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Results: 1-21 |
Results: 21
The formation of developed morphology on the indium phosphide surface by ion argon beam sputtering
Authors: Soshnikov, IP Lunev, AV Gaevskii, ME Nesterov, SI Kulagina, MM Rotkina, LG Barchenko, VT Kalmykova, IP Efimov, AA Gorbenko, OM
Citation: Ip. Soshnikov et al., The formation of developed morphology on the indium phosphide surface by ion argon beam sputtering, TECH PHYS, 46(7), 2001, pp. 892-896
Composition analysis of coherent nanoinsertions of solid solutions on the basis of high-resolution electron micrographs
Authors: Soshnikov, IP Gorbenko, OM Golubok, AO Ledentsov, NN
Citation: Ip. Soshnikov et al., Composition analysis of coherent nanoinsertions of solid solutions on the basis of high-resolution electron micrographs, SEMICONDUCT, 35(3), 2001, pp. 347-352
Entropy-driven effects in self-organized formation of quantum dots
Authors: Shchukin, VA Ledentsov, NN Hoffmann, A Bimberg, D Soshnikov, IP Volovik, BV Ustinov, VM Litvinov, D Gerthsen, D
Citation: Va. Shchukin et al., Entropy-driven effects in self-organized formation of quantum dots, PHYS ST S-B, 224(2), 2001, pp. 503-508
Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces
Authors: Ledentsov, NN Litvinov, D Rosenauer, A Gerthsen, D Soshnikov, IP Shchukin, VA Ustinov, VM Egorov, AY Zukov, AE Volodin, VA Efremov, MD Preobrazhenskii, VV Semyagin, BP Bimberg, D Alferov, ZI
Citation: Nn. Ledentsov et al., Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces, J ELEC MAT, 30(5), 2001, pp. 463-470
Nanostructured InSiAs solid solution grown by molecular beam epitaxy on the Si(001) surface
Authors: Tsyrlin, GE Samsonenko, YB Petrov, VN Polyakov, NK Egorov, VA Masalov, SA Gorbenko, OM Golubok, AO Soshnikov, IP Ustinov, VM
Citation: Ge. Tsyrlin et al., Nanostructured InSiAs solid solution grown by molecular beam epitaxy on the Si(001) surface, TECH PHYS L, 26(9), 2000, pp. 781-784
Sputtering of A(3)B(5) materials (GaP, GaAs, GaSb, InP, and InSb) by 2-to 14-keV N-2(+) ions
Authors: Soshnikov, IP Bert, NA
Citation: Ip. Soshnikov et Na. Bert, Sputtering of A(3)B(5) materials (GaP, GaAs, GaSb, InP, and InSb) by 2-to 14-keV N-2(+) ions, TECH PHYS, 45(9), 2000, pp. 1201-1206
Sputtering characteristics of fullerene C-60 films under bombardment with 0.1-1-keV argon ions and atoms
Authors: Soshnikov, IP Lunev, AV Gaevskii, ME Rotkina, LG Barchenko, VT
Citation: Ip. Soshnikov et al., Sputtering characteristics of fullerene C-60 films under bombardment with 0.1-1-keV argon ions and atoms, TECH PHYS, 45(6), 2000, pp. 766-769
Specifics of MOCVD formation of InxGa1-xN inclusions in a GaN matrix
Authors: Soshnikov, IP Lundin, VV Usikov, AS Kalmykova, IP Ledentsov, NN Rosenauer, A Neubauer, B Gerthsen, D
Citation: Ip. Soshnikov et al., Specifics of MOCVD formation of InxGa1-xN inclusions in a GaN matrix, SEMICONDUCT, 34(6), 2000, pp. 621-625
Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots
Authors: Krestnikov, IL Sakharov, AV Lundin, WV Musikhin, YG Kartashova, AP Usikov, AS Tsatsul'nikov, AF Ledentsov, NN Alferov, ZI Soshnikov, IP Hahn, E Neubauer, B Rosenauer, A Litvinov, D Gerthsen, D Plaut, AC Hoffmann, AA Bimberg, D
Citation: Il. Krestnikov et al., Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots, SEMICONDUCT, 34(4), 2000, pp. 481-487
Sputtering of vanadium, molybdenum, and tantalum silicides by low energy Ar+ ions
Authors: Soshnikov, IP Murashov, S Shakhmin, AL Khodorkovsky, MA Bert, NA
Citation: Ip. Soshnikov et al., Sputtering of vanadium, molybdenum, and tantalum silicides by low energy Ar+ ions, IAN FIZ, 64(4), 2000, pp. 741-742
Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition
Authors: Tsatsul'nikov, AF Krestnikov, IL Lundin, WV Sakharov, AV Kartashova, AP Usikov, AS Alferov, ZI Ledentsov, NN Strittmatter, A Hoffmann, A Bimberg, D Soshnikov, IP Litvinov, D Rosenauer, A Gerthsen, D Plaut, A
