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Results: 1-25 | 26-32
Results: 1-25/32
15 000 HRS STABLE OPERATION OF RESONANT-CAVITY LIGHT-EMITTING-DIODES
Authors: SCHUBERT EF HUNT NEJ
Citation: Ef. Schubert et Nej. Hunt, 15 000 HRS STABLE OPERATION OF RESONANT-CAVITY LIGHT-EMITTING-DIODES, Applied physics A: Materials science & processing, 66(3), 1998, pp. 319-321
SPATIAL DISTRIBUTIONS OF NEAR-BAND-GAP UV AND YELLOW EMISSION ON MOCVD GROWN GAN EPIFILMS
Authors: TU LW LEE YC STOCKER D SCHUBERT EF
Citation: Lw. Tu et al., SPATIAL DISTRIBUTIONS OF NEAR-BAND-GAP UV AND YELLOW EMISSION ON MOCVD GROWN GAN EPIFILMS, Physical review. B, Condensed matter, 58(16), 1998, pp. 10696-10699
OPTICALLY PUMPED INGAN GAN DOUBLE-HETEROSTRUCTURE LASERS WITH CLEAVEDFACETS/
Authors: STOCKER D SCHUBERT EF BOUTROS KS FLYNN JS VAUDO RP PHANSE VM REDWING JM
Citation: D. Stocker et al., OPTICALLY PUMPED INGAN GAN DOUBLE-HETEROSTRUCTURE LASERS WITH CLEAVEDFACETS/, Electronics Letters, 34(4), 1998, pp. 373-375
YELLOW LUMINESCENCE DEPTH PROFILING ON GAN EPIFILMS USING REACTIVE ION ETCHING
Authors: TU LW LEE YC CHEN SJ LO I STOCKER D SCHUBERT EF
Citation: Lw. Tu et al., YELLOW LUMINESCENCE DEPTH PROFILING ON GAN EPIFILMS USING REACTIVE ION ETCHING, Applied physics letters, 73(19), 1998, pp. 2802-2804
CRYSTALLOGRAPHIC WET CHEMICAL ETCHING OF GAN
Authors: STOCKER DA SCHUBERT EF REDWING JM
Citation: Da. Stocker et al., CRYSTALLOGRAPHIC WET CHEMICAL ETCHING OF GAN, Applied physics letters, 73(18), 1998, pp. 2654-2656
FACET ROUGHNESS ANALYSIS FOR INGAN GAN LASERS WITH CLEAVED FACETS/
Authors: STOCKER DA SCHUBERT EF GRIESHABER W BOUTROS KS REDWING JM
Citation: Da. Stocker et al., FACET ROUGHNESS ANALYSIS FOR INGAN GAN LASERS WITH CLEAVED FACETS/, Applied physics letters, 73(14), 1998, pp. 1925-1927
HIGH EXTRACTION EFFICIENCY OF SPONTANEOUS EMISSION FROM SLABS OF PHOTONIC CRYSTALS
Authors: FAN SH VILLENEUVE PR JOANNOPOULOS JD SCHUBERT EF
Citation: Sh. Fan et al., HIGH EXTRACTION EFFICIENCY OF SPONTANEOUS EMISSION FROM SLABS OF PHOTONIC CRYSTALS, Physical review letters, 78(17), 1997, pp. 3294-3297
ADVANCING METAL-OXIDE-SEMICONDUCTOR THEORY - STEADY-STATE NONEQUILIBRIUM CONDITIONS
Authors: PASSLACK M HONG M SCHUBERT EF ZYDZIK GJ MANNAERTS JP HOBSON WS HARRIS TD
Citation: M. Passlack et al., ADVANCING METAL-OXIDE-SEMICONDUCTOR THEORY - STEADY-STATE NONEQUILIBRIUM CONDITIONS, Journal of applied physics, 81(11), 1997, pp. 7647-7661
OPTICAL-PROPERTIES OF SI-DOPED GAN
Authors: SCHUBERT EF GOEPFERT ID GRIESHABER W REDWING JM
Citation: Ef. Schubert et al., OPTICAL-PROPERTIES OF SI-DOPED GAN, Applied physics letters, 71(7), 1997, pp. 921-923
