Authors:
Borgstrom, M
Bryllert, T
Gustafson, B
Johansson, J
Sass, T
Wernersson, LE
Seifert, W
Samuelson, L
Citation: M. Borgstrom et al., Electron beam pre-patterning for site-control of self-assembled InAs quantum dots on InP surfaces, J ELEC MAT, 30(5), 2001, pp. 482-486
Authors:
Borgstrom, M
Bryllert, T
Sass, T
Gustafson, B
Wernersson, LE
Seifert, W
Samuelson, L
Citation: M. Borgstrom et al., High peak-to-valley ratios observed in InAs/InP resonant tunneling quantumdot stacks, APPL PHYS L, 78(21), 2001, pp. 3232-3234
Authors:
Pietzonka, I
Sass, T
Benndorf, G
Franzheld, R
Gottschalch, V
Citation: I. Pietzonka et al., MOVPE growth and characterisation of Zn-doped (GaIn)P layers with respect to surface structure and ordering, CRYST RES T, 35(3), 2000, pp. 271-278
Authors:
Sass, T
Pietzonka, I
Gottschalch, V
Wagner, G
Citation: T. Sass et al., Correlation between the surface morphology and antiphase boundaries in ordered (GaIn)P, THIN SOL FI, 348(1-2), 1999, pp. 196-201
Authors:
Pietzonka, I
Franzheld, R
Sass, T
Benndorf, G
Schwabe, R
Handschuh, M
Gottschalch, V
Citation: I. Pietzonka et al., Metal organic vapour phase epitaxial growth and characterization of (GaIn)P layers grown with different P-containing precursors, J CRYST GR, 196(1), 1999, pp. 33-40
Authors:
Schubert, M
Woollam, JA
Leibiger, G
Rheinlander, B
Pietzonka, I
Sass, T
Gottschalch, V
Citation: M. Schubert et al., Isotropic dielectric functions of highly disordered AlxGa1-xInP (0 <= x <=1) lattice matched to GaAs, J APPL PHYS, 86(4), 1999, pp. 2025-2033