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Results: 1-25 | 26-29
Results: 1-25/29
EXTENDED DEFECTS IN WURTZITE NITRIDE SEMICONDUCTORS
Authors: POTIN V VERMAUT P RUTERANA P NOUET G
Citation: V. Potin et al., EXTENDED DEFECTS IN WURTZITE NITRIDE SEMICONDUCTORS, Journal of electronic materials, 27(4), 1998, pp. 266-275
NANOCRYSTALLINE THIN TITANIUM FILMS GROWN ON POTASSIUM-BROMIDE SINGLE-CRYSTALS
Authors: BRAISAZ T RUTERANA P NOUET G KOMNINOU P KEHAGIAS T KARAKOSTAS T POULOPOULOS P AGGELAKERIS M FLEVARIS N SERRA A
Citation: T. Braisaz et al., NANOCRYSTALLINE THIN TITANIUM FILMS GROWN ON POTASSIUM-BROMIDE SINGLE-CRYSTALS, Thin solid films, 319(1-2), 1998, pp. 140-143
THE VOLUME EXPANSION OF THE (11(2)OVER-BAR-0) PLANAR DEFECT IN 2H-GAN6H-SIC(0001)(SI) GROWN BY MBE/
Authors: VERMAUT P BERE A RUTERANA P NOUET G HAIRIE A PAUMIER E
Citation: P. Vermaut et al., THE VOLUME EXPANSION OF THE (11(2)OVER-BAR-0) PLANAR DEFECT IN 2H-GAN6H-SIC(0001)(SI) GROWN BY MBE/, Thin solid films, 319(1-2), 1998, pp. 153-156
CHEMICAL ORDERING IN WURTZITE INXGA1-XN LAYERS GROWN ON (0001)-SAPPHIRE BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: RUTERANA P NOUET G VANDERSTRICHT W MOERMAN I CONSIDINE L
Citation: P. Ruterana et al., CHEMICAL ORDERING IN WURTZITE INXGA1-XN LAYERS GROWN ON (0001)-SAPPHIRE BY METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 72(14), 1998, pp. 1742-1744
POLARITY OF EPITAXIAL LAYERS AND ((1)OVER-BAR-2(1)OVER-BAR-0) PRISMATIC DEFECTS IN GAN AND ALN GROWN ON THE (0001)(SI) SURFACE OF 6H-SIC
Authors: VERMAUT P RUTERANA P NOUET G
Citation: P. Vermaut et al., POLARITY OF EPITAXIAL LAYERS AND ((1)OVER-BAR-2(1)OVER-BAR-0) PRISMATIC DEFECTS IN GAN AND ALN GROWN ON THE (0001)(SI) SURFACE OF 6H-SIC, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 76(6), 1997, pp. 1215-1234
TWIN TIP DEFECTS RELATED TO THE NUCLEATION AND GROWTH MECHANISMS OF THE TWIN (10(1)OVER-BAR-2) IN ZINC CHARACTERIZED BY HIGH-RESOLUTION ELECTRON-MICROSCOPY
Authors: BRAISAZ T RUTERANA P NOUET G
Citation: T. Braisaz et al., TWIN TIP DEFECTS RELATED TO THE NUCLEATION AND GROWTH MECHANISMS OF THE TWIN (10(1)OVER-BAR-2) IN ZINC CHARACTERIZED BY HIGH-RESOLUTION ELECTRON-MICROSCOPY, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 76(1), 1997, pp. 63-84
INVESTIGATION OF (10(1)OVER-BAR2) TWINS IN ZN USING HIGH-RESOLUTION ELECTRON-MICROSCOPY - INTERFACIAL DEFECTS AND INTERACTIONS
Authors: BRAISAZ T RUTERANA P NOUET G POND RC
Citation: T. Braisaz et al., INVESTIGATION OF (10(1)OVER-BAR2) TWINS IN ZN USING HIGH-RESOLUTION ELECTRON-MICROSCOPY - INTERFACIAL DEFECTS AND INTERACTIONS, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 75(4), 1997, pp. 1075-1095
STRUCTURAL DEFECTS DUE TO INTERFACE STEPS AND POLYTYPISM IN III-V SEMICONDUCTING MATERIALS - A CASE-STUDY USING HIGH-RESOLUTION ELECTRON-MICROSCOPY OF THE 2H-ALN 6H-SIC INTERFACE/
Authors: VERMAUT P RUTERANA P NOUET G MORKOC H