EVIDENCE OF COMPENSATING CENTERS AS ORIGIN OF YELLOW LUMINESCENCE IN GAN
Authors: SCHUBERT EF GOEPFERT ID REDWING JM
Citation: Ef. Schubert et al., EVIDENCE OF COMPENSATING CENTERS AS ORIGIN OF YELLOW LUMINESCENCE IN GAN, Applied physics letters, 71(22), 1997, pp. 3224-3226
BAND-GAP BOWING AND REFRACTIVE-INDEX SPECTRA OF POLYCRYSTALLINE ALXIN1-XN FILMS DEPOSITED BY SPUTTERING
Authors: PENG T PIPREK J QIU G OLOWOLAFE JO UNRUH KM SWANN CP SCHUBERT EF
Citation: T. Peng et al., BAND-GAP BOWING AND REFRACTIVE-INDEX SPECTRA OF POLYCRYSTALLINE ALXIN1-XN FILMS DEPOSITED BY SPUTTERING, Applied physics letters, 71(17), 1997, pp. 2439-2441
MICROCAVITY EFFECTS IN GAN EPITAXIAL-FILMS AND IN AG GAN/SAPPHIRE STRUCTURES/
Authors: BILLEB A GRIESHABER W STOCKER D SCHUBERT EF KARLICEK RF
Citation: A. Billeb et al., MICROCAVITY EFFECTS IN GAN EPITAXIAL-FILMS AND IN AG GAN/SAPPHIRE STRUCTURES/, Applied physics letters, 70(21), 1997, pp. 2790-2792
TEMPERATURE AND MODULATION CHARACTERISTICS OF RESONANT-CAVITY LIGHT-EMITTING-DIODES
Authors: SCHUBERT EF HUNT NEJ MALIK RJ MICOVIC M MILLER DL
Citation: Ef. Schubert et al., TEMPERATURE AND MODULATION CHARACTERISTICS OF RESONANT-CAVITY LIGHT-EMITTING-DIODES, Journal of lightwave technology, 14(7), 1996, pp. 1721-1729
COMPETITION BETWEEN BAND-GAP AND YELLOW LUMINESCENCE IN GAN AND ITS RELEVANCE FOR OPTOELECTRONIC DEVICES
Authors: GRIESHABER W SCHUBERT EF GOEPFERT ID KARLICEK RF SCHURMAN MJ TRAN C
Citation: W. Grieshaber et al., COMPETITION BETWEEN BAND-GAP AND YELLOW LUMINESCENCE IN GAN AND ITS RELEVANCE FOR OPTOELECTRONIC DEVICES, Journal of applied physics, 80(8), 1996, pp. 4615-4620
IN-VACUUM CLEAVING AND COATING OF SEMICONDUCTOR-LASER FACETS USING THIN SILICON AND A DIELECTRIC
Authors: TU LW SCHUBERT EF HONG M ZYDZIK GJ
Citation: Lw. Tu et al., IN-VACUUM CLEAVING AND COATING OF SEMICONDUCTOR-LASER FACETS USING THIN SILICON AND A DIELECTRIC, Journal of applied physics, 80(11), 1996, pp. 6448-6451
ENHANCEMENT OF DEEP ACCEPTOR ACTIVATION IN SEMICONDUCTORS BY SUPERLATTICE DOPING
Authors: SCHUBERT EF GRIESHABER W GOEPFERT ID
Citation: Ef. Schubert et al., ENHANCEMENT OF DEEP ACCEPTOR ACTIVATION IN SEMICONDUCTORS BY SUPERLATTICE DOPING, Applied physics letters, 69(24), 1996, pp. 3737-3739
INFRARED MICROSCOPY STUDIES ON HIGH-POWER INGAAS-GAAS-INGAP LASERS WITH GA2O3 FACET COATINGS
Authors: PASSLACK M BETHEA CG HOBSON WS LOPATA J SCHUBERT EF ZYDZIK GJ NICHOLS DT DEJONG JF CHAKRABARTI UK DUTTA NK
Citation: M. Passlack et al., INFRARED MICROSCOPY STUDIES ON HIGH-POWER INGAAS-GAAS-INGAP LASERS WITH GA2O3 FACET COATINGS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 110-116
