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Results: 25
Authors:
Derycke, V
Fonteneau, P
Pham, NP
Soukiassian, P
Citation: V. Derycke et al., Molecular-hydrogen interaction with beta-SiC(100)3X2 and c(4X2) surfaces and with Si atomic - art. no. 201305, PHYS REV B, 6320(20), 2001, pp. 1305
Authors:
Amy, F
Enriquez, H
Soukiassian, P
Storino, PF
Chabal, YJ
Mayne, AJ
Dujardin, G
Hwu, YK
Brylinski, C
Citation: F. Amy et al., Atomic scale oxidation of a complex system: O-2/alpha-SiC(0001)-(3x3), PHYS REV L, 86(19), 2001, pp. 4342-4345
Authors:
Amy, F
Enriquez, H
Soukiassian, P
Brylinski, C
Mayne, A
Dujardin, G
Citation: F. Amy et al., Si/6H-SiC(0001): An unexpected cubic 4x3 Si phase overlayer, APPL PHYS L, 79(6), 2001, pp. 767-769
Authors:
Soukiassian, P
Citation: P. Soukiassian, Nanostructures on silicon carbide surfaces, VIDE, 55(298), 2000, pp. 497
Authors:
Pavuna, D
Soukiassian, P
Citation: D. Pavuna et P. Soukiassian, Foreword, SURF REV L, 7(4), 2000, pp. III-III
Authors:
Douillard, L
Fauchoux, O
Aristov, V
Soukiassian, P
Citation: L. Douillard et al., Scanning tunneling microscopy evidence of background contamination-induced2 X 1 ordering of the beta-SiC(100) c(4 X 2) surface, APPL SURF S, 166(1-4), 2000, pp. 220-223
Authors:
Aristov, VY
Zhilin, VM
Grupp, C
Taleb-Ibrahimi, A
Kim, HJ
Mangat, PS
Soukiassian, P
Le Lay, G
Citation: Vy. Aristov et al., Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces, APPL SURF S, 166(1-4), 2000, pp. 263-267
Authors:
Derycke, V
Pham, NP
Fonteneau, P
Soukiassian, P
Aboulet-Nze, P
Monteil, Y
Mayne, AJ
Dujardin, G
Gautier, J
Citation: V. Derycke et al., Self-organized 1D nanostructures on the beta-SiC(100) surface: silicon atomic lines and dimer vacancy chains, APPL SURF S, 162, 2000, pp. 413-418
Authors:
Enriquez, H
Derycke, V
Aristov, VY
Soukiassian, P
Le Lay, G
di Cioccio, L
Cricenti, A
Croti, C
Ferrari, L
Perfetti, P
Citation: H. Enriquez et al., 1D electronic properties in temperature-induced c(4x2) to 2x1 transition on the beta-SiC(100) surface, APPL SURF S, 162, 2000, pp. 559-564
Authors:
Bernardini, J
Dallaporta, H
Le Lay, G
Soukiassian, P
Citation: J. Bernardini et al., ACSIN-5 - Proceedings of the Fifth International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures - Aix en Provence, France, July 6-9, 1999 - Preface, APPL SURF S, 162, 2000, pp. XIII-XIII
Authors:
Derycke, V
Fonteneau, P
Soukiassian, P
Citation: V. Derycke et al., Imaging beta-SiC(100) c(4x2) surface down dimers by empty electronic states scanning tunneling microscopy, PHYS REV B, 62(19), 2000, pp. 12660-12663
Authors:
Amy, F
Soukiassian, P
Hwu, YK
Brylinski, C
Citation: F. Amy et al., Identification of the 6H-SiC(0001) 3 x 3 surface reconstruction core-levelshifted components, SURF SCI, 464(1), 2000, pp. L691-L696
Authors:
Derycke, V
Soukiassian, P
Mayne, A
Dujardin, G
Citation: V. Derycke et al., Scanning tunneling microscopy investigation of the C-terminated beta-SiC(100) c(2 x 2) surface reconstruction: dimer orientation, defects and antiphase boundaries, SURF SCI, 446(1-2), 2000, pp. L101-L107
Authors:
Derycke, V
Soukiassian, P
Mayne, A
Dujardin, G
Gautier, J
Citation: V. Derycke et al., Comment on "carbon atomic chain formation on the beta-SiC(100) surface by controlled sp -> sp(3) transformation" - Derycke et al. Reply, PHYS REV L, 85(12), 2000, pp. 2650-2650
Authors:
Soukiassian, P
Citation: P. Soukiassian, Atomic control of Si-terminated cubic silicon carbide (100) surfaces: morphology and self-organized atomic lines, MAT SCI E B, 61-2, 1999, pp. 506-515
Authors:
Amy, F
Douillard, L
Aristov, VY
Soukiassian, P
Citation: F. Amy et al., Oxynitridation of cubic silicon carbide (100) surfaces, J VAC SCI A, 17(5), 1999, pp. 2629-2633
Authors:
Aristov, VY
Enriquez, H
Derycke, V
Soukiassian, P
Le Lay, G
Grupp, C
Taleb-Ibrahimi, A
Citation: Vy. Aristov et al., Core-level photoemission spectroscopy of the beta-SiC(100) c(4 x 2) surface, PHYS REV B, 60(24), 1999, pp. 16553-16557
Authors:
Aristov, VY
Le Lay, G
Zhilin, VM
Indlekofer, G
Grupp, C
Taleb-Ibrahimi, A
Soukiassian, P
Citation: Vy. Aristov et al., Direct measurement of quantum-state dispersion in an accumulation layer ata semiconductor surface, PHYS REV B, 60(11), 1999, pp. 7752-7755
Authors:
Aristov, VY
Douillard, L
Soukiassian, P
Citation: Vy. Aristov et al., High temperature dismantling of Si atomic lines on beta-SiC(100), SURF SCI, 440(1-2), 1999, pp. L825-L830
Authors:
Aroutiounian, VM
Buniatian, VV
Soukiassian, P
Citation: Vm. Aroutiounian et al., Microwave characteristics of BARITT diodes based on silicon carbide, SOL ST ELEC, 43(2), 1999, pp. 343-348
Authors:
Soukiassian, P
Aristov, V
Douillard, L
Semond, F
Mayne, A
Dujardin, G
Pizzagalli, L
Joachim, C
Delley, B
Wimmer, E
Citation: P. Soukiassian et al., Comment on "Missing-row asymmetric-dimer reconstruction of SiC(100)-c(4x2)", PHYS REV L, 82(18), 1999, pp. 3721-3721
Authors:
Aroutiounian, VM
Buniatyan, VV
Soukiassian, P
Citation: Vm. Aroutiounian et al., Microwave characteristics of BARITT diodes based on silicon carbide, IEEE DEVICE, 46(3), 1999, pp. 585-588
Authors:
Amy, F
Soukiassian, P
Hwu, YK
Brylinski, C
Citation: F. Amy et al., SiO2/6H-SiC(0001)3x3 initial interface formation by Si overlayer oxidation, APPL PHYS L, 75(21), 1999, pp. 3360-3362
Authors:
Aroutiounian, VM
Bouniatian, VV
Gevorgian, SS
Soukiassian, P
Citation: Vm. Aroutiounian et al., A new method of determination of parameters of traps in semiconductors, PHYS ST S-B, 210(2), 1998, pp. 805-808
Authors:
Derycke, V
Soukiassian, P
Mayne, A
Dujardin, G
Gautier, J
Citation: V. Derycke et al., Carbon atomic chain formation on the beta-SiC(100) surface by controlled sp -> sp(3) transformation, PHYS REV L, 81(26), 1998, pp. 5868-5871
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