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Results:
1-14
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Results: 14
Authors:
Tiedke, S
Schmitz, T
Prume, K
Roelofs, A
Schneller, T
Kall, U
Waser, R
Ganpule, CS
Nagarajan, V
Stanishevsky, A
Ramesh, R
Citation: S. Tiedke et al., Direct hysteresis measurements of single nanosized ferroelectric capacitors contacted with an atomic force microscope, APPL PHYS L, 79(22), 2001, pp. 3678-3680
Authors:
Yongsunthon, R
Stanishevsky, A
McCoy, J
Williams, ED
Citation: R. Yongsunthon et al., Observation of current crowding near fabricated voids in gold lines, APPL PHYS L, 78(18), 2001, pp. 2661-2663
Authors:
Aggarwal, S
Ganpule, C
Jenkins, IG
Nagaraj, B
Stanishevsky, A
Melngailis, J
Williams, E
Ramesh, R
Citation: S. Aggarwal et al., High density ferroelectric memories: Materials, processing and scaling, INTEGR FERR, 29(1-2), 2000, pp. 213-225
Authors:
Stanishevsky, A
Lappalainen, R
Citation: A. Stanishevsky et R. Lappalainen, Tribological properties of composite Ti(N,O,C) coatings containing hard amorphous carbon layers, SURF COAT, 123(2-3), 2000, pp. 101-105
Authors:
Steinhauer, DE
Vlahacos, CP
Wellstood, FC
Anlage, SM
Canedy, C
Ramesh, R
Stanishevsky, A
Melngailis, J
Citation: De. Steinhauer et al., Quantitative imaging of dielectric permittivity and tunability with a near-field scanning microwave microscope, REV SCI INS, 71(7), 2000, pp. 2751-2758
Authors:
Moffat, TP
Bonevich, JE
Huber, WH
Stanishevsky, A
Kelly, DR
Stafford, GR
Josell, D
Citation: Tp. Moffat et al., Superconformal electrodeposition of copper in 500-90 nm features, J ELCHEM SO, 147(12), 2000, pp. 4524-4535
Authors:
Stanishevsky, A
Citation: A. Stanishevsky, Quaziamorphous carbon and carbon nitride films deposited from the plasma of pulsed cathodic arc discharge, CHAOS SOL F, 10(12), 1999, pp. 2045-2066
Authors:
Stanishevsky, A
Citation: A. Stanishevsky, Focused ion beam patterning of diamondlike carbon films, DIAM RELAT, 8(7), 1999, pp. 1246-1250
Authors:
Iliadis, AA
Andronescu, SN
Yang, W
Vispute, RD
Stanishevsky, A
Orloff, JH
Sharma, RP
Venkatesan, T
Wood, MC
Jones, KA
Citation: Aa. Iliadis et al., Pt and W ohmic contacts to p-6H-SiC by focused ion beam direct-write deposition, J ELEC MAT, 28(3), 1999, pp. 136-140
Authors:
Stanishevsky, A
Khriachtchev, L
Citation: A. Stanishevsky et L. Khriachtchev, Modification of hydrogen-free amorphous carbon films by focused-ion-beam milling, J APPL PHYS, 86(12), 1999, pp. 7052-7058
Authors:
Ganpule, CS
Stanishevsky, A
Su, Q
Aggarwal, S
Melngailis, J
Williams, E
Ramesh, R
Citation: Cs. Ganpule et al., Scaling of ferroelectric properties in thin films, APPL PHYS L, 75(3), 1999, pp. 409-411
Authors:
Ganpule, CS
Stanishevsky, A
Aggarwal, S
Melngailis, J
Williams, E
Ramesh, R
Joshi, V
de Araujo, CP
Citation: Cs. Ganpule et al., Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films, APPL PHYS L, 75(24), 1999, pp. 3874-3876
Authors:
Steinhauer, DE
Vlahacos, CP
Wellstood, FC
Anlage, SM
Canedy, C
Ramesh, R
Stanishevsky, A
Melngailis, J
Citation: De. Steinhauer et al., Imaging of microwave permittivity, tunability, and damage recovery in (Ba,Sr)TiO3 thin films, APPL PHYS L, 75(20), 1999, pp. 3180-3182
Authors:
Stanishevsky, A
Aggarwal, S
Prakash, AS
Melngailis, J
Ramesh, R
Citation: A. Stanishevsky et al., Focused ion-beam patterning of nanoscale ferroelectric capacitors, J VAC SCI B, 16(6), 1998, pp. 3899-3902
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