EVIDENCE OF VERY STRONG INTER-EPITAXIAL-LAYER DIFFUSION IN ZN-DOPED GAINPAS INP STRUCTURES/
Authors: SCHUBERT EF DOWNEY SW PINZONE C EMERSON AB
Citation: Ef. Schubert et al., EVIDENCE OF VERY STRONG INTER-EPITAXIAL-LAYER DIFFUSION IN ZN-DOPED GAINPAS INP STRUCTURES/, Applied physics A: Materials science & processing, 60(6), 1995, pp. 525-527
GA2O3 FILMS FOR ELECTRONIC AND OPTOELECTRONIC APPLICATIONS
Authors: PASSLACK M SCHUBERT EF HOBSON WS HONG M MORIYA N CHU SNG KONSTADINIDIS K MANNAERTS JP SCHNOES ML ZYDZIK GJ
Citation: M. Passlack et al., GA2O3 FILMS FOR ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, Journal of applied physics, 77(2), 1995, pp. 686-693
PHENOMENOLOGY OF ZN DIFFUSION AND INCORPORATION IN INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY (OMVPE)
Authors: SCHUBERT EF PINZONE CJ GEVA M
Citation: Ef. Schubert et al., PHENOMENOLOGY OF ZN DIFFUSION AND INCORPORATION IN INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY (OMVPE), Applied physics letters, 67(5), 1995, pp. 700-702
IN-SITU FABRICATED GA2O3-GAAS STRUCTURES WITH LOW INTERFACE RECOMBINATION VELOCITY
Authors: PASSLACK M HONG M SCHUBERT EF KWO JR MANNAERTS JP CHU SNG MORIYA N THIEL FA
Citation: M. Passlack et al., IN-SITU FABRICATED GA2O3-GAAS STRUCTURES WITH LOW INTERFACE RECOMBINATION VELOCITY, Applied physics letters, 66(5), 1995, pp. 625-627
SUPERIOR OUTPUT LINEARITY OF OPTIMIZED DOUBLE-HETEROSTRUCTURE VERTICAL-CAVITY TOP-EMITTING LASERS
Authors: TU LW SCHUBERT EF WANG YH WEIR BE ZYDZIK GJ CHO AY
Citation: Lw. Tu et al., SUPERIOR OUTPUT LINEARITY OF OPTIMIZED DOUBLE-HETEROSTRUCTURE VERTICAL-CAVITY TOP-EMITTING LASERS, Applied physics letters, 66(18), 1995, pp. 2315-2317
HIGHLY EFFICIENT LIGHT-EMITTING-DIODES WITH MICROCAVITIES
Authors: SCHUBERT EF HUNT NEJ MICOVIC M MALIK RJ SIVCO DL CHO AY ZYDZIK GJ
Citation: Ef. Schubert et al., HIGHLY EFFICIENT LIGHT-EMITTING-DIODES WITH MICROCAVITIES, Science, 265(5174), 1994, pp. 943-945
PROPERTIES OF AL2O3 OPTICAL COATINGS ON GAAS PRODUCED BY OXIDATION OFEPITAXIAL ALAS GAAS FILMS/
Authors: SCHUBERT EF PASSLACK M HONG M MANNERTS J OPILA RL PFEIFFER LN WEST KW BETHEA CG ZYDZIK GJ
Citation: Ef. Schubert et al., PROPERTIES OF AL2O3 OPTICAL COATINGS ON GAAS PRODUCED BY OXIDATION OFEPITAXIAL ALAS GAAS FILMS/, Applied physics letters, 64(22), 1994, pp. 2976-2978
DIELECTRIC-PROPERTIES OF ELECTRON-BEAM DEPOSITED GA2O3 FILMS
Authors: PASSLACK M HUNT NEJ SCHUBERT EF ZYDZIK GJ HONG M MANNAERTS JP OPILA RL FISCHER RJ
Citation: M. Passlack et al., DIELECTRIC-PROPERTIES OF ELECTRON-BEAM DEPOSITED GA2O3 FILMS, Applied physics letters, 64(20), 1994, pp. 2715-2717
Risultati: 1-25 | 26-32