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Results: 1-25 |
Results: 25
Quantum dot lasers of NIR range based on GaAs
Authors: Ustinov, VM Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Volovik, BV Musikhin, YG Tsatsul'nikov, AF Maximov, MV Shernyakov, YM Alferov, ZI Ledentsov, NN Bimberg, D Lott, J
Citation: Vm. Ustinov et al., Quantum dot lasers of NIR range based on GaAs, IAN FIZ, 65(2), 2001, pp. 214-218
1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
Authors: Ustinov, VM Zhukov, AE Maleev, NA Kovsh, AR Mikhrin, SS Volovik, BV Musikhin, YG Shernyakov, YM Maximov, MV Tsatsul'nikov, AF Ledentsov, NN Alferov, ZI Lott, JA Bimberg, D
Citation: Vm. Ustinov et al., 1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 1155-1161
Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
Authors: Maximov, MV Asryan, LV Shernyakov, YM Tsatsul'nikov, AF Kaiander, IN Nikolaev, VV Kovsh, AR Mikhrin, SS Ustinov, VM Zhukov, AE Alferov, ZI Ledenstov, NN Bimberg, D
Citation: Mv. Maximov et al., Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation, IEEE J Q EL, 37(5), 2001, pp. 676-683
Progress in quantum dot lasers: 1100 nm, 1300 nm, and high power applications
Authors: Grundmann, M Heinrichsdorff, F Ledentsov, NN Ribbat, C Bimberg, D Zhukov, AE Kovsh, AR Maximov, MV Shernyakov, YM Lifshits, DA Ustinov, VM Alferov, ZI
Citation: M. Grundmann et al., Progress in quantum dot lasers: 1100 nm, 1300 nm, and high power applications, JPN J A P 1, 39(4B), 2000, pp. 2341-2343
Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 mu m wavelength range
Authors: Maleev, NA Zhukov, AE Kovsh, AR Mikhrin, SS Ustinov, VM Bedarev, DA Volovik, BV Krestnikov, IL Kayander, IN Odnoblyudov, VA Suvorova, AA Tsatsul'nikov, AF Shernyakov, YM Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Na. Maleev et al., Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 mu m wavelength range, SEMICONDUCT, 34(5), 2000, pp. 594-597
Power conversion efficiency of quantum dot laser diodes
Authors: Zhukov, AE Kovsh, AR Mikhrin, SS Maleev, NA Odnoblyudov, VA Ustinov, VM Shernyakov, YM Kondrat'eva, EY Livshits, DA Tarasov, IS Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Ae. Zhukov et al., Power conversion efficiency of quantum dot laser diodes, SEMICONDUCT, 34(5), 2000, pp. 609-613
A spatially single-mode laser for a range of 1.25-1.28 mu m on the basis of InAs quantum dots on a GaAs substrate
Authors: Mikhrin, SS Zhukov, AE Kovsh, AR Maleev, NA Ustinov, VM Shernyakov, YM Kayander, IN Kondrat'eva, EY Livshits, DA Tarasov, IS Maksimov, MV Tsatsul'nikov, AF Ledentsov, NN Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Ss. Mikhrin et al., A spatially single-mode laser for a range of 1.25-1.28 mu m on the basis of InAs quantum dots on a GaAs substrate, SEMICONDUCT, 34(1), 2000, pp. 119-121
Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation
Authors: Maximov, MV Tsatsul'nikov, AF Sizov, DS Shernyakov, YM Zhukov, AE Kovsh, AR Mikhrin, SS Ustinov, VM Alferov, ZI Ledentsov, NN Bimberg, D Maka, T Torres, CMS
Citation: Mv. Maximov et al., Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation, NANOTECHNOL, 11(4), 2000, pp. 309-313
Long-wavelength quantum dot lasers on GaAs substrates
Authors: Ustinov, VM Zhukov, AE Kovsh, AR Mikhrin, SS Maleev, NA Volovik, BV Musikhin, YG Shernyakov, YM Kondat'eva, EY Maximov, MV Tsatsul'nikov, AF Ledentsov, NN Alferov, ZI Lott, JA Bimberg, D
