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Results: 1-25 | 26-50 | 51-62 |
Results: 51-62/62
A MONOLITHICALLY INTEGRATED 120-GHZ INGAAS INALAS INP HEMT AMPLIFIER
Authors: LAI R WANG H TAN KL STREIT DC LIU PH VELEBIR J CHEN S BERENZ J POSPIESZALSKI MW
Citation: R. Lai et al., A MONOLITHICALLY INTEGRATED 120-GHZ INGAAS INALAS INP HEMT AMPLIFIER, IEEE microwave and guided wave letters, 4(6), 1994, pp. 194-195
A 100-GHZ MONOLITHIC CASCODE INALAS INGAAS HEMT OSCILLATOR
Authors: KWON YW PAVLIDIS D MARSH P BROCK T STREIT DC
Citation: Yw. Kwon et al., A 100-GHZ MONOLITHIC CASCODE INALAS INGAAS HEMT OSCILLATOR, IEEE microwave and guided wave letters, 4(5), 1994, pp. 135-137
A NOVEL HETEROJUNCTION BIPOLAR-TRANSISTOR ACTIVE FEEDBACK DESIGN
Authors: KOBAYHASHI KW OKI AK TRAN LT VELEBIR JR STREIT DC
Citation: Kw. Kobayhashi et al., A NOVEL HETEROJUNCTION BIPOLAR-TRANSISTOR ACTIVE FEEDBACK DESIGN, IEEE microwave and guided wave letters, 4(5), 1994, pp. 146-148
35-GHZ HEMT AMPLIFIERS FABRICATED USING INTEGRATED HEMT-HBT MATERIAL GROWN BY SELECTIVE MBE
Authors: UMEMOTO DK STREIT DC KOBAYASHI KW OKI AK
Citation: Dk. Umemoto et al., 35-GHZ HEMT AMPLIFIERS FABRICATED USING INTEGRATED HEMT-HBT MATERIAL GROWN BY SELECTIVE MBE, IEEE microwave and guided wave letters, 4(11), 1994, pp. 361-363
0.10-MU-M GRADED INGAAS CHANNEL INP HEMT WITH 305-GHZ FT AND 340-GHZ FMAX
Authors: WOJTOWICZ M LAI R STREIT DC NG GI BLOCK TR TAN KL LIU PH FREUDENTHAL AK DIA RM
Citation: M. Wojtowicz et al., 0.10-MU-M GRADED INGAAS CHANNEL INP HEMT WITH 305-GHZ FT AND 340-GHZ FMAX, IEEE electron device letters, 15(11), 1994, pp. 477-479
CHARACTERIZATION OF BURIED PSEUDOMORPHIC INGAAS LAYERS USING HIGH-RESOLUTION X-RAY-DIFFRACTION
Authors: MESHKINPOUR M GOORSKY MS MATNEY KM STREIT DC BLOCK TR
Citation: M. Meshkinpour et al., CHARACTERIZATION OF BURIED PSEUDOMORPHIC INGAAS LAYERS USING HIGH-RESOLUTION X-RAY-DIFFRACTION, Journal of applied physics, 76(6), 1994, pp. 3362-3366
FREE-ELECTRON DISTRIBUTION IN DELTA-DOPED INGAAS ALGAAS PSEUDOMORPHICHIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES/
Authors: JOGAI B YU PW STREIT DC
Citation: B. Jogai et al., FREE-ELECTRON DISTRIBUTION IN DELTA-DOPED INGAAS ALGAAS PSEUDOMORPHICHIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES/, Journal of applied physics, 75(3), 1994, pp. 1586-1591
INALAS INGAAS HBT X-BAND DOUBLE-BALANCED UP-CONVERTER/
Authors: KOBAYASHI KW TRAN LT BUI S OKI AK STREIT DC ROSEN M
Citation: Kw. Kobayashi et al., INALAS INGAAS HBT X-BAND DOUBLE-BALANCED UP-CONVERTER/, IEEE journal of solid-state circuits, 29(10), 1994, pp. 1238-1243
MONOLITHIC GAAS HBT P-I-N-DIODE VARIABLE GAIN AMPLIFIERS, ATTENUATORS, AND SWITCHES
Authors: KOBAYASHI KW OKI AK UMEMOTO DK CLAXTON SKZ STREIT DC
Citation: Kw. Kobayashi et al., MONOLITHIC GAAS HBT P-I-N-DIODE VARIABLE GAIN AMPLIFIERS, ATTENUATORS, AND SWITCHES, IEEE transactions on microwave theory and techniques, 41(12), 1993, pp. 2295-2302
A D-BAND MONOLITHIC FUNDAMENTAL OSCILLATOR USING INP-BASED HEMTS
Authors: KWON YW PAVLIDIS D BROCK TL STREIT DC
Citation: Yw. Kwon et al., A D-BAND MONOLITHIC FUNDAMENTAL OSCILLATOR USING INP-BASED HEMTS, IEEE transactions on microwave theory and techniques, 41(12), 1993, pp. 2336-2344
IMPACT IONIZATION AND LIGHT-EMISSION IN HIGH-POWER PSEUDOMORPHIC ALGAAS INGAAS HEMTS/
Authors: TEDESCO C ZANONI E CANALI C BIGLIARDI S MANFREDI M STREIT DC ANDERSON WT
Citation: C. Tedesco et al., IMPACT IONIZATION AND LIGHT-EMISSION IN HIGH-POWER PSEUDOMORPHIC ALGAAS INGAAS HEMTS/, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1211-1214
INTEGRATED COMPLEMENTARY HBT MICROWAVE PUSH-PULL AND DARLINGTON AMPLIFIERS WITH P-N-P ACTIVE LOADS
Authors: KOBAYASHI KW UMEMOTO DK VELEBIR JR OKI AK STREIT DC
Citation: Kw. Kobayashi et al., INTEGRATED COMPLEMENTARY HBT MICROWAVE PUSH-PULL AND DARLINGTON AMPLIFIERS WITH P-N-P ACTIVE LOADS, IEEE journal of solid-state circuits, 28(10), 1993, pp. 1011-1017
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