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Results: 1-25/27
Authors:
RIESZ F
DOBOS L
KARANYI J
Citation: F. Riesz et al., THERMAL-DECOMPOSITION OF BULK AND HETEROEPITAXIAL (100)INP SURFACES -A COMBINED IN-SITU SCANNING ELECTRON-MICROSCOPY AND MASS-SPECTROMETRIC STUDY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2672-2674
Authors:
ZARDAS GE
THEODOROU DE
EUTHYMIOU PC
SYMEONIDES CI
RIESZ F
SZENTPALL B
Citation: Ge. Zardas et al., ROOM-TEMPERATURE PERSISTENT PHOTOCONDUCTIVITY IN GAP-S, Solid state communications, 105(2), 1998, pp. 77-79
Authors:
AVANCI LH
HAYASHI MA
CARDOSO LP
MORELHAO SL
RIESZ F
RAKENNUS K
HAKKARAINEN T
Citation: Lh. Avanci et al., MAPPING OF BRAGG-SURFACE DIFFRACTION OF INP GAAS(100) STRUCTURE/, Journal of crystal growth, 188(1-4), 1998, pp. 220-224
Authors:
RIESZ F
VIGNALI C
PELOSI C
RAKENNUS K
HAKKARAINEN T
Citation: F. Riesz et al., AN ATOMIC-FORCE MICROSCOPY STUDY OF THE SURFACE-MORPHOLOGY OF INP GAAS HETEROEPITAXIAL LAYERS SUBJECTED TO RAPID THERMAL ANNEALING/, Journal of applied physics, 83(1), 1998, pp. 246-249
Authors:
FIGIELSKI T
WOSINSKI T
MAKOSA A
RIESZ F
Citation: T. Figielski et al., OBSERVATION OF THE COULOMB-BLOCKADE AT 77 K IN A LATTICE-MISMATCHED GAAS SI HETEROJUNCTION/, Acta Physica Polonica. A, 92(4), 1997, pp. 745-748
Authors:
RYE L
RIESZ F
Citation: L. Rye et F. Riesz, EVALUATION OF GAAS PHOTODETECTORS FOR DETECTION OF SOFT-X-RAY PULSES FROM LASER-INDUCED PLASMAS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 385(1), 1997, pp. 132-136
Authors:
DOZSA L
RIESZ F
KARANYI J
VANTUYEN V
SZENTPALI B
MULLER A
Citation: L. Dozsa et al., A TRANSIENT METHOD FOR MEASURING CURRENT-VOLTAGE CHARACTERISTICS WITHNEGATIVE DIFFERENTIAL RESISTANCE REGIONS, Physica status solidi. a, Applied research, 163(1), 1997, pp. 1-2
Authors:
SZABO J
RIESZ F
SZENTPALI B
Citation: J. Szabo et al., MAKYOH TOPOGRAPHY - CURVATURE MEASUREMENTS AND IMPLICATIONS FOR THE IMAGE-FORMATION, JPN J A P 2, 35(2B), 1996, pp. 258-261
Authors:
RIESZ F
Citation: F. Riesz, CRYSTALLOGRAPHIC TILTING IN HIGH-MISFIT (100) SEMICONDUCTOR HETEROEPITAXIAL SYSTEMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(2), 1996, pp. 425-430
Authors:
RIESZ F
KRET S
KARCZEWSKI G
WOJTOWICZ T
KOSSUT J
Citation: F. Riesz et al., STRAIN RELAXATION OF ZNTE CDTE AND CDTE/ZNTE HETEROSTRUCTURES - IN-SITU STUDY/, Acta Physica Polonica. A, 90(5), 1996, pp. 911-914
Authors:
RIESZ F
TOTH AL
Citation: F. Riesz et Al. Toth, ELECTRON-BEAM-INDUCED CURRENT STUDIES ON A PHOTOCONDUCTOR MADE OF PARTIALLY COMPENSATED GAAS, Physica status solidi. a, Applied research, 153(1), 1996, pp. 299-304
Authors:
RIESZ F
