Authors: HEGDE RI MAITI B RAI RS REID KG TOBIN PJ

Citation: Ri. Hegde et al., SURFACE AND INTERFACE ROUGHNESS OF ULTRATHIN NITRIC-OXIDE OXYNITRIDE GATE DIELECTRIC, Journal of the Electrochemical Society, 145(1), 1998, pp. 13-15

Authors: MAITI B TOBIN PJ OKADA Y REID KG AJURIA SA HEGDE RI KAUSHIK V

Citation: B. Maiti et al., OXYNITRIDE GATE DIELECTRIC GROWN IN NITRIC-OXIDE (NO) - THE EFFECT OFREOXIDATION ON DIELECTRIC RELIABILITY OF THE ACTIVE EDGE, IEEE electron device letters, 17(6), 1996, pp. 279-281

Authors: REID KG SITARAM AR

Citation: Kg. Reid et Ar. Sitaram, RAPID THERMAL-PROCESSING FOR ULSI APPLICATIONS - AN OVERVIEW, Solid state technology, 39(2), 1996, pp. 63

Authors: HEGDE RI TOBIN PJ REID KG MAITI B AJURIA SA

Citation: Ri. Hegde et al., GROWTH AND SURFACE-CHEMISTRY OF OXYNITRIDE GATE DIELECTRIC USING NITRIC-OXIDE, Applied physics letters, 66(21), 1995, pp. 2882-2884

Authors: OKADA Y TOBIN PJ REID KG HEGDE RI MAITI B AJURIA SA

Citation: Y. Okada et al., FURNACE GROWN GATE OXYNITRIDE USING NITRIC-OXIDE (NO), I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1608-1613

Authors: OKADA Y TABIN PJ REID KG HEGDE RI AJURIA SA

Citation: Y. Okada et al., UNIFORMITY OF THE N2O FURNACE OXYNITRIDE PROCESS FOR THE FORMATION OFTHIN TUNNEL DIELECTRICS, Journal of the Electrochemical Society, 141(12), 1994, pp. 3500-3504