Citation: Vm. Ustinov et al., Long-wavelength quantum dot lasers on GaAs substrates, NANOTECHNOL, 11(4), 2000, pp. 397-400
InGaAs-GaAs quantum dots for application in long wavelength (1.3 mu m) resonant vertical cavity enhanced devices
Authors: Maximov, MV Krestnikov, IL Shernyakov, YM Zhukov, AE Maleev, NA Musikhin, YG Ustinov, VM Alferov, ZI Chernyshov, AY Ledentsov, NN Bimberg, D Maka, T Torres, CMS
Citation: Mv. Maximov et al., InGaAs-GaAs quantum dots for application in long wavelength (1.3 mu m) resonant vertical cavity enhanced devices, J ELEC MAT, 29(5), 2000, pp. 487-493
0.94 mu m diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
Authors: Mikhrin, SS Zhukov, AE Kovsh, AR Maleev, NA Ustinov, VM Shernyakov, YM Soshnikov, IP Livshits, DA Tarasov, IS Bedarev, DA Volovik, BV Maximov, MV Tsatsul'nikov, AF Ledentsov, NN Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Ss. Mikhrin et al., 0.94 mu m diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots, SEMIC SCI T, 15(11), 2000, pp. 1061-1064
Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at similar to 1.3 mu m
Authors: Maximov, MV Tsatsul'nikov, AF Volovik, BV Bedarev, DA Shernyakov, YM Kaiander, IN Kondrat'eva, EY Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Ustinov, VM Musikhin, YG Kop'ev, PS Alferov, ZI Heitz, R Ledentsov, NN Bimberg, D
Citation: Mv. Maximov et al., Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at similar to 1.3 mu m, MICROEL ENG, 51-2, 2000, pp. 61-72
Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
Authors: Maximov, MV Tsatsul'nikov, AF Volovik, BV Sizov, DS Shernyakov, YM Kaiander, IN Zhukov, AE Kovsh, AR Mikhrin, SS Ustinov, VM Alferov, ZI Heitz, R Shchukin, VA Ledentsov, NN Bimberg, D Musikhin, YG Neumann, W
Citation: Mv. Maximov et al., Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors, PHYS REV B, 62(24), 2000, pp. 16671-16680
Quantum dot lasers: breakthrough in optoelectronics
Authors: Bimberg, D Grundmann, M Heinrichsdorff, F Ledentsov, NN Ustinov, VM Zhukov, AE Kovsh, AR Maximov, MV Shernyakov, YM Volovik, BV Tsatsul'nikov, AF Kop'ev, PS Alferov, ZI
Citation: D. Bimberg et al., Quantum dot lasers: breakthrough in optoelectronics, THIN SOL FI, 367(1-2), 2000, pp. 235-249
Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 mu m
Authors: Tsatsul'nikov, AF Kovsh, AR Zhukov, AE Shernyakov, YM Musikhin, YG Ustinov, VM Bert, NA Kop'ev, PS Alferov, ZI Mintairov, AM Merz, JL Ledentsov, NN Bimberg, D
Citation: Af. Tsatsul'Nikov et al., Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 mu m, J APPL PHYS, 88(11), 2000, pp. 6272-6275
Gain characteristics of quantum-dot injection lasers
Authors: Zhukov, AE Kovsh, AR Ustinov, VM Egorov, AY Ledentsov, NN Tsatsul'nikov, AF Maksimov, MV Zaitsev, SV Shernyakov, YM Lunev, AV Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Ae. Zhukov et al., Gain characteristics of quantum-dot injection lasers, SEMICONDUCT, 33(9), 1999, pp. 1013-1015
Lasing at a wavelength close to 1.3 mu m in InAs quantum-dot structures
Authors: Kovsh, AR Zhukov, AE Maleev, NA Mikhrin, SS Ustinov, VM Tsatsul'nikov, AF Maksimov, MV Volovik, BV Bedarev, DA Shernyakov, YM Kondrat'eva, EY Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Ar. Kovsh et al., Lasing at a wavelength close to 1.3 mu m in InAs quantum-dot structures, SEMICONDUCT, 33(8), 1999, pp. 929-932
