Authors: VOZMILOVA LN GAMAN VI KALYGINA VM PANIN AV SMIRNOVA TP

Citation: Ln. Vozmilova et al., EFFECT OF LASER-RADIATION ON THE ELECTRONIC DENSITY-OF-STATES OF AN (INSULATOR GALLIUM-ARSENIDE) INTERFACE, Semiconductors, 31(4), 1997, pp. 418-422

Authors: SMIRNOVA TP YAKOVKINA LV

Citation: Tp. Smirnova et Lv. Yakovkina, THE MECHANISM OF DEHYDROGENATION OF SINX-H FILMS, Thin solid films, 293(1-2), 1997, pp. 6-10

Authors: SMIRNOVA TP YAKOVKINA LV AMOSOV YI DANILOVICH OV

Citation: Tp. Smirnova et al., DOWNSTREAM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SINX-H FILMS FROM HEXAMETHYLCYCLOTRISILAZANE, Inorganic materials, 32(6), 1996, pp. 615-619

Authors: SMIRNOVA TP JAKOVKINA LV JASHKIN IL SYSOEVA NP AMOSOV JI

Citation: Tp. Smirnova et al., BORON-NITRIDE FILMS PREPARED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FROM BORAZINE (B3N3H6), Thin solid films, 237(1-2), 1994, pp. 32-37

Authors: KHRAMOVA LV SMIRNOVA TP EREMINA EG

Citation: Lv. Khramova et al., PRODUCTION OF SILICON OXYNITRIDE LAYERS BY USE OF HEXAMETHYLDISILAZANE AND NITROGEN(I) OXIDE, Inorganic materials, 28(8), 1992, pp. 1329-1332

Authors: SMIRNOVA TP KHRAMOVA LV YASHKIN IL BAKLANOV PY KICHAI VN SYSOEVA NP

Citation: Tp. Smirnova et al., PREPARATION OF BORON-NITRIDE FILMS BY INDIRECT HIGH-FREQUENCY ACTIVATION OF BORAZOLE, Inorganic materials, 28(7), 1992, pp. 1118-1122