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Results:
1-8
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Results: 8
Authors:
Stepanov, S
Wang, WN
Yavich, BS
Bougrov, V
Rebane, YT
Shreter, YG
Citation: S. Stepanov et al., Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers, MRS I J N S, 6(6), 2001, pp. 1-8
Authors:
Shreter, YG
Rebane, YT
Tarkhin, DV
Barakhtin, BK
Rybin, VV
Citation: Yg. Shreter et al., Kinetic mechanism of surface instability evolution during etching, corrosion, and growth of elastically stressed solids, PHYS SOL ST, 43(1), 2001, pp. 169-175
Authors:
Herrera-Zaldivar, M
Fernandez, P
Piqueras, J
Sukhoveyev, VV
Ivantsov, VA
Shreter, YG
Citation: M. Herrera-zaldivar et al., Origin of yellow luminescence from reduced pressure grown bulk GaN crystals, APPL PHYS A, 71(1), 2000, pp. 55-58
Authors:
Rebane, YT
Shreter, YG
Wang, WN
Citation: Yt. Rebane et al., Misfit dislocations and radiative efficiency of InxGa1-xN/GaN quantum wells, APPL SURF S, 166(1-4), 2000, pp. 300-303
Authors:
Rebane, YT
Shreter, YG
Yavich, BS
Bougrov, VE
Stepanov, SI
Wang, WN
Citation: Yt. Rebane et al., Light emitting diode with charge asymmetric resonance tunneling, PHYS ST S-A, 180(1), 2000, pp. 121-126
Authors:
Shreter, YG
Rebane, YT
Wang, WN
Citation: Yg. Shreter et al., III-nitride unipolar light emitting devices, PHYS ST S-A, 180(1), 2000, pp. 307-313
Authors:
Shreter, YG
Tarkhin, DV
Khorev, SA
Rebane, YT
Citation: Yg. Shreter et al., Instability of an elastically compressed silicon surface under etching, PHYS SOL ST, 41(8), 1999, pp. 1295-1297
Authors:
Worschech, L
Ossau, W
Waag, A
Landwehr, G
Hilpert, U
Schreiber, J
Rebane, YT
Shreter, YG
Citation: L. Worschech et al., Anisotropic polarization of dislocation-related luminescence in thin ZnSe films, PHYSICA B, 274, 1999, pp. 895-897
Risultati:
1-8
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