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Results: 26-50/100
Authors:
NEUBAUER B
ROSENAUER A
GERTHSEN D
AMBACHER O
STUTZMANN M
Citation: B. Neubauer et al., ANALYSIS OF COMPOSITION FLUCTUATIONS ON AN ATOMIC-SCALE IN AL0.25GA0.75N BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY, Applied physics letters, 73(7), 1998, pp. 930-932
Authors:
KAWACHI G
GRAEFF CFO
BRANDT MS
STUTZMANN M
Citation: G. Kawachi et al., SATURATION MEASUREMENTS OF ELECTRICALLY DETECTED MAGNETIC-RESONANCE IN HYDROGENATED AMORPHOUS-SILICON BASED THIN-FILM TRANSISTORS, JPN J A P 1, 36(1A), 1997, pp. 121-125
Authors:
STUTZMANN M
AMBACHER O
CROS A
BRANDT MS
ANGERER H
DIMITROV R
REINACHER N
METZGER T
HOPLER R
BRUNNER D
FREUDENBERG F
HANDSCHUH R
DEGER C
Citation: M. Stutzmann et al., PROPERTIES AND APPLICATIONS OF MBE GROWN ALGAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 212-218
Authors:
ROHRER E
GRAEFF CFO
NEBEL CE
STUTZMANN M
GUTTLER H
ZACHAI R
Citation: E. Rohrer et al., SUB-BANDGAP SPECTROSCOPY OF CHEMICAL-VAPOR-DEPOSITION DIAMOND, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 115-118
Authors:
STUTZMANN M
Citation: M. Stutzmann, EDITORIAL NOTE, Physica status solidi. b, Basic research, 199(1), 1997, pp. 3-3
Authors:
ZHANG JM
RUF T
CARDONA M
AMBACHER O
STUTZMANN M
WAGNER JM
BECHSTEDT F
Citation: Jm. Zhang et al., RAMAN-SPECTRA OF ISOTOPIC GAN, Physical review. B, Condensed matter, 56(22), 1997, pp. 14399-14406
Authors:
NEBEL CE
MUNZ J
STUTZMANN M
ZACHAI R
GUTTLER H
Citation: Ce. Nebel et al., ELECTRONIC-PROPERTIES OF CVD AND SYNTHETIC DIAMOND, Physical review. B, Condensed matter, 55(15), 1997, pp. 9786-9791
Authors:
ROSENBAUER M
STUTZMANN M
FINKBEINER S
WEBER J
BUSTARRET E
Citation: M. Rosenbauer et al., COMMENT ON RESONANTLY EXCITED PHOTOLUMINESCENCE SPECTRA OF POROUS SILICON - REPLY, Physical review. B, Condensed matter, 55(15), 1997, pp. 10117-10118
Authors:
CROS A
ANGERER H
AMBACHER O
STUTZMANN M
HOPLER R
METZGER T
Citation: A. Cros et al., RAMAN-STUDY OF THE OPTICAL PHONONS IN ALXGA1-XN ALLOYS, Solid state communications, 104(1), 1997, pp. 35-39
Authors:
BRANDT MS
PUCHERT T
STUTZMANN M
Citation: Ms. Brandt et al., ELECTRONIC TRANSPORT IN CRYSTALLINE SILOXENE, Solid state communications, 102(5), 1997, pp. 365-368
Authors:
METZGER T
HOPLER R
BORN E
CHRISTIANSEN S
ALBRECHT M
STRUNK HP
AMBACHER O
STUTZMANN M
STOMMER R
SCHUSTER M
GOBEL H
Citation: T. Metzger et al., COHERENT X-RAY-SCATTERING PHENOMENON IN HIGHLY DISORDERED EPITAXIAL ALN FILMS, Physica status solidi. a, Applied research, 162(2), 1997, pp. 529-535
Authors:
BAYERL MW
BRANDT MS
STUTZMANN M
Citation: Mw. Bayerl et al., ELECTRICALLY DETECTED MAGNETIC-RESONANCE (EDMR) OF DEFECTS IN GAN LIGHT-EMITTING-DIODES, Physica status solidi. a, Applied research, 159(2), 1997, pp. 5-6
Authors:
STUTZMANN M
Citation: M. Stutzmann, THE RAPID RESEARCH NOTES OF PHYSICA-STATUS-SOLIDI - A NEW FORUM FOR FAST PUBLICATION OF YOUR LATEST RESULTS IN THE FIELD OF SOLID-STATE PHYSICS, Physica status solidi. a, Applied research, 159(1), 1997, pp. 1-2
