authors: RANDALL JN NEWELL BL
Citation: Jn. Randall et Bl. Newell, 15 NANOMETER FEATURES BY SIDEWALL PROCESSING AND PATTERN TRANSFER, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3631-3634
ROOM-TEMPERATURE OPERATION OF A RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR BASED INTEGRATED-CIRCUIT
Authors: MOISE TS SEABAUGH AC BEAM EA RANDALL JN
Citation: Ts. Moise et al., ROOM-TEMPERATURE OPERATION OF A RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR BASED INTEGRATED-CIRCUIT, IEEE electron device letters, 14(9), 1993, pp. 441-443
COINTEGRATION OF RESONANT-TUNNELING AND DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS ON INP
Authors: SEABAUGH AC BEAM EA TADDIKEN AH RANDALL JN KAO YC
Citation: Ac. Seabaugh et al., COINTEGRATION OF RESONANT-TUNNELING AND DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS ON INP, IEEE electron device letters, 14(10), 1993, pp. 472-474
ROOM-TEMPERATURE OPERATION OF INGAAS-BASED HOT-ELECTRON TRANSISTORS
Authors: MOISE TS SEABAUGH AC BEAM EA KAO YC RANDALL JN
Citation: Ts. Moise et al., ROOM-TEMPERATURE OPERATION OF INGAAS-BASED HOT-ELECTRON TRANSISTORS, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2134-2134
ROOM-TEMPERATURE RESONANT-TUNNELING BIPOLAR-TRANSISTOR XNOR AND XOR INTEGRATED-CIRCUITS
Authors: SEABAUGH AC TADDIKEN AH BEAM EA RANDALL JN KAO YC NEWELL B
Citation: Ac. Seabaugh et al., ROOM-TEMPERATURE RESONANT-TUNNELING BIPOLAR-TRANSISTOR XNOR AND XOR INTEGRATED-CIRCUITS, Electronics Letters, 29(20), 1993, pp. 1802-1803
SEMICONDUCTOR QUANTUM DOT RESONANT TUNNELING SPECTROSCOPY
Authors: REED MA RANDALL JN LUSCOMBE JH
Citation: Ma. Reed et al., SEMICONDUCTOR QUANTUM DOT RESONANT TUNNELING SPECTROSCOPY, Semiconductor science and technology, 7(3B), 1992, pp. 12-14
Risultati: 1-14 |