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Results: 26-50/84
Authors:
NICOLETT AS
MARTINO JA
SIMOEN E
CLAEYS C
Citation: As. Nicolett et al., MOBILITY DEGRADATION INFLUENCE ON THE SOI MOSFET CHANNEL-LENGTH EXTRACTION AT 77 K, Journal de physique. IV, 6(C3), 1996, pp. 55-59
Authors:
SIMOEN E
DUBUC JP
VANHELLEMONT J
CLAEYS C
Citation: E. Simoen et al., IMPACT OF THE STARTING INTERSTITIAL OXYGEN CONCENTRATION ON THE ELECTRICAL CHARACTERISTICS OF ELECTRON-IRRADIATED SI JUNCTION DIODES, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 179-182
Authors:
KISSINGER G
VANHELLEMONT J
SIMOEN E
CLAEYS C
RICHTER H
Citation: G. Kissinger et al., INVESTIGATION OF OXYGEN PRECIPITATION RELATED CRYSTAL DEFECTS IN PROCESSED SILICON-WAFERS BY INFRARED LIGHT-SCATTERING TOMOGRAPHY, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 225-229
Authors:
SIMOEN E
VANHELLEMONT J
CLAEYS C
Citation: E. Simoen et al., THE LOW-FREQUENCY NOISE BEHAVIOR OF SI N(+)P JUNCTION DIODES FABRICATED ON (100) AND (111) SUBSTRATES, Physica. B, Condensed matter, 228(3-4), 1996, pp. 219-225
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, GATE LENGTH EFFECT ON THE RTS NOISE AMPLITUDE IN SOI MOSFETS, IEEE electron device letters, 17(4), 1996, pp. 181-183
Authors:
SIMOEN E
VANHELLEMONT J
CLAEYS C
KANIAVA A
GAUBAS E
Citation: E. Simoen et al., THE RESPONSE OF SI P-N-JUNCTION DIODES TO PROTON IRRADIATION, Semiconductor science and technology, 11(10), 1996, pp. 1434-1442
Authors:
CLAEYS C
SIMOEN E
VANHELLEMONT J
Citation: C. Claeys et al., PROCESS-INDUCED AND IRRADIATION-INDUCED DEFECTS IN SILICON DEVICES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 377(2-3), 1996, pp. 244-257
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, THE LOW-FREQUENCY NOISE BEHAVIOR OF SILICON-ON-INSULATOR TECHNOLOGIES, Solid-state electronics, 39(7), 1996, pp. 949-960
Authors:
SIMOEN E
VANHELLEMONT J
CLAEYS C
Citation: E. Simoen et al., ON THE RELATIONSHIP BETWEEN THE BULK RECOMBINATION LIFETIME AND THE EXCESS 1 F NOISE IN SILICON P-N-JUNCTION DIODES/, Solid state communications, 98(11), 1996, pp. 961-963
Authors:
OHYAMA H
VANHELLEMONT J
SIMOEN E
CLAEYS C
TAKAMI Y
HAYAMA K
HAKATA T
SUNAGA H
KOBAYASHI K
Citation: H. Ohyama et al., INFLUENCE OF THE SUBSTRATE ON THE DEGRADATION OF IRRADIATED SI DIODES, Physica status solidi. a, Applied research, 156(1), 1996, pp. 215-223
Authors:
LUKYANCHIKOVA N
PETRICHUK M
GARBAR N
SIMOEN E
CLAEYS C
Citation: N. Lukyanchikova et al., BACK AND FRONT INTERFACE RELATED GENERATION-RECOMBINATION NOISE IN BURIED-CHANNEL SOI PMOSFETS, I.E.E.E. transactions on electron devices, 43(3), 1996, pp. 417-423
IMPACT OF POLYSILICON EMITTER INTERFACIAL LAYER ENGINEERING ON THE 1 F NOISE OF BIPOLAR-TRANSISTORS/
Authors:
SIMOEN E
DECOUTERE S
CUTHBERTSON A
CLAEYS CL
DEFERM L
Citation: E. Simoen et al., IMPACT OF POLYSILICON EMITTER INTERFACIAL LAYER ENGINEERING ON THE 1 F NOISE OF BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2261-2268
Authors:
ROTONDARO ALP
HURD TQ
KANIAVA A
