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Results: 1-9 |
Results: 9
MODELING THE OPERATION OF AN A-SI-H BASED POSITION-SENSITIVE DETECTOR
Authors: GEORGIEV SS NEDEV N SUEVA D TONEVA A
Citation: Ss. Georgiev et al., MODELING THE OPERATION OF AN A-SI-H BASED POSITION-SENSITIVE DETECTOR, Journal of physics. Condensed matter, 10(25), 1998, pp. 5515-5524
INVESTIGATION OF THE N(-P-PI-P(+) STRUCTURE OF SILICON AVALANCHE-DIODES BY CHARGED-PARTICLES())
Authors: SUEVA D STAIKOVA V VAPIREV EI
Citation: D. Sueva et al., INVESTIGATION OF THE N(-P-PI-P(+) STRUCTURE OF SILICON AVALANCHE-DIODES BY CHARGED-PARTICLES()), Applied physics A: Materials science & processing, 66(5), 1998, pp. 549-554
INVESTIGATION OF RADIATION DEFECTS IN N(-P-P(+) PLANAR SILICON NEUTRON DETECTORS())
Authors: STEFANOV KD SUEVA D GERMANOVA K HARDALOV CM
Citation: Kd. Stefanov et al., INVESTIGATION OF RADIATION DEFECTS IN N(-P-P(+) PLANAR SILICON NEUTRON DETECTORS()), Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 412(2-3), 1998, pp. 387-391
A POSITION-SENSITIVE DETECTOR BASED ON AN ITO-SI STRUCTURE
Authors: GEORGIEV SS SUEVA D NEDEV N
Citation: Ss. Georgiev et al., A POSITION-SENSITIVE DETECTOR BASED ON AN ITO-SI STRUCTURE, Journal of physics. Condensed matter, 9(23), 1997, pp. 4995-5001
INVESTIGATION OF RADIATION-DAMAGE IN SILICON PRODUCED BY FAST-NEUTRONIRRADIATION WITH LIFETIME MEASUREMENTS AND DEEP-LEVEL TRANSIENT SPECTROSCOPY
Authors: STEFANOV KD HARDALOV CM SUEVA D
Citation: Kd. Stefanov et al., INVESTIGATION OF RADIATION-DAMAGE IN SILICON PRODUCED BY FAST-NEUTRONIRRADIATION WITH LIFETIME MEASUREMENTS AND DEEP-LEVEL TRANSIENT SPECTROSCOPY, Physica status solidi. a, Applied research, 163(1), 1997, pp. 27-32
HOMOGENEOUS CVD ALPHA-SI-H THIN-FILM BASED POSITION-SENSITIVE PHOTODETECTOR
Authors: TONEVA A MIHAILOVA T SUEVA D GEORGIEV S
Citation: A. Toneva et al., HOMOGENEOUS CVD ALPHA-SI-H THIN-FILM BASED POSITION-SENSITIVE PHOTODETECTOR, Vacuum, 47(10), 1996, pp. 1207-1209
ON THE APPLICABILITY OF DEEP-LEVEL TRANSIENT SPECTROSCOPY FOR THE INVESTIGATION OF DEEP CENTERS IN SILICON CREATED BY FAST-NEUTRON IRRADIATION
Authors: HARDALOV CM STEFANOV KD SUEVA D
Citation: Cm. Hardalov et al., ON THE APPLICABILITY OF DEEP-LEVEL TRANSIENT SPECTROSCOPY FOR THE INVESTIGATION OF DEEP CENTERS IN SILICON CREATED BY FAST-NEUTRON IRRADIATION, Applied physics A: Materials science & processing, 61(2), 1995, pp. 107-109
DETECTION OF BETA-PARTICLES, CONVERSION ELECTRONS AND GAMMA-RAYS WITHSILICON PLANAR DETECTORS
Authors: VAPIREV EI SUEVA D SPASSOV V CHIKOV N IVANOV I
Citation: Ei. Vapirev et al., DETECTION OF BETA-PARTICLES, CONVERSION ELECTRONS AND GAMMA-RAYS WITHSILICON PLANAR DETECTORS, Applied radiation and isotopes, 45(4), 1994, pp. 453-459
SILICON DETECTORS FOR CHARGED-PARTICLES MANUFACTURED BY CONVENTIONAL PLANAR TECHNOLOGY
Authors: SUEVA D SPASSOV V CHIKOV N VAPIREV EI IVANOV I
Citation: D. Sueva et al., SILICON DETECTORS FOR CHARGED-PARTICLES MANUFACTURED BY CONVENTIONAL PLANAR TECHNOLOGY, IEEE transactions on nuclear science, 40(3), 1993, pp. 257-261
Risultati: 1-9 |