ACNP - Italian Periodicals Catalogue

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Results: 1-25 | 26-32

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STIMULATION OF POLARITON PHOTOLUMINESCENCE IN SEMICONDUCTOR MICROCAVITY

Authors: DANG LS HEGER D ANDRE R BOEUF F ROMESTAIN R

Citation: Ls. Dang et al., STIMULATION OF POLARITON PHOTOLUMINESCENCE IN SEMICONDUCTOR MICROCAVITY, Physical review letters, 81(18), 1998, pp. 3920-3923

COMMENT ON ABSENCE OF CARRIER HOPPING IN POROUS SILICON - REPLY

Authors: MIHALCESCU I VIAL JC ROMESTAIN R

Citation: I. Mihalcescu et al., COMMENT ON ABSENCE OF CARRIER HOPPING IN POROUS SILICON - REPLY, Physical review letters, 81(17), 1998, pp. 3805-3805

ABSENCE OF CARRIER HOPPING IN POROUS SILICON

Authors: MIHALCESCU I VIAL JC ROMESTAIN R

Citation: I. Mihalcescu et al., ABSENCE OF CARRIER HOPPING IN POROUS SILICON, Physical review letters, 80(15), 1998, pp. 3392-3395

TEMPERATURE EFFECT ON THE ROUGHNESS OF THE FORMATION INTERFACE OF P-TYPE POROUS SILICON

Authors: SETZU S LERONDEL G ROMESTAIN R

Citation: S. Setzu et al., TEMPERATURE EFFECT ON THE ROUGHNESS OF THE FORMATION INTERFACE OF P-TYPE POROUS SILICON, Journal of applied physics, 84(6), 1998, pp. 3129-3133

HOLOGRAPHY IN POROUS SILICON

Authors: LERONDEL G SETZU S THONISSEN M ROMESTAIN R

Citation: G. Lerondel et al., HOLOGRAPHY IN POROUS SILICON, Journal of imaging science and technology, 41(5), 1997, pp. 468-473

QUANTITATIVE-ANALYSIS OF THE LIGHT-SCATTERING EFFECT ON POROUS SILICON OPTICAL MEASUREMENTS

Authors: LERONDEL G ROMESTAIN R

Citation: G. Lerondel et R. Romestain, QUANTITATIVE-ANALYSIS OF THE LIGHT-SCATTERING EFFECT ON POROUS SILICON OPTICAL MEASUREMENTS, Thin solid films, 297(1-2), 1997, pp. 114-117

POROUS SILICON ANISOTROPY INVESTIGATED BY GUIDED LIGHT

Authors: MIHALCESCU I LERONDEL G ROMESTAIN R

Citation: I. Mihalcescu et al., POROUS SILICON ANISOTROPY INVESTIGATED BY GUIDED LIGHT, Thin solid films, 297(1-2), 1997, pp. 245-249

ROUGHNESS OF THE POROUS SILICON DISSOLUTION INTERFACE

Authors: LERONDEL G ROMESTAIN R BARRET S

Citation: G. Lerondel et al., ROUGHNESS OF THE POROUS SILICON DISSOLUTION INTERFACE, Journal of applied physics, 81(9), 1997, pp. 6171-6178

POROUS SILICON LATERAL SUPERLATTICES

Authors: LERONDEL G ROMESTAIN R VIAL JC THONISSEN M

Citation: G. Lerondel et al., POROUS SILICON LATERAL SUPERLATTICES, Applied physics letters, 71(2), 1997, pp. 196-198

ULTRAFAST IN-WELL SCREENING OF THE PIEZOELECTRIC FIELD IN (111) QUANTUM-WELLS

Authors: VANELLE E ALEXANDROU A LIKFORMAN JP BLOCK D CIBERT J ROMESTAIN R

Citation: E. Vanelle et al., ULTRAFAST IN-WELL SCREENING OF THE PIEZOELECTRIC FIELD IN (111) QUANTUM-WELLS, Physical review. B, Condensed matter, 53(24), 1996, pp. 16172-16175

LIGHT-SCATTERING FROM POROUS SILICON

Authors: LERONDEL G ROMESTAIN R MADEORE F MULLER F

Citation: G. Lerondel et al., LIGHT-SCATTERING FROM POROUS SILICON, Thin solid films, 276(1-2), 1996, pp. 80-83

CARRIER LOCALIZATION IN POROUS SILICON INVESTIGATED BY TIME-RESOLVED LUMINESCENCE ANALYSIS

Authors: MIHALCESCU I VIAL JC ROMESTAIN R

Citation: I. Mihalcescu et al., CARRIER LOCALIZATION IN POROUS SILICON INVESTIGATED BY TIME-RESOLVED LUMINESCENCE ANALYSIS, Journal of applied physics, 80(4), 1996, pp. 2404-2411

SOME NEW ASPECTS OF POROUS SILICON

Authors: FISHMAN G ROMESTAIN R

Citation: G. Fishman et R. Romestain, SOME NEW ASPECTS OF POROUS SILICON, Acta Physica Polonica. A, 87(2), 1995, pp. 285-293

SATURATION AND VOLTAGE QUENCHING OF THE POROUS SILICON LUMINESCENCE AND IMPORTANCE OF THE AUGER EFFECT

Authors: ROMESTAIN R VIAL JC MIHALCESCU I BSIESY A

Citation: R. Romestain et al., SATURATION AND VOLTAGE QUENCHING OF THE POROUS SILICON LUMINESCENCE AND IMPORTANCE OF THE AUGER EFFECT, Physica status solidi. b, Basic research, 190(1), 1995, pp. 77-84