VANHELLEMONT J
SIMOEN E
HEYNS MM
CLAEYS C
Citation: Alp. Rotondaro et al., IMPACT OF FE AND CU CONTAMINATION ON THE MINORITY-CARRIER LIFETIME OFSILICON SUBSTRATES, Journal of the Electrochemical Society, 143(9), 1996, pp. 3014-3019
Authors:
SIMOEN E
VANHELLEMONT J
CLAEYS C
Citation: E. Simoen et al., EFFECTIVE GENERATION-RECOMBINATION PARAMETERS IN HIGH-ENERGY PROTON-IRRADIATED SILICON DIODES, Applied physics letters, 69(19), 1996, pp. 2858-2860
Authors:
SIMOEN E
VANHELLEMONT J
DUBUC JP
CLAEYS C
OHYAMA H
JOHLANDER B
Citation: E. Simoen et al., HIGH-ENERGY PARTICLE IRRADIATION EFFECTS ON THE LOW-FREQUENCY NOISE OF CZOCHRALSKI SILICON JUNCTION DIODES, Applied physics letters, 68(6), 1996, pp. 788-790
Authors:
SIMOEN E
VANHELLEMONT J
ROTONDARO ALP
CLAEYS C
Citation: E. Simoen et al., STATIC AND LOW-FREQUENCY NOISE CHARACTERISTICS OF N(+)P JUNCTION DIODES FABRICATED IN DIFFERENT SILICON SUBSTRATES, Semiconductor science and technology, 10(7), 1995, pp. 1002-1008
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, LOW-FREQUENCY NOISE CHARACTERIZATION OF GAMMA-IRRADIATED SILICON-ON-INSULATOR MOSFETS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 95(1), 1995, pp. 75-81
Authors:
VANDAMME EP
VANDAMME LKJ
CLAEYS C
SIMOEN E
SCHREUTELKAMP RJ
Citation: Ep. Vandamme et al., IMPACT OF SILICIDATION ON THE EXCESS NOISE BEHAVIOR OF MOS-TRANSISTORS, Solid-state electronics, 38(11), 1995, pp. 1893-1897
Authors:
MARTINO JA
SIMOEN E
CLAEYS C
Citation: Ja. Martino et al., A NEW METHOD FOR DETERMINING THE FRONT AND BACK INTERFACE-TRAP DENSITIES OF ACCUMULATION-MODE SOI MOSFETS AT 77 K, Solid-state electronics, 38(10), 1995, pp. 1799-1803
Authors:
SIMOEN E
CLAEYS C
COENEN S
DECRETON M
Citation: E. Simoen et al., DC AND LOW-FREQUENCY NOISE CHARACTERISTICS OF GAMMA-IRRADIATED GATE-ALL-AROUND SILICON-ON-INSULATOR MOS-TRANSISTORS, Solid-state electronics, 38(1), 1995, pp. 1-8
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, STATIC CHARACTERISTICS OF GATE-ALL-AROUND SOI MOSFETS AT CRYOGENIC TEMPERATURES, Physica status solidi. a, Applied research, 148(2), 1995, pp. 635-642
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, SUBSTRATE BIAS EFFECT ON THE RANDOM TELEGRAPH SIGNAL PARAMETERS IN SUBMICROMETER SILICON P-METAL-OXIDE-SEMICONDUCTOR TRANSISTORS, Journal of applied physics, 77(2), 1995, pp. 910-914
Authors:
VANHELLEMONT J
SIMOEN E
KANIAVA A
LIBEZNY M
CLAEYS C
Citation: J. Vanhellemont et al., IMPACT OF OXYGEN RELATED EXTENDED DEFECTS ON SILICON DIODE CHARACTERISTICS, Journal of applied physics, 77(11), 1995, pp. 5669-5676
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, CORRELATION BETWEEN THE LOW-FREQUENCY NOISE SPECTRAL DENSITY AND THE STATIC DEVICE PARAMETERS OF SILICON-ON-INSULATOR MOSFETS, I.E.E.E. transactions on electron devices, 42(8), 1995, pp. 1467-1472
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, THE CRYOGENIC OPERATION OF PARTIALLY DEPLETED SILICON-ON-INSULATOR INVERTERS, I.E.E.E. transactions on electron devices, 42(6), 1995, pp. 1100-1105