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Results: 1-25/31
Authors:
Makhtari, A
Raineri, V
La Via, F
Franzo, G
Frisina, F
Calcagno, L
Citation: A. Makhtari et al., Oxidation of ion implanted silicon carbide, MAT SC S PR, 4(4), 2001, pp. 345-349
Authors:
Raineri, V
Citation: V. Raineri, Papers presented at the EMRS 2000 Spring Meeting. Symposium M: Advanced Characterisation of Semiconductor Materials, MAT SC S PR, 4(1-3), 2001, pp. 1-1
Authors:
Cali, D
Camalleri, CM
Raineri, V
Citation: D. Cali et al., Surface photovoltage measurements for Cu, Ti and W determination in Si wafers, MAT SC S PR, 4(1-3), 2001, pp. 19-22
Authors:
Giannazzo, F
Raineri, V
Privitera, V
Priolo, F
Citation: F. Giannazzo et al., High-resolution scanning capacitance microscopy by angle bevelling, MAT SC S PR, 4(1-3), 2001, pp. 77-80
Authors:
Ciampolini, L
Giannazzo, F
Ciappa, M
Fichtner, W
Raineri, V
Citation: L. Ciampolini et al., Simulation of scanning capacitance microscopy measurements on micro-sectioned and bevelled n(+)-p samples, MAT SC S PR, 4(1-3), 2001, pp. 85-88
Authors:
Toth, AL
Dozsa, L
Gyulai, J
Giannazzo, F
Raineri, V
Citation: Al. Toth et al., SCTS: scanning capacitance transient spectroscopy, MAT SC S PR, 4(1-3), 2001, pp. 89-91
Authors:
Giannazzo, F
Musumeci, P
Calcagno, L
Makhtari, A
Raineri, V
Citation: F. Giannazzo et al., Carrier concentration profiles in 6H-SiC by scanning capacitance microscopy, MAT SC S PR, 4(1-3), 2001, pp. 195-199
Authors:
Dkaki, M
Calcagno, L
Makthari, AM
Raineri, V
Citation: M. Dkaki et al., Infrared spectroscopy and transmission electron microscopy of polycrystalline silicon carbide, MAT SC S PR, 4(1-3), 2001, pp. 201-204
Authors:
Misiuk, A
Bak-Misiuk, J
Antonova, IV
Raineri, V
Romano-Rodriguez, A
Bachrouri, A
Surma, HB
Ratajczak, J
Katcki, J
Adamczewska, J
Neustroev, EP
Citation: A. Misiuk et al., Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen, COMP MAT SC, 21(4), 2001, pp. 515-525
Authors:
Makhtari, A
La Via, F
Raineri, V
Calcagno, L
Frisina, F
Citation: A. Makhtari et al., Structural characterisation of titanium silicon carbide reaction, MICROEL ENG, 55(1-4), 2001, pp. 375-381
Authors:
Giri, PK
Coffa, S
Raineri, V
Privitera, V
Galvagno, G
La Ferla, A
Rimini, E
Citation: Pk. Giri et al., Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon, J APPL PHYS, 89(8), 2001, pp. 4310-4317
Authors:
Ceriola, G
Iacona, F
La Via, F
Raineri, V
Bontempi, E
Depero, LE
Citation: G. Ceriola et al., X-ray reflectivity study of the structural properties of SiO2 and SiOF thin films, J ELCHEM SO, 148(12), 2001, pp. F221-F226
Authors:
Giannazzo, F
Calcagno, L
Raineri, V
Ciampolini, L
Ciappa, M
Napolitani, E
Citation: F. Giannazzo et al., Quantitative carrier profiling in ion-implanted 6H-SiC, APPL PHYS L, 79(8), 2001, pp. 1211-1213
Authors:
Raineri, V
Giuffrida, S
Rimini, E
Citation: V. Raineri et al., In situ sensor for interstitial trapping during Si thermal oxidation usingHe implantation-induced voids, APPL PHYS L, 79(24), 2001, pp. 3959-3961
Authors:
Giannazzo, F
Priolo, F
Raineri, V
Privitera, V
Citation: F. Giannazzo et al., Two-dimensional profiling and size effects on the transient enhanced diffusion of ultralow-energy B implants in Si, APPL PHYS L, 78(5), 2001, pp. 598-600
Authors:
Makhtari, A
Raineri, V
Calcagno, L
La Via, F
Frisina, F
Foti, G
Citation: A. Makhtari et al., Enhanced oxidation of ion-damaged 6H-SiC, PHIL MAG B, 80(4), 2000, pp. 661-667
Authors:
Raineri, V
Coffa, S
Szilagyi, E
Gyulai, J
Rimini, E
Citation: V. Raineri et al., He-vacancy interactions in Si and their influence on bubble formation and evolution, PHYS REV B, 61(2), 2000, pp. 937-945
Authors:
La Via, F
Raineri, V
Grimaldi, MG
Miglio, L
Iannuzzi, M
Marabelli, F
Bocelli, S
Santucci, S
Phani, AR
Citation: F. La Via et al., Role of the substrate in the C49-C54 transformation of TiSi2, J VAC SCI B, 18(2), 2000, pp. 721-728
Authors:
Raineri, V
Lombardo, S
Citation: V. Raineri et S. Lombardo, Effective channel length and base width measurements by scanning capacitance microscopy, J VAC SCI B, 18(1), 2000, pp. 545-548
Authors:
Raineri, V
Citation: V. Raineri, Voids in silicon substrates for novel applications, MAT SCI E B, 73(1-3), 2000, pp. 47-53
Authors:
Hoelzl, R
Range, KJ
Fabry, L
Hage, J
Raineri, V
Citation: R. Hoelzl et al., Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni, MAT SCI E B, 73(1-3), 2000, pp. 95-98
Authors:
Giri, PK
Galvagno, G
La Ferla, A
Rimini, E
Coffa, S
Raineri, V
Citation: Pk. Giri et al., Formation and annealing of defects during high-temperature processing of ion-implanted epitaxial silicon: the role of dopant implants, MAT SCI E B, 71, 2000, pp. 186-191
Authors:
Raineri, V
Saggio, M
Rimini, E
Citation: V. Raineri et al., Voids in silicon by He implantation: From basic to applications, J MATER RES, 15(7), 2000, pp. 1449-1477
Authors:
Iacona, F
Casella, G
La Via, F
Lombardo, S
Raineri, V
Spoto, G
Citation: F. Iacona et al., Structural properties of fluorinated SiO2 thin films, MICROEL ENG, 50(1-4), 2000, pp. 67-74
Authors:
La Ferla, A
Galvagno, G
Giri, PK
Franzo, G
Rimini, E
Raineri, V
Gasparotto, A
Cali, D
Citation: A. La Ferla et al., Oxidation induced precipitation in Al implanted epitaxial silicon, J APPL PHYS, 88(7), 2000, pp. 3988-3992