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Results: 1-11 |
Results: 11

Authors: MARRIAN CRK PERKINS FK PARK D DOBISZ EA PECKERAR MC RHEE KW BASS R
Citation: Crk. Marrian et al., MODELING OF ELECTRON ELASTIC AND INELASTIC-SCATTERING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3864-3869

Authors: BURKHARDT M SILVERMAN S SMITH HI ANTONIADIS DA RHEE KW PECKERAR MC
Citation: M. Burkhardt et al., GAP CONTROL IN THE FABRICATION OF QUANTUM-EFFECT DEVICES USING X-RAY NANOLITHOGRAPHY, Microelectronic engineering, 27(1-4), 1995, pp. 307-310

Authors: EDDY CR KOSAKOWSKI J SHIREY LM DOBISZ EA RHEE KW CHU W FOSTER KW MARRIAN CRK PECKERAR MC
Citation: Cr. Eddy et al., EFFECTS OF ETCH CHEMISTRY ON SF6-BASED TUNGSTEN ETCHING BY ELECTRON-CYCLOTRON-RESONANCE REACTIVE ION ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3351-3355

Authors: BURKHARDT M SMITH HI ANTONIADIS DA ORLANDO TP MELLOCH MR RHEE KW PECKERAR MC
Citation: M. Burkhardt et al., FABRICATION USING X-RAY NANOLITHOGRAPHY AND MEASUREMENT OF COULOMB-BLOCKADE IN A VARIABLE-SIZED QUANTUM-DOT, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3611-3613

Authors: PERKINS FK DOBISZ EA BRANDOW SL KOLOSKI TS CALVERT JM RHEE KW KOSAKOWSKI JE MARRIAN CRK
Citation: Fk. Perkins et al., PROXIMAL PROBE STUDY OF SELF-ASSEMBLED MONOLAYER RESIST MATERIALS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3725-3730

Authors: CALVERT JM CALABRESE GS BOHLAND JF CHEN MS DRESSICK WJ DULCEY CS GEORGER JH KOSAKOWSKI J PAVELCHECK EK RHEE KW SHIREY LM
Citation: Jm. Calvert et al., PHOTORESIST CHANNEL-CONSTRAINED DEPOSITION OF ELECTROLESS METALLIZATION ON LIGATING SELF-ASSEMBLED FILMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3884-3887

Authors: HECTOR SD WONG VV SMITH HI MCCORD MA RHEE KW
Citation: Sd. Hector et al., PRINTABILITY OF SUB-150 NM FEATURES IN X-RAY-LITHOGRAPHY - THEORY ANDEXPERIMENTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3965-3969

Authors: YANG IY HU H SU LT WONG VV BURKHARDT M MOON EE CARTER JM ANTONIADIS DA SMITH HI RHEE KW CHU W
Citation: Iy. Yang et al., HIGH-PERFORMANCE SELF-ALIGNED SUB-100 NM METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING X-RAY-LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 4051-4054

Authors: CHU W FOSTER KW SHIREY LM RHEE KW KOSAKOWSKI J ISAACSON IP MCCARTHY D EDDY CR DOBISZ EA MARRIAN CRK PECKERAR MC
Citation: W. Chu et al., REACTIVE ION ETCHING OF HIGH-ASPECT-RATIO 100 NM LINEWIDTH FEATURES IN TUNGSTEN, Applied physics letters, 64(16), 1994, pp. 2172-2174

Authors: GUPTA N HECTOR SD RHEE KW SMITH HI
Citation: N. Gupta et al., FABRICATION OF 100-NM T-GATES FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS USING X-RAY-LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2625-2628

Authors: DOBISZ EA MARRIAN CRK SALVINO RE ANCONA MA RHEE KW PECKERAR MC
Citation: Ea. Dobisz et al., THIN SILICON-NITRIDE FILMS TO INCREASE RESOLUTION IN E-BEAM LITHOGRAPHY, Optical engineering, 32(10), 1993, pp. 2452-2458
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