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Results:
1-7
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Results: 7
Authors:
Sweet, M
Spulber, O
Bose, JVSC
Ngwendson, L
Vershinin, KV
De Souza, MM
Narayanan, EMS
Citation: M. Sweet et al., Clustered insulated gate bipolar transistor: a new power semiconductor device, IEE P-CIRC, 148(2), 2001, pp. 75-78
Authors:
Spulber, O
De Souza, MM
Sweet, M
Bose, JVSC
Narayanan, EMS
Citation: O. Spulber et al., Injection-enhancement effect in a novel, trench-planar insulated gate bipolar transistor, IEE P-CIRC, 148(2), 2001, pp. 79-82
Authors:
Luther-King, N
Sweet, M
Spulber, O
Vershinin, K
Ngw, CK
Bose, SC
De Souza, MM
Narayanan, EMS
Citation: N. Luther-king et al., The 6.5 kV clustered insulated gate bipolar transistor in homogeneous basetechnology, SOL ST ELEC, 45(1), 2001, pp. 71-77
Authors:
Ngw, CK
Sweet, M
Bose, JVSC
Spulber, O
King, NL
Vershinin, K
De Souza, MM
Narayanan, EMS
Citation: Ck. Ngw et al., Monolithic integration of low voltage devices in 3 kV planar MOS controlled power devices, SOL ST ELEC, 45(1), 2001, pp. 127-132
Authors:
Sweet, M
Ngw, CK
Spulber, O
Ngwendson, JVL
Vershinin, KV
Bose, SC
De Souza, MM
Narayanan, EMS
Citation: M. Sweet et al., Monolithic integration of a high-performance clustered insulated gate bipolar transistor with low-voltage components to form a 3 kV intelligent powerchip, MICROELEC J, 32(5-6), 2001, pp. 527-536
Authors:
Spulber, O
Sweet, M
Vershinin, K
Ngw, CK
Ngwendson, L
Bose, JVSC
De Souza, MM
Narayanan, EMS
Citation: O. Spulber et al., A novel trench clustered insulated gate bipolar transistor (TCIGBT), IEEE ELEC D, 21(12), 2000, pp. 613-615
Authors:
Spulber, O
Narayanan, EMS
Hardikar, S
De Souza, MM
Sweet, M
Bose, SC
Citation: O. Spulber et al., A novel gate geometry for the IGBT: The trench planar insulated gate bipolar transistor (TPIGBT), IEEE ELEC D, 20(11), 1999, pp. 580-582
Risultati:
1-7
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