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Results: 1-11 |
Results: 11
IMPACT OF FE AND CU CONTAMINATION ON THE MINORITY-CARRIER LIFETIME OFSILICON SUBSTRATES
Authors: ROTONDARO ALP HURD TQ KANIAVA A VANHELLEMONT J SIMOEN E HEYNS MM CLAEYS C
Citation: Alp. Rotondaro et al., IMPACT OF FE AND CU CONTAMINATION ON THE MINORITY-CARRIER LIFETIME OFSILICON SUBSTRATES, Journal of the Electrochemical Society, 143(9), 1996, pp. 3014-3019
PROTRUSION FORMATION AT THE EDGES OF ION-IMPLANTED REGIONS
Authors: ROTONDARO ALP BENDER H HEYNS MM CLAEYS C
Citation: Alp. Rotondaro et al., PROTRUSION FORMATION AT THE EDGES OF ION-IMPLANTED REGIONS, Journal of the Electrochemical Society, 143(6), 1996, pp. 118-120
H2O2 DECOMPOSITION AND ITS IMPACT ON SILICON SURFACE ROUGHENING AND GATE OXIDE INTEGRITY
Authors: SCHMIDT HF MEURIS M MERTENS PW ROTONDARO ALP HEYNS MM HURD TQ HATCHER Z
Citation: Hf. Schmidt et al., H2O2 DECOMPOSITION AND ITS IMPACT ON SILICON SURFACE ROUGHENING AND GATE OXIDE INTEGRITY, JPN J A P 1, 34(2B), 1995, pp. 727-731
STATIC AND LOW-FREQUENCY NOISE CHARACTERISTICS OF N(+)P JUNCTION DIODES FABRICATED IN DIFFERENT SILICON SUBSTRATES
Authors: SIMOEN E VANHELLEMONT J ROTONDARO ALP CLAEYS C
Citation: E. Simoen et al., STATIC AND LOW-FREQUENCY NOISE CHARACTERISTICS OF N(+)P JUNCTION DIODES FABRICATED IN DIFFERENT SILICON SUBSTRATES, Semiconductor science and technology, 10(7), 1995, pp. 1002-1008
RECOMBINATION ACTIVITY OF IRON-RELATED COMPLEXES IN SILICON
Authors: KANIAVA A GAUBAS E VAITKUS J VANHELLEMONT J ROTONDARO ALP
Citation: A. Kaniava et al., RECOMBINATION ACTIVITY OF IRON-RELATED COMPLEXES IN SILICON, Materials science and technology, 11(7), 1995, pp. 670-675
SENSITIVE LIGHT-SCATTERING AS A SEMIQUANTITATIVE METHOD FOR STUDYING PHOTORESIST STRIPPING
Authors: ROTONDARO ALP MEURIS M SCHMIDT HF HEYNS MM CLAEYS C HELLEMANS L SNAUWAERT J
Citation: Alp. Rotondaro et al., SENSITIVE LIGHT-SCATTERING AS A SEMIQUANTITATIVE METHOD FOR STUDYING PHOTORESIST STRIPPING, Journal of the Electrochemical Society, 142(1), 1995, pp. 211-216
RECOMBINATION ACTIVITY OF IRON-RELATED COMPLEXES IN SILICON STUDIED BY TEMPERATURE-DEPENDENT CARRIER LIFETIME MEASUREMENTS
Authors: KANIAVA A ROTONDARO ALP VANHELLEMONT J MENCZIGAR U GAUBAS E
Citation: A. Kaniava et al., RECOMBINATION ACTIVITY OF IRON-RELATED COMPLEXES IN SILICON STUDIED BY TEMPERATURE-DEPENDENT CARRIER LIFETIME MEASUREMENTS, Applied physics letters, 67(26), 1995, pp. 3930-3932
TRANSIENT EFFECTS IN ACCUMULATION-MODE P-CHANNEL SOI MOSFETS OPERATING AT 77-K
Authors: MARTINO JA ROTONDARO ALP SIMOEN E MAGNUSSON U CLAEYS C
Citation: Ja. Martino et al., TRANSIENT EFFECTS IN ACCUMULATION-MODE P-CHANNEL SOI MOSFETS OPERATING AT 77-K, I.E.E.E. transactions on electron devices, 41(4), 1994, pp. 519-523
THE KINK-RELATED EXCESS LOW-FREQUENCY NOISE IN SILICON-ON-INSULATOR MOSTS
Authors: SIMOEN E MAGNUSSON U ROTONDARO ALP CLAEYS C
Citation: E. Simoen et al., THE KINK-RELATED EXCESS LOW-FREQUENCY NOISE IN SILICON-ON-INSULATOR MOSTS, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 330-339
SIMPLE METHOD FOR THE DETERMINATION OF THE INTERFACE TRAP DENSITY AT 77-K IN FULLY DEPLETED ACCUMULATION MODE SOI MOSFETS
Authors: MARTINO JA SIMOEN E MAGNUSSON U ROTONDARO ALP CLAEYS C
Citation: Ja. Martino et al., SIMPLE METHOD FOR THE DETERMINATION OF THE INTERFACE TRAP DENSITY AT 77-K IN FULLY DEPLETED ACCUMULATION MODE SOI MOSFETS, Solid-state electronics, 36(6), 1993, pp. 827-832
A CONSISTENT EXPERIMENTAL-METHOD FOR THE EXTRACTION OF THE THRESHOLD VOLTAGE OF SOI NMOSFETS FROM ROOM DOWN TO CRYOGENIC TEMPERATURES
Authors: ROTONDARO ALP MAGNUSSON U SIMOEN E CLAEYS C
Citation: Alp. Rotondaro et al., A CONSISTENT EXPERIMENTAL-METHOD FOR THE EXTRACTION OF THE THRESHOLD VOLTAGE OF SOI NMOSFETS FROM ROOM DOWN TO CRYOGENIC TEMPERATURES, Solid-state electronics, 36(10), 1993, pp. 1465-1468
Risultati: 1-11 |