Photo- and electroluminescence in the 1.3-mu m wavelength range from quantum-dot structures grown on GaAs substrates
Authors: Zhukov, AE Kovsh, AR Egorov, AY Maleev, NA Ustinov, VM Volovik, BV Maksimov, MV Tsatsul'nikov, AF Ledentsov, NN Shernyakov, YM Lunev, AV Musikhin, YG Bert, NA Kop'ev, PS Alferov, ZI
Citation: Ae. Zhukov et al., Photo- and electroluminescence in the 1.3-mu m wavelength range from quantum-dot structures grown on GaAs substrates, SEMICONDUCT, 33(2), 1999, pp. 153-156
Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate
Authors: Zhukov, AE Kovsh, AR Ustinov, VM Shernyakov, YM Mikhrin, SS Maleev, NA Kondrat'eva, EY Livshits, DA Maximov, MV Volovik, BV Bedarev, DA Musikhin, YG Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Ae. Zhukov et al., Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate, IEEE PHOTON, 11(11), 1999, pp. 1345-1347
Gain characteristics of quantum dot injection lasers
Authors: Zhukov, AE Kovsh, AR Ustinov, VM Egorov, AY Ledentsov, NN Tsatsul'nikov, AF Maximov, MV Shernyakov, YM Kopchatov, VI Lunev, AV Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Ae. Zhukov et al., Gain characteristics of quantum dot injection lasers, SEMIC SCI T, 14(1), 1999, pp. 118-123
Design prospects for mid-IR radiation sources using intraband inter-level charge carrier transitions in injection-type, quantum dot well laser heterostructures
Authors: Vorob'ev, LE Firsov, DA Shalygin, VA Tulupenko, VN Ledentsov, NN Kop'ev, PS Ustinov, VM Shernyakov, YM Alferov, ZI
Citation: Le. Vorob'Ev et al., Design prospects for mid-IR radiation sources using intraband inter-level charge carrier transitions in injection-type, quantum dot well laser heterostructures, USP FIZ NAU, 169(4), 1999, pp. 459-464
Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers
Authors: Kovsh, AR Zhukov, AE Egorov, AY Ustinov, VM Shernyakov, YM Maximov, MV Volovik, VV Tsatsul'nikov, AF Musikhin, YV Ledentsov, NN Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Ar. Kovsh et al., Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers, J CRYST GR, 202, 1999, pp. 1117-1120
Single transverse mode operation of long wavelength (similar to 1.3 mu m) InAsGaAs quantum dot laser
Authors: Maximov, MV Shernyakov, YM Kaiander, IN Bedarev, DA Kondrat'eva, EY Kop'ev, PS Kovsh, AR Maleev, NA Mikhrin, SS Tsatsul'nikov, AF Ustinov, VM Volovik, BV Zhukov, AE Alferov, ZJ Ledentsov, NN Bimberg, D
Citation: Mv. Maximov et al., Single transverse mode operation of long wavelength (similar to 1.3 mu m) InAsGaAs quantum dot laser, ELECTR LETT, 35(23), 1999, pp. 2038-2039
1.3 mu m GaAs-based laser using quantum dots obtained by activated spinodal decomposition
Authors: Shernyakov, YM Bedarev, DA Kondrat'eva, EY Kop'ev, PS Kovsh, AR Maleev, NA Maximov, MV Mikhrin, SS Tsatsul'nikov, AF Ustinov, VM Volovik, BV Zhukov, AE Alferov, ZI Ledentsov, NN Bimberg, D
Citation: Ym. Shernyakov et al., 1.3 mu m GaAs-based laser using quantum dots obtained by activated spinodal decomposition, ELECTR LETT, 35(11), 1999, pp. 898-900
Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates
Authors: Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Ustinov, VM Tsatsul'nikov, AF Maximov, MV Volovik, BV Bedarev, DA Shernyakov, YM Kop'ev, PS Alferov, ZI Ledentsov, NN Bimberg, D
Citation: Ae. Zhukov et al., Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates, APPL PHYS L, 75(13), 1999, pp. 1926-1928
Risultati: 1-25 |