ACNP - Italian Periodicals Catalogue

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Results: 1-19 |

Results: 19

Nano-scale potential profiles of silicon particle detectors measured by atomic force microscopy

Authors: Ruzin, A Croitoru, N Lubarsky, G Rosenwaks, Y

Citation: A. Ruzin et al., Nano-scale potential profiles of silicon particle detectors measured by atomic force microscopy, NUCL INST A, 461(1-3), 2001, pp. 229-232

Anisotropic domain structure of KTiOPO4 crystals

Authors: Urenski, P Lesnykh, M Rosenwaks, Y Rosenman, G Molotskii, M

Citation: P. Urenski et al., Anisotropic domain structure of KTiOPO4 crystals, J APPL PHYS, 90(4), 2001, pp. 1950-1954

Measuring minority-carrier diffusion length using a Kelvin probe force microscope

Authors: Shikler, R Fried, N Meoded, T Rosenwaks, Y

Citation: R. Shikler et al., Measuring minority-carrier diffusion length using a Kelvin probe force microscope, PHYS REV B, 61(16), 2000, pp. 11041-11046

Characterization of quantum well structures using surface photovoltage spectroscopy

Authors: Ashkenasy, N Leibovitch, M Rosenwaks, Y Shapira, Y

Citation: N. Ashkenasy et al., Characterization of quantum well structures using surface photovoltage spectroscopy, MAT SCI E B, 74(1-3), 2000, pp. 125-132

Linker-enhanced binding of metalloporphyrins to cadmium selenide and implications for oxygen detection

Authors: Ivanisevic, A Ellis, AB Ashkenasy, G Shanzer, A Rosenwaks, Y

Citation: A. Ivanisevic et al., Linker-enhanced binding of metalloporphyrins to cadmium selenide and implications for oxygen detection, LANGMUIR, 16(20), 2000, pp. 7852-7858

Kelvin probe force microscopy using near-field optical tips

Authors: Shikler, R Rosenwaks, Y

Citation: R. Shikler et Y. Rosenwaks, Kelvin probe force microscopy using near-field optical tips, APPL SURF S, 157(4), 2000, pp. 256-262

Structural and electronic properties of optimized a-Si : H films

Authors: Lubianiker, Y Cohen, JD Lubarsky, G Rosenwaks, Y Yang, J Guha, S

Citation: Y. Lubianiker et al., Structural and electronic properties of optimized a-Si : H films, J NON-CRYST, 266, 2000, pp. 253-257

Characterization methodology for pseudomorphic high electron mobility transistors using surface photovoltage spectroscopy

Authors: Solodky, S Leibovitch, M Ashkenasy, N Hallakoun, I Rosenwaks, Y Shapira, Y

Citation: S. Solodky et al., Characterization methodology for pseudomorphic high electron mobility transistors using surface photovoltage spectroscopy, J APPL PHYS, 88(11), 2000, pp. 6775-6780

Near-field surface photovoltage

Authors: Shikler, R Rosenwaks, Y

Citation: R. Shikler et Y. Rosenwaks, Near-field surface photovoltage, APPL PHYS L, 77(6), 2000, pp. 836-838

Physical properties of a : DLC films and their dependence on parameters ofdeposition and type of substrate

Authors: Maharizi, M Segal, O Ben-Jacob, E Rosenwaks, Y Meoded, T Croitoru, N Seidman, A

Citation: M. Maharizi et al., Physical properties of a : DLC films and their dependence on parameters ofdeposition and type of substrate, DIAM RELAT, 8(6), 1999, pp. 1050-1056

Yellow luminescence and related deep levels in unintentionally doped GaN films

Authors: Shalish, I Kronik, L Segal, C Rosenwaks, Y Shapira, Y Tisch, U Salzman, J

Citation: I. Shalish et al., Yellow luminescence and related deep levels in unintentionally doped GaN films, PHYS REV B, 59(15), 1999, pp. 9748-9751

Dislocations structure investigation in neutron irradiated silicon detectors using AFM and microhardness measurements

Authors: Golan, G Rabinovich, E Inberg, A Axelevitch, A Oksman, M Rosenwaks, Y Kozlovsky, A Rancoita, PG Rattaggi, M Seidman, A Croitoru, N

Citation: G. Golan et al., Dislocations structure investigation in neutron irradiated silicon detectors using AFM and microhardness measurements, MICROEL REL, 39(10), 1999, pp. 1497-1504

Measuring hot electron temperatures in semiconductors under high injectionlevels

Authors: Poles, E Huppert, D Hanna, MC Rosenwaks, Y

Citation: E. Poles et al., Measuring hot electron temperatures in semiconductors under high injectionlevels, J APPL PHYS, 86(6), 1999, pp. 3481-3483

GaAs/AlGaAs single quantum well p-i-n structures: A surface photovoltage study

Authors: Ashkenasy, N Leibovitch, M Rosenwaks, Y Shapira, Y Barnham, KWJ Nelson, J Barnes, J

Citation: N. Ashkenasy et al., GaAs/AlGaAs single quantum well p-i-n structures: A surface photovoltage study, J APPL PHYS, 86(12), 1999, pp. 6902-6907

Two-dimensional surface band structure of operating light emitting devices

Authors: Shikler, R Meoded, T Fried, N Mishori, B Rosenwaks, Y

Citation: R. Shikler et al., Two-dimensional surface band structure of operating light emitting devices, J APPL PHYS, 86(1), 1999, pp. 107-113

Excess carriers lifetime in InP single crystals: Radiative versus nonradiative recombination

Authors: Liu, A Rosenwaks, Y

Citation: A. Liu et Y. Rosenwaks, Excess carriers lifetime in InP single crystals: Radiative versus nonradiative recombination, J APPL PHYS, 86(1), 1999, pp. 430-437

Direct measurement of minority carriers diffusion length using Kelvin probe force microscopy

Authors: Meoded, T Shikler, R Fried, N Rosenwaks, Y

Citation: T. Meoded et al., Direct measurement of minority carriers diffusion length using Kelvin probe force microscopy, APPL PHYS L, 75(16), 1999, pp. 2435-2437

Potential imaging of operating light-emitting devices using Kelvin force microscopy

Authors: Shikler, R Meoded, T Fried, N Rosenwaks, Y

Citation: R. Shikler et al., Potential imaging of operating light-emitting devices using Kelvin force microscopy, APPL PHYS L, 74(20), 1999, pp. 2972-2974

Molecular control over semiconductor surface electronic properties: Dicarboxylic acids on CdTe, CdSe, GaAs, and InP

Authors: Cohen, R Kronik, L Shanzer, A Cahen, D Liu, A Rosenwaks, Y Lorenz, JK Ellis, AB

Citation: R. Cohen et al., Molecular control over semiconductor surface electronic properties: Dicarboxylic acids on CdTe, CdSe, GaAs, and InP, J AM CHEM S, 121(45), 1999, pp. 10545-10553

Risultati: 1-19 |