Citation: F. Riesz, CRYSTALLOGRAPHIC TILTING IN LATTICE-MISMATCHED HETEROEPITAXY - A DODSON-TSAO RELAXATION APPROACH, Journal of applied physics, 79(8), 1996, pp. 4111-4117
Authors:
RIESZ F
Citation: F. Riesz, OPTICAL GAIN IN PHOTOCONDUCTORS MADE OF COMPENSATED AND PARTIALLY COMPENSATED GAAS, Applied physics A: Materials science & processing, 60(3), 1995, pp. 299-302
Authors:
RIESZ F
VANTUYEN V
VARRIO J
Citation: F. Riesz et al., GAIN AND DARK CURRENT STUDIES ON PLANAR PHOTODETECTORS MADE ON ANNEALED GAAS-ON-SI, Acta Physica Polonica. A, 88(5), 1995, pp. 889-892
Authors:
RIESZ F
Citation: F. Riesz, GAIN STUDIES ON PHOTOCONDUCTORS MADE ON PARTLY COMPENSATED GAAS, Acta Physica Polonica. A, 87(2), 1995, pp. 373-376
Authors:
RIESZ F
Citation: F. Riesz, RESONANT TRANSMISSION IN EFFECTIVE-MASS DOUBLE-BARRIER SYSTEM, Acta Physica Polonica. A, 87(2), 1995, pp. 505-507
Authors:
MORELHAO SL
AVANCI LH
CARDOSO LP
RIESZ F
RAKENNUS K
HAKKARAINEN T
Citation: Sl. Morelhao et al., STRUCTURAL STUDIES ON INP GAAS HETEROSTRUCTURES USING MULTIPLE X-RAY-DIFFRACTION/, Vacuum, 46(8-10), 1995, pp. 1013-1015
Authors:
RIESZ F
Citation: F. Riesz, CAN EPILAYER TILT RELIEVE MISFIT STRAIN IN LATTICE-MISMATCHED HETEROSTRUCTURES, Vacuum, 46(8-10), 1995, pp. 1021-1023
Authors:
RIESZ F
Citation: F. Riesz, EFFECT OF SPATIAL-DISTRIBUTION OF ILLUMINATION INTENSITY ON THE MEASURED GAIN OF INTERDIGITATED PHOTOCONDUCTORS, Solid-state electronics, 38(6), 1995, pp. 1267-1269
Authors:
RIESZ F
VARRIO J
PESEK A
LISCHKA K
Citation: F. Riesz et al., CORRELATION BETWEEN INITIAL GROWTH PLANARITY AND EPILAYER TILTING IN THE VICINAL GAAS SI SYSTEM/, Applied surface science, 75, 1994, pp. 248-251
Authors:
RIESZ F
SERENYI M
NEMETHSALLAY M
SZENTPALI B
Citation: F. Riesz et al., THE EFFECTS OF CONTACT TYPE ON THE PROPERTIES OF SEMIINSULATING GAAS PHOTODETECTORS, Physica status solidi. a, Applied research, 143(1), 1994, pp. 110000053-110000056
Authors:
RIESZ F
Citation: F. Riesz, ROTATED TILTING IN LATTICE-MISMATCHED HETEROEPITAXIAL SYSTEMS, Journal of crystal growth, 140(1-2), 1994, pp. 213-218
Authors:
RIESZ F
Citation: F. Riesz, THE SURFACE AND INTERFACE NUCLEATION OF MISFIT DISLOCATIONS AS A POSSIBLE SOURCE OF ASYMMETRIC STRAIN RELAXATION IN VICINAL HETEROSTRUCTURES (VOL 44, PG 131, 1994), Czechoslovak journal of Physics, 44(8), 1994, pp. 799-799
Authors:
RIESZ F
Citation: F. Riesz, THE SURFACE AND INTERFACE NUCLEATION OF MISFIT DISLOCATIONS AS A POSSIBLE SOURCE OF ASYMMETRIC STRAIN RELAXATION IN VICINAL HETEROSTRUCTURES, Czechoslovak journal of Physics, 44(2), 1994, pp. 131-137
Authors:
RIESZ F
Citation: F. Riesz, MISORIENTATION IN GAAS ON SI GROWN BY MIGRATION-ENHANCED EPITAXY - COMMENTS, JPN J A P 1, 32(10), 1993, pp. 4754-4755