Citation: P. Vermaut et al., STRUCTURAL DEFECTS DUE TO INTERFACE STEPS AND POLYTYPISM IN III-V SEMICONDUCTING MATERIALS - A CASE-STUDY USING HIGH-RESOLUTION ELECTRON-MICROSCOPY OF THE 2H-ALN 6H-SIC INTERFACE/, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 75(1), 1997, pp. 239-259
INITIAL-STAGES OF GROWTH OF GAN OVER (0001)AL2O3 SUBSTRATE USING MBE - A CRYSTALLOGRAPHIC ANALYSIS OF THE DEFECTS
Authors: POTIN V RUTERANA P NOUET G
Citation: V. Potin et al., INITIAL-STAGES OF GROWTH OF GAN OVER (0001)AL2O3 SUBSTRATE USING MBE - A CRYSTALLOGRAPHIC ANALYSIS OF THE DEFECTS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 29-31
THE STRUCTURE OF GAN LAYERS GROWN ON SIC AND SAPPHIRE BY MOLECULAR-BEAM EPITAXY
Authors: RUTERANA P VERMAUT P POTIN V NOUET G BOTCHKAREV A SALVADOR A MORKOC H
Citation: P. Ruterana et al., THE STRUCTURE OF GAN LAYERS GROWN ON SIC AND SAPPHIRE BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 72-75
PRISMATIC DEFECTS IN GAN GROWN ON 6H-SIC BY MOLECULAR-BEAM EPITAXY
Authors: VERMAUT P RUTERANA P NOUET G SALVADOR A MORKOC H
Citation: P. Vermaut et al., PRISMATIC DEFECTS IN GAN GROWN ON 6H-SIC BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 279-282
THE ATOMIC-STRUCTURE OF (10(1)OVER-BAR-0) INVERSION DOMAIN BOUNDARIESIN GAN SAPPHIRE LAYERS/
Authors: POTIN V RUTERANA P NOUET G
Citation: V. Potin et al., THE ATOMIC-STRUCTURE OF (10(1)OVER-BAR-0) INVERSION DOMAIN BOUNDARIESIN GAN SAPPHIRE LAYERS/, Journal of applied physics, 82(5), 1997, pp. 2176-2183
A TEM STUDY OF A COPPER RICH PHASE GROWN ON AN AL3ZR DISPERSOID IN A SPRAY FORMED AL SIC COMPOSITE/
Authors: VERMAUT P RUTERANA P
Citation: P. Vermaut et P. Ruterana, A TEM STUDY OF A COPPER RICH PHASE GROWN ON AN AL3ZR DISPERSOID IN A SPRAY FORMED AL SIC COMPOSITE/, Acta materialia, 44(6), 1996, pp. 2445-2455
HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF THE (10(1)OVER-BAR-2) TWIN AND DEFECTS ANALYSIS IN DEFORMED POLYCRYSTALLINE ALPHA-TITANIUM
Authors: BRAISAZ T RUTERANA P NOUET G SERRA A KOMNINOU P KEHAGIAS T KARAKOSTAS T
Citation: T. Braisaz et al., HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF THE (10(1)OVER-BAR-2) TWIN AND DEFECTS ANALYSIS IN DEFORMED POLYCRYSTALLINE ALPHA-TITANIUM, Philosophical magazine letters, 74(5), 1996, pp. 331-338
VISIBLE PHOTOLUMINESCENCE OF SIO2 IMPLANTED WITH CARBON AND SILICON
Authors: GARRIDO B LOPEZ M FERRE S ROMANORODRIGUEZ A PEREZRODRIGUEZ A RUTERANA P MORANTE JR
Citation: B. Garrido et al., VISIBLE PHOTOLUMINESCENCE OF SIO2 IMPLANTED WITH CARBON AND SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 101-105
STRUCTURE OF 60-DEGREES DISLOCATIONS AT THE GAAS SI INTERFACE/
Authors: VILA A CORNET A MORANTE JR RUTERANA P LOUBRADOU M BONNET R
Citation: A. Vila et al., STRUCTURE OF 60-DEGREES DISLOCATIONS AT THE GAAS SI INTERFACE/, Journal of applied physics, 79(2), 1996, pp. 676-681
THE COMPLEXITY OF THE MATRIX MICROSTRUCTURE IN SIC-FIBER-REINFORCED GLASS-CERAMIC COMPOSITES
