Citation: J. Szade et M. Neumann, Exchange splitting of photoemission lines in GdF3 and metallic Gd compounds, J PHYS-COND, 13(11), 2001, pp. 2717-2725
Authors:
Oszwaldowski, M
Berus, T
Szade, J
Jozwiak, K
Olejniczak, I
Konarski, P
Citation: M. Oszwaldowski et al., Structural properties of InSbBi and InSbAsBi thin films prepared by the flash-evaporation method, CRYST RES T, 36(8-10), 2001, pp. 1155-1171
Authors:
Slebarski, A
Orzechowska, M
Wrona, A
Szade, J
Jezierski, A
Citation: A. Slebarski et al., Structural properties and electronic structure of some ternary d-electron and f-electron intermetallics, J PHYS-COND, 12(7), 2000, pp. 1269-1284
Authors:
Guziewicz, M
Piotrowska, A
Kaminska, E
Golaszewska, K
Turos, A
Mizera, E
Winiarski, A
Szade, J
Citation: M. Guziewicz et al., Characteristics of sputter-deposited TiN, ZrB2 and W2B diffusion barriers for advanced metallizations to GaAs, SOL ST ELEC, 43(6), 1999, pp. 1055-1061