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Results: 1-16 |
Results: 16
Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors
Authors: Huang, JJ Hattendorf, M Feng, M Lambert, DJH Shelton, BS Wong, MM Chowdhury, U Zhu, TG Kwon, HK Dupuis, RD
Citation: Jj. Huang et al., Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors, IEEE ELEC D, 22(4), 2001, pp. 157-159
Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition
Authors: Kwon, HK Eiting, CJ Lambert, DJH Shelton, BS Wong, MM Zhu, TG Dupuis, RD
Citation: Hk. Kwon et al., Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition, J APPL PHYS, 90(4), 2001, pp. 1817-1822
Simulation of the electrical characteristics of high-voltage mesa and planar GaN Schottky and p-i-n rectifiers
Authors: Shelton, BS Zhu, TG Lambert, DJH Dupuis, RD
Citation: Bs. Shelton et al., Simulation of the electrical characteristics of high-voltage mesa and planar GaN Schottky and p-i-n rectifiers, IEEE DEVICE, 48(8), 2001, pp. 1498-1502
Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition
Authors: Shelton, BS Lambert, DJH Huang, JJ Wong, MM Chowdhury, U Zhu, TG Kwon, HK Liliental-Weber, Z Benarama, M Feng, M Dupuis, RD
Citation: Bs. Shelton et al., Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition, IEEE DEVICE, 48(3), 2001, pp. 490-494
Room and low temperature study of common emitter current gain in AlGaN/GaNheterojunction bipolar transistors
Authors: Huang, JJ Caruth, D Feng, M Lambert, DJH Shelton, BS Wong, MM Chowdhury, U Zhu, TG Kwon, HK Dupuis, RD
Citation: Jj. Huang et al., Room and low temperature study of common emitter current gain in AlGaN/GaNheterojunction bipolar transistors, ELECTR LETT, 37(6), 2001, pp. 393-395
Ultrasmooth GaN etched surfaces using photoelectrochemical wet etching andan ultrasonic treatment
Authors: Shelton, BS Zhu, TG Wong, MM Kwon, HK Eiting, CJ Lambert, DJH Turini, SP Dupuis, RD
Citation: Bs. Shelton et al., Ultrasmooth GaN etched surfaces using photoelectrochemical wet etching andan ultrasonic treatment, EL SOLID ST, 3(2), 2000, pp. 87-89
Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition
Authors: Kwon, HK Eiting, CJ Lambert, DJH Wong, MM Shelton, BS Zhu, TG Liliental-Weber, Z Benamura, M Dupuis, RD
Citation: Hk. Kwon et al., Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition, J CRYST GR, 221, 2000, pp. 240-245
Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition
Authors: Kwon, HK Eiting, CJ Lambert, DJH Shelton, BS Wong, MM Zhu, TG Dupuis, RD
Citation: Hk. Kwon et al., Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition, J CRYST GR, 221, 2000, pp. 362-367
The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganicchemical vapor deposition
Authors: Lambert, DJH Huang, JJ Shelton, BS Wong, MM Chowdhury, U Zhu, TG Kwon, HK Liliental-Weber, Z Benarama, M Feng, M Dupuis, RD
Citation: Djh. Lambert et al., The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganicchemical vapor deposition, J CRYST GR, 221, 2000, pp. 730-733
High-voltage GaN pin vertical rectifiers with 2 mu m thick i-layer
Authors: Zhu, TG Lambert, DJH Shelton, BS Wong, MM Chowdhury, U Kwon, HK Dupuis, RD
Citation: Tg. Zhu et al., High-voltage GaN pin vertical rectifiers with 2 mu m thick i-layer, ELECTR LETT, 36(23), 2000, pp. 1971-1972
Graded-emitter AlGaN/GaN heterojunction bipolar transistors
Authors: Huang, JJ Hattendorf, M Feng, M Lambert, DJH Shelton, BS Wong, MM Chowdhury, U Zhu, TG Kwon, HK Dupuis, RD
Citation: Jj. Huang et al., Graded-emitter AlGaN/GaN heterojunction bipolar transistors, ELECTR LETT, 36(14), 2000, pp. 1239-1240
AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition
Authors: Shelton, BS Huang, JJ Lambert, DJH Zhu, TG Wong, MM Eiting, CJ Kwon, HK Feng, M Dupuis, RD
Citation: Bs. Shelton et al., AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition, ELECTR LETT, 36(1), 2000, pp. 80-81
High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching
Authors: Zhu, TG Lambert, DJH Shelton, BS Wong, MM Chowdhury, U Dupuis, RD
Citation: Tg. Zhu et al., High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching, APPL PHYS L, 77(18), 2000, pp. 2918-2920
Back illuminated AlGaN solar-blind photodetectors
Authors: Lambert, DJH Wong, MM Chowdhury, U Collins, C Li, T Kwon, HK Shelton, BS Zhu, TG Campbell, JC Dupuis, RD
Citation: Djh. Lambert et al., Back illuminated AlGaN solar-blind photodetectors, APPL PHYS L, 77(12), 2000, pp. 1900-1902
Characterization of AlGaN/GaN heterostructures grown by metalorganic chemical vapor deposition
Authors: Eiting, CJ Lambert, DJH Kwon, HK Shelton, BS Wong, MM Zhu, TG Dupuis, RD
Citation: Cj. Eiting et al., Characterization of AlGaN/GaN heterostructures grown by metalorganic chemical vapor deposition, PHYS ST S-B, 216(1), 1999, pp. 193-197
Dependence of device characteristics on the intrinsic material properties of high-performance AlGaN/GaN HEMTs
Authors: Shelton, BS Wong, MM Zhu, TG Eiting, CJ Lambert, DJH Lin, DE Kwon, HK Dupuis, RD
Citation: Bs. Shelton et al., Dependence of device characteristics on the intrinsic material properties of high-performance AlGaN/GaN HEMTs, PHYS ST S-A, 176(1), 1999, pp. 213-217
Risultati: 1-16 |