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Results: 1-11 |
Results: 11

Authors: Stepanov, S Wang, WN Yavich, BS Bougrov, V Rebane, YT Shreter, YG
Citation: S. Stepanov et al., Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers, MRS I J N S, 6(6), 2001, pp. 1-8

Authors: Shreter, YG Rebane, YT Tarkhin, DV Barakhtin, BK Rybin, VV
Citation: Yg. Shreter et al., Kinetic mechanism of surface instability evolution during etching, corrosion, and growth of elastically stressed solids, PHYS SOL ST, 43(1), 2001, pp. 169-175

Authors: Lychakov, DV Rebane, YT
Citation: Dv. Lychakov et Yt. Rebane, Otolith regularities, HEARING RES, 143(1-2), 2000, pp. 83-102

Authors: Rebane, YT Shreter, YG Wang, WN
Citation: Yt. Rebane et al., Misfit dislocations and radiative efficiency of InxGa1-xN/GaN quantum wells, APPL SURF S, 166(1-4), 2000, pp. 300-303

Authors: Rebane, YT Shreter, YG Yavich, BS Bougrov, VE Stepanov, SI Wang, WN
Citation: Yt. Rebane et al., Light emitting diode with charge asymmetric resonance tunneling, PHYS ST S-A, 180(1), 2000, pp. 121-126

Authors: Shreter, YG Rebane, YT Wang, WN
Citation: Yg. Shreter et al., III-nitride unipolar light emitting devices, PHYS ST S-A, 180(1), 2000, pp. 307-313

Authors: Orlov, YN Rebane, YT Rebane, EN
Citation: Yn. Orlov et al., A minimal model of energetic coupling of cotransport and anion-exchange transfer mechanisms in biological membranes, BIOFIZIKA, 45(5), 2000, pp. 857-863

Authors: Shreter, YG Tarkhin, DV Khorev, SA Rebane, YT
Citation: Yg. Shreter et al., Instability of an elastically compressed silicon surface under etching, PHYS SOL ST, 41(8), 1999, pp. 1295-1297

Authors: Worschech, L Ossau, W Waag, A Landwehr, G Hilpert, U Schreiber, J Rebane, YT Shreter, YG
Citation: L. Worschech et al., Anisotropic polarization of dislocation-related luminescence in thin ZnSe films, PHYSICA B, 274, 1999, pp. 895-897

Authors: Fernandez, P Piqueras, J Urbieta, A Rebane, YT Shreter, Y
Citation: P. Fernandez et al., Deformation-induced defect levels in ZeSe crystals, SEMIC SCI T, 14(5), 1999, pp. 430-434

Authors: Rebane, YT
Citation: Yt. Rebane, Topological interaction of shallow-level centers with dislocations in semiconductors, PHYS ST S-B, 210(2), 1998, pp. 269-272
Risultati: 1-11 |