Citation: S. Usher et Gp. Srivastava, THEORETICAL-STUDY OF THE ANHARMONIC DECAY OF NONEQUILIBRIUM LO PHONONS IN SEMICONDUCTOR STRUCTURES, Physical review. B, Condensed matter, 50(19), 1994, pp. 14179-14186
Citation: Z. Ikonic et al., ELECTRONIC-STRUCTURE OF [113]-GROWN (GAAS)M(ALAS)N SUPERLATTICES, Physical review. B, Condensed matter, 49(15), 1994, pp. 10749-10752
Citation: A. Umerski et Gp. Srivastava, CALCULATED ELECTRONIC BAND STRUCTURES OF III-V SEMICONDUCTORS WITH METALLIC OVERLAYERS, Surface science, 309, 1994, pp. 963-968
Citation: Wg. Schmidt et Gp. Srivastava, FIRST PRINCIPLES CALCULATIONS OF INTERFACE PHONONS OF AN EPITAXIAL SBMONOLAYER ON GAAS(110) AND INP(110), Solid state communications, 89(4), 1994, pp. 345-348
Citation: Bk. Kuanr et Gp. Srivastava, DISPERSION OBSERVED IN ELECTRICAL-PROPERTIES OF TITANIUM-SUBSTITUTED LITHIUM FERRITES, Journal of applied physics, 75(10), 1994, pp. 6115-6117
Citation: Gp. Srivastava et Vc. Srivastava, EFFECT OF IRRIGATION AND FOLIAR SPRAY OF NUTRIENTS ON GROWTH AND SEEDYIELD OF GRAM (CICER-ARIETINUM), Indian Journal of Agricultural Sciences, 64(4), 1994, pp. 219-222
Citation: Mj. Kumar et al., 10-GHZ CYLINDRICAL CAVITY RESONATOR FOR CHARACTERIZATION OF SURFACE-RESISTANCE OF HIGH-T-C SUPERCONDUCTING BULK AND THIN-FILMS, IEEE transactions on magnetics, 30(6), 1994, pp. 4605-4607
Citation: Gp. Srivastava et Md. Pashley, STM STUDIES OF FERMI-LEVEL PINNING ON THE GAAS(001) SURFACE - DISCUSSION, Philosophical transactions-Royal Society of London. Physical sciences and engineering, 344(1673), 1993, pp. 543-543
Citation: Gp. Srivastava et al., CONTROL OF ELECTRICAL BARRIERS AT SEMICONDUCTOR HETEROJUNCTIONS BY INTERFACE DOPING - DISCUSSION, Philosophical transactions-Royal Society of London. Physical sciences and engineering, 344(1673), 1993, pp. 585-586
Citation: Gp. Srivastava, ATOMIC GEOMETRY, ELECTRONIC STATES AND BONDING AT THE GAP(110)-SB(L ML) INTERFACE (VOL 5, PG 4697, 1993), Journal of physics. Condensed matter, 5(44), 1993, pp. 8485-8485
Citation: Ma. Ball et Gp. Srivastava, CALCULATION OF PSEUDOATOM INFORMATION IN GALLIUM-ARSENIDE, Journal of physics. Condensed matter, 5(16), 1993, pp. 2511-2520
Citation: Sj. Jenkins et al., SIMPLE APPROACH TO SELF-ENERGY CORRECTIONS IN SEMICONDUCTORS AND INSULATORS, Physical review. B, Condensed matter, 48(7), 1993, pp. 4388-4397
Citation: Z. Ikonic et al., ELECTRONIC-PROPERTIES OF TWIN BOUNDARIES AND TWINNING SUPERLATTICES IN DIAMOND-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS, Physical review. B, Condensed matter, 48(23), 1993, pp. 17181-17193
Citation: A. Umerski et Gp. Srivastava, GEOMETRY AND ELECTRONIC BAND-STRUCTURE OF GAAS(110)-BI (1 ML), Physical review. B, Condensed matter, 48(11), 1993, pp. 8450-8453
Citation: Gp. Srivastava, ATOMIC GEOMETRY AND ELECTRONIC-STRUCTURE OF A MONOLAYER OF SB ON (110) GAAS AND INP, Physical review. B, Condensed matter, 47(24), 1993, pp. 16616-16619
Citation: Gp. Srivastava et Vc. Srivastava, EFFECT OF WINTER LEGUMES ON NITROGEN ECONOMY OF SUCCEEDING RICE (ORYZA-SATIVA), Indian Journal of Agricultural Sciences, 63(8), 1993, pp. 501-503
Citation: Gp. Srivastava et Vc. Srivastava, NITROGEN ECONOMY AND PRODUCTIVITY OF WHEAT (TRITICUM-AESTIVUM) SUCCEEDING GRAIN LEGUMES, Indian Journal of Agricultural Sciences, 63(11), 1993, pp. 694-698
Citation: Z. Ikonic et al., INTERSUBBAND ABSORPTION-LINE BROADENING IN IN0.53GA0.47AS IN0.52AL0.48AS QUANTUM-WELLS - A PSEUDOPOTENTIAL CALCULATION/, Solid state communications, 81(10), 1992, pp. 841-843