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STOCKER D
SCHUBERT EF
BOUTROS KS
FLYNN JS
VAUDO RP
PHANSE VM
REDWING JM
Citation: D. Stocker et al., OPTICALLY PUMPED INGAN GAN DOUBLE-HETEROSTRUCTURE LASERS WITH CLEAVEDFACETS/, Electronics Letters, 34(4), 1998, pp. 373-375
Authors:
TU LW
LEE YC
CHEN SJ
LO I
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Citation: Lw. Tu et al., YELLOW LUMINESCENCE DEPTH PROFILING ON GAN EPIFILMS USING REACTIVE ION ETCHING, Applied physics letters, 73(19), 1998, pp. 2802-2804
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FAN SH
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SCHUBERT EF
Citation: Sh. Fan et al., HIGH EXTRACTION EFFICIENCY OF SPONTANEOUS EMISSION FROM SLABS OF PHOTONIC CRYSTALS, Physical review letters, 78(17), 1997, pp. 3294-3297
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Citation: M. Passlack et al., ADVANCING METAL-OXIDE-SEMICONDUCTOR THEORY - STEADY-STATE NONEQUILIBRIUM CONDITIONS, Journal of applied physics, 81(11), 1997, pp. 7647-7661
Citation: Ef. Schubert et al., EVIDENCE OF COMPENSATING CENTERS AS ORIGIN OF YELLOW LUMINESCENCE IN GAN, Applied physics letters, 71(22), 1997, pp. 3224-3226
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Citation: T. Peng et al., BAND-GAP BOWING AND REFRACTIVE-INDEX SPECTRA OF POLYCRYSTALLINE ALXIN1-XN FILMS DEPOSITED BY SPUTTERING, Applied physics letters, 71(17), 1997, pp. 2439-2441
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Citation: A. Billeb et al., MICROCAVITY EFFECTS IN GAN EPITAXIAL-FILMS AND IN AG GAN/SAPPHIRE STRUCTURES/, Applied physics letters, 70(21), 1997, pp. 2790-2792
Authors:
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Citation: Ef. Schubert et al., TEMPERATURE AND MODULATION CHARACTERISTICS OF RESONANT-CAVITY LIGHT-EMITTING-DIODES, Journal of lightwave technology, 14(7), 1996, pp. 1721-1729
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GOEPFERT ID
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SCHURMAN MJ
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Citation: W. Grieshaber et al., COMPETITION BETWEEN BAND-GAP AND YELLOW LUMINESCENCE IN GAN AND ITS RELEVANCE FOR OPTOELECTRONIC DEVICES, Journal of applied physics, 80(8), 1996, pp. 4615-4620
Citation: Lw. Tu et al., IN-VACUUM CLEAVING AND COATING OF SEMICONDUCTOR-LASER FACETS USING THIN SILICON AND A DIELECTRIC, Journal of applied physics, 80(11), 1996, pp. 6448-6451
Citation: Ef. Schubert et al., ENHANCEMENT OF DEEP ACCEPTOR ACTIVATION IN SEMICONDUCTORS BY SUPERLATTICE DOPING, Applied physics letters, 69(24), 1996, pp. 3737-3739
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PASSLACK M
BETHEA CG
HOBSON WS
LOPATA J
SCHUBERT EF
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DEJONG JF
CHAKRABARTI UK
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Citation: M. Passlack et al., INFRARED MICROSCOPY STUDIES ON HIGH-POWER INGAAS-GAAS-INGAP LASERS WITH GA2O3 FACET COATINGS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 110-116
Citation: Ef. Schubert et al., PHENOMENOLOGY OF ZN DIFFUSION AND INCORPORATION IN INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY (OMVPE), Applied physics letters, 67(5), 1995, pp. 700-702
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TU LW
SCHUBERT EF
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ZYDZIK GJ
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Citation: Lw. Tu et al., SUPERIOR OUTPUT LINEARITY OF OPTIMIZED DOUBLE-HETEROSTRUCTURE VERTICAL-CAVITY TOP-EMITTING LASERS, Applied physics letters, 66(18), 1995, pp. 2315-2317
Authors:
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