Authors:
TASSIS DH
MITSAS CL
ZORBA TT
ANGELAKERIS M
DIMITRIADIS CA
VALASSIADES O
SIAPKAS DI
KIRIAKIDIS G
Citation: Dh. Tassis et al., OPTICAL AND ELECTRICAL CHARACTERIZATION OF HIGH-QUALITY BETA-FESI2 THIN-FILMS GROWN BY SOLID-PHASE EPITAXY, Applied surface science, 102, 1996, pp. 178-183
Citation: N. Hatzopoulos et al., OPTICAL INVESTIGATION OF STRUCTURES FORMED BY 2 MEV OXYGEN IMPLANTATION INTO SILICON, Thin solid films, 289(1-2), 1996, pp. 90-94
Authors:
HATZOPOULOS N
SIAPKAS DI
HEMMENT PLF
SKORUPA W
Citation: N. Hatzopoulos et al., FORMATION AND CHARACTERIZATION OF SI SIO2 MULTILAYER STRUCTURES BY OXYGEN-ION IMPLANTATION INTO SILICON/, Journal of applied physics, 80(9), 1996, pp. 4960-4970
Authors:
TASSIS DH
MITSAS CL
ZORBA TT
DIMITRIADIS CA
VALASSIADES O
SIAPKAS DI
ANGELAKERIS M
POULOPOULOS P
FLEVARIS NK
KIRIAKIDIS G
Citation: Dh. Tassis et al., INFRARED SPECTROSCOPIC AND ELECTRONIC TRANSPORT-PROPERTIES OF POLYCRYSTALLINE SEMICONDUCTING FESI2 THIN-FILMS, Journal of applied physics, 80(2), 1996, pp. 962-968
Authors:
SIAPKAS DI
HATZOPOULOS N
KATSIDIS CC
ZORBA T
MITSAS CL
HEMMENT PLF
Citation: Di. Siapkas et al., STRUCTURAL AND COMPOSITIONAL CHARACTERIZATION OF HIGH-ENERGY SEPARATION BY IMPLANTATION OF OXYGEN STRUCTURES USING INFRARED-SPECTROSCOPY, Journal of the Electrochemical Society, 143(9), 1996, pp. 3019-3032
Citation: T. Zorba et al., OPTICAL CHARACTERIZATION OF THIN AND ULTRATHIN SURFACE AND BURIED CUBIC SIC LAYERS USING FTIR SPECTROSCOPY, Microelectronic engineering, 28(1-4), 1995, pp. 229-232
Authors:
HATZOPOULOS N
PANKNIN D
FUKAREK W
SKORUPA W
SIAPKAS DI
HEMMENT PLF
Citation: N. Hatzopoulos et al., ELECTRICAL AND OPTICAL CHARACTERIZATION OF DOUBLE SIMOX STRUCTURES FORMED BY SEQUENTIAL HIGH-ENERGY OXYGEN IMPLANTATION INTO SILICON, Microelectronic engineering, 28(1-4), 1995, pp. 415-418
Authors:
KATSIDIS CC
SIAPKAS DI
PANKNIN D
HATZOPOULOS N
SKORUPA W
Citation: Cc. Katsidis et al., OPTICAL CHARACTERIZATION OF DOPED SIMOX STRUCTURES USING FTIR SPECTROSCOPY, Microelectronic engineering, 28(1-4), 1995, pp. 439-442
Citation: N. Hatzopoulos et al., OXIDE-GROWTH, REFRACTIVE-INDEX, AND COMPOSITION DEPTH PROFILES OF STRUCTURES FORMED BY 2-MEV OXYGEN IMPLANTATION INTO SILICON, Journal of applied physics, 77(2), 1995, pp. 577-586
Citation: Cl. Mitsas et Di. Siapkas, GENERALIZED MATRIX-METHOD FOR ANALYSIS OF COHERENT AND INCOHERENT REFLECTANCE AND TRANSMITTANCE OF MULTILAYER STRUCTURES WITH ROUGH SURFACES, INTERFACES, AND FINITE SUBSTRATES, Applied optics, 34(10), 1995, pp. 1678-1683
Authors:
MITSAS CL
SIAPKAS DI
POLYCHRONIADIS EK
VALASSIADES O
PARASKEVOPOULOS KM
Citation: Cl. Mitsas et al., GROWTH, ELECTRICAL, AND OPTICAL-PROPERTIES OF TIBISE2 SINGLE-CRYSTALS, Physica status solidi. a, Applied research, 136(2), 1993, pp. 483-495