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Results: 1-25/35
Authors:
Avramescu, A
Ueta, A
Uesugi, K
Suemune, I
Citation: A. Avramescu et al., Selective growth of highly packed array of ZnCdS quantum dots with a mask prepared by atomic force microscope nanolithography, JPN J A P 1, 40(3B), 2001, pp. 1899-1901
Authors:
Ok, YW
Choi, CJ
Seong, TY
Uesugi, K
Suemune, I
Citation: Yw. Ok et al., Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy, J ELEC MAT, 30(7), 2001, pp. 900-906
Authors:
Ashrafi, ABMA
Kumano, H
Suemune, I
Ok, YW
Seong, TY
Citation: Abma. Ashrafi et al., Single-crystalline rocksalt CdO layers grown on GaAs(001) substrates by metalorganic molecular-beam epitaxy, APPL PHYS L, 79(4), 2001, pp. 470-472
Authors:
Uesugi, K
Suemune, I
Citation: K. Uesugi et I. Suemune, Highly conductive GaAsNSe alloys grown on GaAs and their nonalloyed ohmic properties, APPL PHYS L, 79(20), 2001, pp. 3284-3286
Authors:
Yamada, S
Kato, J
Tanaka, S
Suemune, I
Avramescu, A
Aoyagi, Y
Teraguchi, N
Suzuki, A
Citation: S. Yamada et al., Nucleation and growth kinetics of AlN films on atomically smooth 6H-SiC (0001) surfaces, APPL PHYS L, 78(23), 2001, pp. 3612-3614
Authors:
Kumano, H
Nashiki, H
Suemune, I
Suzuki, H
Uesugi, K
He, AQ
Otsuka, N
Citation: H. Kumano et al., Intrinsic and extrinsic excitonic features in MgS/ZnSe superlattices revealed by microspectroscopy, JPN J A P 1, 39(2A), 2000, pp. 501-504
Authors:
Tawara, T
Tanaka, S
Kumano, H
Suemune, I
Citation: T. Tawara et al., Origin of size distributions in ZnSe self-organized quantum dots grown on ZnS layers, J ELEC MAT, 29(5), 2000, pp. 515-519
Authors:
Ueta, A
Shimozawa, T
Avramescu, A
Suemune, I
Machida, H
Shimoyama, N
Citation: A. Ueta et al., Growth mechanism of selectively grown II-VI semiconductor photonic dots for short-wavelength light emitters, J CRYST GR, 221, 2000, pp. 425-430
Authors:
Ashrafi, AA
Ueta, A
Kumano, H
Suemune, I
Citation: Aa. Ashrafi et al., Role of ZnS buffer layers in growth of zincblende ZnO on GaAs substrates by metalorganic molecular-beam epitaxy, J CRYST GR, 221, 2000, pp. 435-439
Authors:
Suemune, I
Morooka, N
Uesugi, K
Ok, YW
Seong, TY
Citation: I. Suemune et al., Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy, J CRYST GR, 221, 2000, pp. 546-550
Authors:
Tawara, T
Yoshida, H
Yogo, T
Tanaka, S
Suemune, I
Citation: T. Tawara et al., Microcavities with distributed Bragg reflectors based on ZnSe/MgS superlattice grown by MOVPE, J CRYST GR, 221, 2000, pp. 699-703
Authors:
Avramescu, A
Ueta, A
Uesugi, K
Suemune, I
Citation: A. Avramescu et al., New type of ZnCdS/ZnMgCdS heterostructures lattice-matched to GaAs for selective-area growth, J CRYST GR, 214, 2000, pp. 125-129
Authors:
Kumano, H
Ashrafi, AA
Ueta, A
Avramescu, A
Suemune, I
Citation: H. Kumano et al., Luminescence properties of ZnO films grown on GaAs substrates by molecular-beam epitaxy excited by electron-cyclotron resonance oxygen plasma, J CRYST GR, 214, 2000, pp. 280-283
Authors:
Hirose, J
Suemune, I
Ueta, A
Machida, H
Shimoyama, N
Citation: J. Hirose et al., Periodic doping of GaAs : Zn p-type nano-clusters in ZnSe grown by metalorganic molecular-beam epitaxy, J CRYST GR, 214, 2000, pp. 524-528
Authors:
Suemune, I
Ohsawa, H
Tawara, T
Machida, H
Shimoyama, N
Citation: I. Suemune et al., Study of site change of Li impurities in ZnSe by co-doping with iodine, J CRYST GR, 214, 2000, pp. 562-566
Authors:
Tawara, T
Suemune, I
Tanaka, S
Citation: T. Tawara et al., MOVPE growth of ZnSe/ZnMgS distributed Bragg reflectors with high refractive-index contrast, J CRYST GR, 214, 2000, pp. 1019-1023
Authors:
Ueta, A
Avramescu, A
Suemune, I
Machida, H
Shimoyama, N
Citation: A. Ueta et al., Enhancement of spontaneous emission by ZnS-based II-VI semiconductor photonic dots, J CRYST GR, 214, 2000, pp. 1024-1028
Authors:
Suemune, I
Ishibashi, A
Citation: I. Suemune et A. Ishibashi, II-VI Compounds 1999 - Proceedings of the Ninth International Conference on II-VI Compounds - Kyoto, Japan, 1-5 November 1999 - Editor's preface, J CRYST GR, 214, 2000, pp. XI-XI
Authors:
Shen, XQ
Ramvall, P
Riblet, P
Aoyagi, Y
Hosi, K
Tanaka, S
Suemune, I
Citation: Xq. Shen et al., Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy, J CRYST GR, 209(2-3), 2000, pp. 396-400
Authors:
Ueta, A
Avramescu, A
Suemune, I
Machida, H
Shimoyama, N
Citation: A. Ueta et al., Fabrication of selectively grown II-VI widegap semiconductor photonic dotson (001)GaAs with MOMBE, J CRYST GR, 209(2-3), 2000, pp. 518-521
Authors:
Avramescu, A
Ueta, A
Uesugi, K
Suemune, I
Citation: A. Avramescu et al., Atomic force microscope based patterning of carbonaceous masks for selective area growth on semiconductor surfaces, J APPL PHYS, 88(6), 2000, pp. 3158-3165
Authors:
Suemune, I
Uesugi, K
Walukiewicz, W
Citation: I. Suemune et al., Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs, APPL PHYS L, 77(19), 2000, pp. 3021-3023
Authors:
Ashrafi, ABMA
Ueta, A
Avramescu, A
Kumano, H
Suemune, I
Ok, YW
Seong, TY
Citation: Abma. Ashrafi et al., Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers, APPL PHYS L, 76(5), 2000, pp. 550-552
Authors:
Suemune, I
Hirose, J
Ueta, A
Citation: I. Suemune et al., Hole activation from GaAs : Zn nanoclusters for p-type conduction in ZnSe, APPL PHYS L, 76(13), 2000, pp. 1701-1703
Authors:
Uesugi, K
Suemune, I
Hasegawa, T
Akutagawa, T
Nakamura, T
Citation: K. Uesugi et al., Temperature dependence of band gap energies of GaAsN alloys, APPL PHYS L, 76(10), 2000, pp. 1285-1287