Citation: Af. Tsatsul'Nikov et al., Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition, SEMIC SCI T, 15(7), 2000, pp. 766-769
0.94 mu m diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
Authors: Mikhrin, SS Zhukov, AE Kovsh, AR Maleev, NA Ustinov, VM Shernyakov, YM Soshnikov, IP Livshits, DA Tarasov, IS Bedarev, DA Volovik, BV Maximov, MV Tsatsul'nikov, AF Ledentsov, NN Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Ss. Mikhrin et al., 0.94 mu m diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots, SEMIC SCI T, 15(11), 2000, pp. 1061-1064
Lasing in vertical direction in structures with InGaN quantum dots
Authors: Krestnikov, IL Sakharov, AV Lundin, WV Usikov, AS Tsatsulnikov, AF Ledentsov, NN Alferov, ZI Soshnikov, IP Gerthsen, D Plaut, AC Holst, J Hoffmann, A Bimberg, D
Citation: Il. Krestnikov et al., Lasing in vertical direction in structures with InGaN quantum dots, PHYS ST S-A, 180(1), 2000, pp. 91-96
Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates
Authors: Ustinov, VM Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Tsatsul'nikov, AF Maximov, MV Volovik, BV Bedarev, DA Kop'ev, PS Alferov, ZI Vorob'ev, LE Firsov, DA Suvorova, AA Soshnikov, IP Werner, P Ledentsov, NN Bimberg, D
Citation: Vm. Ustinov et al., Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates, MICROELEC J, 31(1), 2000, pp. 1-7
Optical properties of structures with single and multiple InGaN insertionsin a GaN matrix
Authors: Sakharov, AV Lundin, WV Krestnikov, IL Semenov, VA Usikov, AS Tsatsulnikov, AF Musikhin, YG Baidakova, MV Alferov, ZI Ledentsov, NN Holst, J Hoffmann, A Bimberg, D Soshnikov, IP Gerthsen, D
Citation: Av. Sakharov et al., Optical properties of structures with single and multiple InGaN insertionsin a GaN matrix, PHYS ST S-B, 216(1), 1999, pp. 435-440
Lasing in structures with InAs quantum dots in an (Al,Ga)As matrix grown by submonolayer deposition
Authors: Tsatsul'nikov, AF Volovik, BV Ledentsov, NN Maximov, MV Egorov, AY Kovsh, AR Ustinov, VM Zhukov, AE Kop'ev, PS Alferov, ZI Kozin, IA Belousov, MV Soshnikov, IP Werner, P Litvinov, D Fischer, U Rosenauer, A Gerthsen, D
Citation: Af. Tsatsul'Nikov et al., Lasing in structures with InAs quantum dots in an (Al,Ga)As matrix grown by submonolayer deposition, J ELEC MAT, 28(5), 1999, pp. 537-541
Near-threshold sputtering of MoSi2
Authors: Soshnikov, IP Stepanova, MG Matin, EN Shakhmin, AL Khodorkovsky, MA Bert, NA
Citation: Ip. Soshnikov et al., Near-threshold sputtering of MoSi2, NUCL INST B, 155(3), 1999, pp. 272-279
1.75 mu m emission from self-organized InAs quantum dots on GaAs
Authors: Ustinov, VM Egorov, AY Zhukov, AE Kovsh, AR Ledentsov, NN Maximov, MV Volovik, BV Tsatsul'nikov, AF Kop'ev, PS Alferov, ZI Soshnikov, IP Zakharov, N Werner, P Bimberg, D
Citation: Vm. Ustinov et al., 1.75 mu m emission from self-organized InAs quantum dots on GaAs, J CRYST GR, 202, 1999, pp. 1143-1145
3.9W CW power from sub-monolayer quantum dot diode laser
Authors: Zhukov, AE Kovsh, AR Mikhrin, SS Maleev, NA Ustinov, VM Livshits, DA Tarasov, IS Bedarev, DA Maximov, MV Tsatsul'nikov, AF Soshnikov, IP Kop'ev, PS Alferov, ZI Ledentsov, NN Bimberg, D
Citation: Ae. Zhukov et al., 3.9W CW power from sub-monolayer quantum dot diode laser, ELECTR LETT, 35(21), 1999, pp. 1845-1847
Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 mu m
Authors: Maximov, MV Tsatsul'nikov, AF Volovik, BV Bedarev, DA Egorov, AY Zhukov, AE Kovsh, AR Bert, NA Ustinov, VM Kop'ev, PS Alferov, ZI Ledentsov, NN Bimberg, D Soshnikov, IP Werner, P
Citation: Mv. Maximov et al., Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 mu m, APPL PHYS L, 75(16), 1999, pp. 2347-2349
Optical properties of InAs quantum dots in a Si matrix
Authors: Heitz, R Ledentsov, NN Bimberg, D Egorov, AY Maximov, MV Ustinov, VM Zhukov, AE Alferov, ZI Cirlin, GE Soshnikov, IP Zakharov, ND Werner, P Gosele, U
Citation: R. Heitz et al., Optical properties of InAs quantum dots in a Si matrix, APPL PHYS L, 74(12), 1999, pp. 1701-1703
Risultati: 1-21 |