Authors:
WASA K
HANEDA Y
SATO T
ADACHI H
KANNO I
SCHLOM DG
TROLIERMCKINSTRY ST
GAN Q
EOM CB
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Authors:
WASA K
HANEDA Y
SATOH T
ADACHI H
KANNO I
SETSUNE K
SCHLOM DG
TROLIERMCKINSTRY S
EOM CB
Citation: K. Wasa et al., CONTINUOUS SINGLE-CRYSTAL PBTIO3 THIN-FILMS EPITAXIALLY GROWN ON MISCUT (001)SRTIO3, Journal of the Korean Physical Society, 32, 1998, pp. 1344-1348
Authors:
MARIA JP
TROLIERMCKINSTRY S
SCHLOM DG
HAWLEY ME
BROWN GW
Citation: Jp. Maria et al., THE INFLUENCE OF ENERGETIC BOMBARDMENT ON THE STRUCTURE AND PROPERTIES OF EPITAXIAL SRRUO3 THIN-FILMS GROWN BY PULSED-LASER DEPOSITION, Journal of applied physics, 83(8), 1998, pp. 4373-4379
Authors:
CHAKOUMAKOS BC
SCHLOM DG
URBANIK M
LUINE J
Citation: Bc. Chakoumakos et al., THERMAL-EXPANSION OF LAALO3 AND (LA,SR)(AL,TA)O-3, SUBSTRATE MATERIALS FOR SUPERCONDUCTING THIN-FILM DEVICE APPLICATIONS, Journal of applied physics, 83(4), 1998, pp. 1979-1982
Authors:
LETTIERI J
JIA Y
URBANIK M
WEBER CI
MARIA JP
SCHLOM DG
LI H
RAMESH R
UECKER R
REICHE P
Citation: J. Lettieri et al., EPITAXIAL-GROWTH OF (001)-ORIENTED AND (110)-ORIENTED SRBI2TA2O9 THIN-FILMS, Applied physics letters, 73(20), 1998, pp. 2923-2925
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Authors:
MADHAVAN S
MITCHELL JA
NEMOTO T
WOZNIAK S
LIU Y
SCHLOM DG
DABKOWSKI A
DABKOWSKA HA
Citation: S. Madhavan et al., GROWTH OF EPITAXIAL SR2RUO4 FILMS AND YBA2CU3O7-DELTA SR2RUO4 HETEROSTRUCTURES/, Journal of crystal growth, 174(1-4), 1997, pp. 417-423
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SCHLOM DG
HELLMAN ES
HARTFORD EH
EOM CB
CLARK JC
MANNHART J
Citation: Dg. Schlom et al., ORIGIN OF THE PHI-APPROXIMATE-TO+ -9-DEGREES PEAKS IN YBA2CU3O7-DELTAFILMS GROWN ON CUBIC ZIRCONIA SUBSTRATES/, Journal of materials research, 11(6), 1996, pp. 1336-1348
Citation: Kj. Hubbard et Dg. Schlom, THERMODYNAMIC STABILITY OF BINARY OXIDES IN CONTACT WITH SILICON, Journal of materials research, 11(11), 1996, pp. 2757-2776
Citation: Cd. Theis et Dg. Schlom, CHEAP AND STABLE TITANIUM SOURCE FOR USE IN OXIDE MOLECULAR-BEAM EPITAXY SYSTEMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2677-2679
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