Authors:
KELLY MK
AMBACHER O
DIMITROV R
HANDSCHUH R
STUTZMANN M
Citation: Mk. Kelly et al., OPTICAL PROCESS FOR LIFTOFF OF GROUP-III NITRIDE FILMS, Physica status solidi. a, Applied research, 159(1), 1997, pp. 3-4
Authors:
STUTZMANN M
Citation: M. Stutzmann, EDITORIAL NOTE, Physica status solidi. a, Applied research, 159(1), 1997, pp. 3-3
Authors:
AMBACHER O
ANGERER H
DIMITROV R
RIEGER W
STUTZMANN M
DOLLINGER G
BERGMAIER A
Citation: O. Ambacher et al., HYDROGEN IN GALLIUM NITRIDE GROWN BY MOCVD, Physica status solidi. a, Applied research, 159(1), 1997, pp. 105-119
Authors:
CROS A
DIMITROV R
ANGERER H
AMBACHER O
STUTZMANN M
CHRISTIANSEN S
ALBRECHT M
STRUNK HP
Citation: A. Cros et al., INFLUENCE OF MAGNESIUM DOPING ON THE STRUCTURAL-PROPERTIES OF GAN LAYERS, Journal of crystal growth, 181(3), 1997, pp. 197-203
Authors:
AMBACHER O
DIMITROV R
LENTZ D
METZGER T
RIEGER W
STUTZMANN M
Citation: O. Ambacher et al., GROWTH OF GAN ALN AND ALGAN BY MOCVD USING TRIETHYLGALLIUM AND TRITERTIARYBUTYLALUMINIUM/, Journal of crystal growth, 170(1-4), 1997, pp. 335-339
Authors:
ROSENBAUER M
STUTZMANN M
Citation: M. Rosenbauer et M. Stutzmann, TRANSPORT-PROPERTIES AND ELECTROLUMINESCENCE OF SILOXENE, Journal of applied physics, 82(9), 1997, pp. 4520-4524
Authors:
NEBEL CE
ROGG J
KELLY MK
DAHLHEIMER B
ROTHER M
BICHLER M
WEGSCHEIDER W
STUTZMANN M
Citation: Ce. Nebel et al., REALIZATION OF ALGAAS ANTIDOT ARRAYS BY PULSED-LASER INTERFERENCE GRATINGS, Journal of applied physics, 82(3), 1997, pp. 1497-1499
Authors:
BRUNNER D
ANGERER H
BUSTARRET E
FREUDENBERG F
HOPLER R
DIMITROV R
AMBACHER O
STUTZMANN M
Citation: D. Brunner et al., OPTICAL-CONSTANTS OF EPITAXIAL ALGAN FILMS AND THEIR TEMPERATURE-DEPENDENCE, Journal of applied physics, 82(10), 1997, pp. 5090-5096
Authors:
GRAEFF CFO
NEBEL CE
STUTZMANN M
FLOTER A
ZACHAI R
Citation: Cfo. Graeff et al., CHARACTERIZATION OF TEXTURED POLYCRYSTALLINE DIAMOND BY ELECTRON-SPIN-RESONANCE SPECTROSCOPY, Journal of applied physics, 81(1), 1997, pp. 234-237
Authors:
ANGERER H
BRUNNER D
FREUDENBERG F
AMBACHER O
STUTZMANN M
HOPLER R
METZGER T
BORN E
DOLLINGER G
BERGMAIER A
KARSCH S
KORNER HJ
Citation: H. Angerer et al., DETERMINATION OF THE AL MOLE FRACTION AND THE BAND-GAP BOWING OF EPITAXIAL ALXGA1-XN FILMS, Applied physics letters, 71(11), 1997, pp. 1504-1506
Authors:
ZACHARIAS M
DIMOVAMALINOVSKA D
STUTZMANN M
Citation: M. Zacharias et al., PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON SUBOXIDE ALLOYS WITH VISIBLE ROOM-TEMPERATURE PHOTOLUMINESCENCE, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 73(5), 1996, pp. 799-816
Authors:
AMBACHER O
BRANDT MS
DIMITROV R
METZGER T
STUTZMANN M
FISCHER RA
MIEHR A
BERGMAIER A
DOLLINGER G
Citation: O. Ambacher et al., THERMAL-STABILITY AND DESORPTION OF GROUP-III NITRIDES PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3532-3542