EFFECT OF THE OXIDATION ON THE POROUS SILICON VOLTAGE TUNABLE LUMINESCENCE

Authors: BSIESY A HORY MA GASPARD F HERINO R LIGEON M MULLER F ROMESTAIN R VIAL JC

Citation: A. Bsiesy et al., EFFECT OF THE OXIDATION ON THE POROUS SILICON VOLTAGE TUNABLE LUMINESCENCE, Microelectronic engineering, 28(1-4), 1995, pp. 233-236

EXCITON S-STATES IN SEMICONDUCTOR QUANTUM-WELLS IN A MAGNETIC-FIELD

Authors: PEYLA P ROMESTAIN R DAUBIGNE YM FISHMAN G WASIELA A MARIETTE H

Citation: P. Peyla et al., EXCITON S-STATES IN SEMICONDUCTOR QUANTUM-WELLS IN A MAGNETIC-FIELD, Physical review. B, Condensed matter, 52(16), 1995, pp. 12026-12032

SATURATION AND VOLTAGE QUENCHING OF POROUS-SILICON LUMINESCENCE AND THE IMPORTANCE OF THE AUGER EFFECT

Authors: MIHALCESCU I VIAL JC BSIESY A MULLER F ROMESTAIN R MARTIN E DELERUE C LANNOO M ALLAN G

Citation: I. Mihalcescu et al., SATURATION AND VOLTAGE QUENCHING OF POROUS-SILICON LUMINESCENCE AND THE IMPORTANCE OF THE AUGER EFFECT, Physical review. B, Condensed matter, 51(24), 1995, pp. 17605-17613

VOLTAGE-INDUCED MODIFICATIONS OF POROUS SILICON LUMINESCENCE

Authors: BSIESY A GASPARD F HERINO R LIGEON M MULLER F ROMESTAIN R VIAL JC

Citation: A. Bsiesy et al., VOLTAGE-INDUCED MODIFICATIONS OF POROUS SILICON LUMINESCENCE, Thin solid films, 255(1-2), 1995, pp. 80-86

AUGER AND COULOMB CHARGING EFFECTS IN SEMICONDUCTOR NANOCRYSTALLITES

Authors: DELERUE C LANNOO M ALLAN G MARTIN E MIHALCESCU I VIAL JC ROMESTAIN R MULLER F BSIESY A

Citation: C. Delerue et al., AUGER AND COULOMB CHARGING EFFECTS IN SEMICONDUCTOR NANOCRYSTALLITES, Physical review letters, 75(11), 1995, pp. 2228-2231

HETEROSTRUCTURES OF SEMICONDUCTORS II-VI WITH PEIZOELECTRIC FIELD

Authors: CIBERT J VANELLE E ROMESTAIN R BLOCK D ANDRE R DANG LS LIKFORMAN JP ALEXANDROU A HULIN D

Citation: J. Cibert et al., HETEROSTRUCTURES OF SEMICONDUCTORS II-VI WITH PEIZOELECTRIC FIELD, Annales de physique, 20(5-6), 1995, pp. 557-562

EXCITONIC WAVE-FUNCTION, CORRELATION-ENERGY, EXCHANGE ENERGY, AND OSCILLATOR STRENGTH IN A CUBIC QUANTUM-DOT

Authors: ROMESTAIN R FISHMAN G

Citation: R. Romestain et G. Fishman, EXCITONIC WAVE-FUNCTION, CORRELATION-ENERGY, EXCHANGE ENERGY, AND OSCILLATOR STRENGTH IN A CUBIC QUANTUM-DOT, Physical review. B, Condensed matter, 49(3), 1994, pp. 1774-1781

LIGHT-EMISSION FROM POROUS SILICON UNDER PHOTOEXCITATION AND ELECTROEXCITATION

Authors: BSIESY A VIAL JC GASPARD F HERINO R LIGEON M MIHALCESCU I MULLER F ROMESTAIN R

Citation: A. Bsiesy et al., LIGHT-EMISSION FROM POROUS SILICON UNDER PHOTOEXCITATION AND ELECTROEXCITATION, Journal of the Electrochemical Society, 141(11), 1994, pp. 3071-3076

RELATION BETWEEN POROUS SILICON PHOTOLUMINESCENCE AND ITS VOLTAGE-TUNABLE ELECTROLUMINESCENCE

Authors: BSIESY A MULLER F LIGEON M GASPARD F HERINO R ROMESTAIN R VIAL JC

Citation: A. Bsiesy et al., RELATION BETWEEN POROUS SILICON PHOTOLUMINESCENCE AND ITS VOLTAGE-TUNABLE ELECTROLUMINESCENCE, Applied physics letters, 65(26), 1994, pp. 3371-3373

CALCULATION OF EXCHANGE ENERGY IN QUANTUM DOTS - APPLICATION TO POROUS SILICON

Authors: FISHMAN G ROMESTAIN R VIAL JC

Citation: G. Fishman et al., CALCULATION OF EXCHANGE ENERGY IN QUANTUM DOTS - APPLICATION TO POROUS SILICON, Journal de physique. IV, 3(C5), 1993, pp. 355-358

BRIGHT VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON - AQUANTUM CONFINEMENT EFFECT

Authors: VIAL JC BILLAT S BSIESY A FISHMAN G GASPARD F HERINO R LIGEON M MADEORE F MIHALCESCU I MULLER F ROMESTAIN R

Citation: Jc. Vial et al., BRIGHT VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON - AQUANTUM CONFINEMENT EFFECT, Physica. B, Condensed matter, 185(1-4), 1993, pp. 593-602

Risultati: 1-25 | 26-32