Authors: DOREAU F MAUPAS H KERVADEC D RUTERANA P VICENS J CHERMANT JL
Citation: F. Doreau et al., THE COMPLEXITY OF THE MATRIX MICROSTRUCTURE IN SIC-FIBER-REINFORCED GLASS-CERAMIC COMPOSITES, Journal of the European Ceramic Society, 15(12), 1995, pp. 1235-1247
MAGNETIC-FIELD EFFECTS IN THE LUMINESCENCE OF V-SHAPED QUANTUM WIRES
Authors: RINALDI R GIUGNO PV CINGOLANI R ROSSI F MOLINARI E FERRARA M MARTI U MARTIN D MORIERGEMOUD F RUTERANA P REINHART F
Citation: R. Rinaldi et al., MAGNETIC-FIELD EFFECTS IN THE LUMINESCENCE OF V-SHAPED QUANTUM WIRES, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(11-12), 1995, pp. 1681-1685
ATOMIC-STRUCTURE ANALYSIS OF THE (10-(1)OVER-BAR-2) TWIN IN ZINC BY HREM AND ENERGETICAL CALCULATIONS
Authors: BRAISAZ T RUTERANA P LEBOUVIER B NOUET G
Citation: T. Braisaz et al., ATOMIC-STRUCTURE ANALYSIS OF THE (10-(1)OVER-BAR-2) TWIN IN ZINC BY HREM AND ENERGETICAL CALCULATIONS, Physica status solidi. b, Basic research, 191(2), 1995, pp. 267-281
ATOMIC CORE STRUCTURE OF LOMER DISLOCATION AT GAAS (001)SI INTERFACE/
Authors: VILA A CORNET A MORANTE JR RUTERANA P LOUBRADOU M BONNET R GONZALEZ Y GONZALEZ L
Citation: A. Vila et al., ATOMIC CORE STRUCTURE OF LOMER DISLOCATION AT GAAS (001)SI INTERFACE/, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 71(1), 1995, pp. 85-103
MICROSTRUCTURE AND EVOLUTION OF A MAGNESIUM LITHIUM ALUMINOSILICATE MATRIX COMPOSITE
Authors: RUTERANA P KERVADEC D MAUPAS H CHERMANT JL
Citation: P. Ruterana et al., MICROSTRUCTURE AND EVOLUTION OF A MAGNESIUM LITHIUM ALUMINOSILICATE MATRIX COMPOSITE, Journal of Microscopy, 177, 1995, pp. 272-278
MICROSTRUCTURE OF A SPRAY-FORMED AL SIC COMPOSITE/
Authors: VERMAUT P RUTERANA P
Citation: P. Vermaut et P. Ruterana, MICROSTRUCTURE OF A SPRAY-FORMED AL SIC COMPOSITE/, Journal of Microscopy, 177, 1995, pp. 387-398
ONE-DIMENSIONAL EXCITONS IN V-SHAPED QUANTUM WIRES
Authors: RINALDI R CINGOLANI R LEPORE M FERRARA M CATALANO IM MARTI U MARTIN D MORIERGEMOUD U RUTERANA P REINHART FK
Citation: R. Rinaldi et al., ONE-DIMENSIONAL EXCITONS IN V-SHAPED QUANTUM WIRES, Superlattices and microstructures, 16(3), 1994, pp. 217-220
HIGH-ELECTRON-MOBILITY IN (INAS)N(GAAS)N SHORT-PERIOD SUPERLATTICES GROWN BY MOVPE FOR HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURE
Authors: ANDRE JP DESWARTE A LUGAGNEDELPON E VOISIN P RUTERANA P
Citation: Jp. Andre et al., HIGH-ELECTRON-MOBILITY IN (INAS)N(GAAS)N SHORT-PERIOD SUPERLATTICES GROWN BY MOVPE FOR HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURE, Journal of electronic materials, 23(2), 1994, pp. 141-146
EVIDENCE OF ONE-DIMENSIONAL EXCITONS IN GAAS V-SHAPED QUANTUM WIRES
Authors: RINALDI R FERRARA M CINGOLANI R MARTI U MARTIN D MORIERGEMOUD F RUTERANA P REINHART FK
Citation: R. Rinaldi et al., EVIDENCE OF ONE-DIMENSIONAL EXCITONS IN GAAS V-SHAPED QUANTUM WIRES, Physical review. B, Condensed matter, 50(16), 1994, pp. 11795-11800
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