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Results: 1-14 |
Results: 14
Investigation of body-tie effects on ion beam induced charge collection insilicon-on-insulator FETs using the Sandia nuclear microprobe
Authors: Walsh, DS Dodd, PE Shaneyfelt, MR Schwank, JR
Citation: Ds. Walsh et al., Investigation of body-tie effects on ion beam induced charge collection insilicon-on-insulator FETs using the Sandia nuclear microprobe, NUCL INST B, 181, 2001, pp. 305-310
Silicon-on-insulator non-volatile field-effect transistor memory
Authors: Schwank, JR Shaneyfelt, MR Meisenheimer, TL Draper, BL Vanhesden, K Fleetwood, DM
Citation: Jr. Schwank et al., Silicon-on-insulator non-volatile field-effect transistor memory, MICROEL ENG, 59(1-4), 2001, pp. 253-258
Single-event upset and snapback in silicon-on-insulator devices and integrated circuits
Authors: Dodd, PE Shaneyfelt, MR Walsh, DS Schwank, JR Hash, GL Loemker, RA Draper, BL Winokur, PS
Citation: Pe. Dodd et al., Single-event upset and snapback in silicon-on-insulator devices and integrated circuits, IEEE NUCL S, 47(6), 2000, pp. 2165-2174
Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides
Authors: Schwank, JR Shaneyfelt, MR Dodd, PE Ferlet-Cavrois, V Loemker, RA Winokur, PS Fleetwood, DM Paillet, P Leray, JL Draper, BL Witczak, SC Riewe, LC
Citation: Jr. Schwank et al., Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides, IEEE NUCL S, 47(6), 2000, pp. 2175-2182
Worst-case bias during total dose irradiation of SOI transistors
Authors: Ferlet-Cavrois, V Colladant, T Paillet, P Leray, JL Musseau, O Schwank, JR Shaneyfelt, MR Pelloie, JL de Poncharra, JD
Citation: V. Ferlet-cavrois et al., Worst-case bias during total dose irradiation of SOI transistors, IEEE NUCL S, 47(6), 2000, pp. 2183-2188
Implications of radiation-induced dopant deactivation for npn bipolar junction transistors
Authors: Witczak, SC Lacoe, RC Shaneyfelt, MR Mayer, DC Schwank, JR Winokur, PS
Citation: Sc. Witczak et al., Implications of radiation-induced dopant deactivation for npn bipolar junction transistors, IEEE NUCL S, 47(6), 2000, pp. 2281-2288
Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs
Authors: Shaneyfelt, MR Schwank, JR Witczak, SC Fleetwood, DM Pease, RL Winokur, PS Riewe, LC Hash, GL
Citation: Mr. Shaneyfelt et al., Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs, IEEE NUCL S, 47(6), 2000, pp. 2539-2545
New insights into fully-depleted SOI transistor response after total-dose irradiation
Authors: Schwank, JR Shaneyfelt, MR Dodd, PE Burns, JA Keast, CL Wyatt, PW
Citation: Jr. Schwank et al., New insights into fully-depleted SOI transistor response after total-dose irradiation, IEEE NUCL S, 47(3), 2000, pp. 604-612
A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films
Authors: Vanheusden, K Warren, WL Devine, RAB Fleetwood, DM Draper, BL Schwank, JR
Citation: K. Vanheusden et al., A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films, J NON-CRYST, 254, 1999, pp. 1-10
BUSFET - A radiation-hardened SOI transistor
Authors: Schwank, JR Shaneyfelt, MR Draper, BL Dodd, PE
Citation: Jr. Schwank et al., BUSFET - A radiation-hardened SOI transistor, IEEE NUCL S, 46(6), 1999, pp. 1809-1816
Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films
Authors: Vanheusden, K Warren, WL Fleetwood, DM Schwank, JR Shaneyfelt, MR Draper, BL Winokur, PS Devine, RAB Archer, LB Brown, GA Wallace, RM
Citation: K. Vanheusden et al., Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films, APPL PHYS L, 73(5), 1999, pp. 674-676
1998 IEEE Nuclear and Space Radiation Effects Conference
Authors: Schwank, JR
Citation: Jr. Schwank, 1998 IEEE Nuclear and Space Radiation Effects Conference, IEEE NUCL S, 45(6), 1998, pp. 2327-2328
The effects of irradiation and proton implantation on the density of mobile protons in SiO2 thin films
Authors: Vanheusden, K Fleetwood, DM Shaneyfelt, MR Draper, BL Schwank, JR
Citation: K. Vanheusden et al., The effects of irradiation and proton implantation on the density of mobile protons in SiO2 thin films, IEEE NUCL S, 45(6), 1998, pp. 2391-2397
Radiation effects on surface micromachined comb drives and microengines
Authors: Schanwald, LP Schwank, JR Sniegowski, JJ Walsh, DS Smith, NF Peterson, KA Shaneyfelt, MR Winokur, PS Smith, JH Doyle, BL
Citation: Lp. Schanwald et al., Radiation effects on surface micromachined comb drives and microengines, IEEE NUCL S, 45(6), 1998, pp. 2789-2798
Risultati: 1-14 |